公开(公告)号：US20240284677A1

公开(公告)日：2024-08-22

申请号：US18443531

申请日：2024-02-16

Applicant: Kioxia Corporation

Inventor： Chihiro UMEDA ,  Yuta KAMIYA ,  Tomohisa IINO ,  Masaki NOGUCHI ,  Akira TAKASHIMA ,  Yusuke NAKAJIMA

IPC: H10B43/30 ,  H10B43/27

CPC classification number: H10B43/30 ,  H10B43/27

Abstract: A semiconductor device includes electrode layers and first insulating films alternately stacked on top of one another; a second insulating film extending along an upper surface, a lower surface, and a side surface of one of electrode layers; a charge storage layer extending along a side surface of the second insulating film with a third insulating film interposed therebetween; and a semiconductor layer extending along a side surface of the charge storage layer with a fourth insulating film interposed therebetween. A hydrogen concentration in the fourth insulating film is equal to or higher than a hydrogen concentration in the charge storage layer, which is equal to or higher than a hydrogen concentration in the third insulating film, which is equal to or higher than a hydrogen concentration in the second insulating film.

公开(公告)号：US20230413554A1

公开(公告)日：2023-12-21

申请号：US18177055

申请日：2023-03-01

Applicant: Kioxia Corporation

Inventor： Yusuke NAKAJIMA ,  Akira TAKASHIMA ,  Tsunehiro INO ,  Atsushi MURAKOSHI ,  Masaki NOGUCHI

IPC: H10B43/27 ,  H10B43/10

CPC classification number: H10B43/27 ,  H10B43/10

Abstract: According to one embodiment, a semiconductor device includes a stacked body of alternating conductor layers and insulator layers stacked in a first direction and a columnar body extending through the stacked body in the first direction. The columnar body includes a first insulating layer extending in the first direction and comprising aluminum and oxygen, a semiconductor layer between the first insulating layer and the conductor layers of the stacked body, a charge storage film between the semiconductor layer and the conductor layers, and a second insulating layer between the semiconductor layer and the first insulating layer and comprising silicon and oxygen. An interface between the semiconductor layer and the second insulating layer contains nitrogen to eliminate defects which may reduce channel mobility or the like.

公开(公告)号：US20230086074A1

公开(公告)日：2023-03-23

申请号：US17694098

申请日：2022-03-14

Applicant: Kioxia Corporation

Inventor： Yusuke NAKAJIMA ,  Akira TAKASHIMA ,  Tsunehiro INO ,  Yasushi NAKASAKI ,  Koji USUDA ,  Masaki NOGUCHI

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157

Abstract: A semiconductor device of an embodiment includes a semiconductor layer, a gate electrode layer, and a first insulating layer provided between the semiconductor layer and the gate electrode layer, the first insulating layer including aluminum oxide including at least one crystal phase selected from the group consisting of alpha (α)-aluminum oxide and theta (θ)-aluminum oxide, the first insulating layer having a thickness of equal to or less than 2.5 nm in a first direction from the semiconductor layer toward the gate electrode layer.

公开(公告)号：US20240258401A1

公开(公告)日：2024-08-01

申请号：US18420264

申请日：2024-01-23

Applicant: Kioxia Corporation

Inventor： Yusuke NAKAJIMA ,  Akira TAKASHIMA ,  Tsunehiro INO ,  Yasushi NAKASAKI

IPC: H01L29/51 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

CPC classification number: H01L29/513 ,  H01L29/517 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

Abstract: A semiconductor device of embodiments includes: a semiconductor layer; a gate electrode layer including a first conductive layer containing a first material and a second conductive layer between the first conductive layer and the semiconductor layer and containing a second material different from the first material; and a first insulating layer between the semiconductor layer and the gate electrode layer and containing aluminum oxide, the aluminum oxide including α (alpha)-aluminum oxide or θ (theta)-aluminum oxide. The direction of the crystal axis of the aluminum oxide falls within a range of ±10° with respect to a first direction from the semiconductor layer toward the gate electrode layer. The direction of the crystal axis of the first material falls within a range of ±10° with respect to the first direction. The direction of the crystal axis of the second material falls within a range of ±10° with respect to the first direction.

公开(公告)号：US20230301089A1

公开(公告)日：2023-09-21

申请号：US17819039

申请日：2022-08-11

Applicant: Kioxia Corporation

Inventor： Tsunehiro INO ,  Yusuke NAKAJIMA ,  Akira TAKASHIMA

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11524 ,  H01L27/1157

CPC classification number: H01L27/11582 ,  H01L27/11556 ,  H01L27/11524 ,  H01L27/1157

Abstract: A method for manufacturing an oxide film according to an embodiment includes forming a first film containing aluminum (Al) and nitrogen (N), and forming a second film containing aluminum (Al) and oxygen (O) by oxidizing the first film in an atmosphere containing heavy water (D2O).