公开(公告)号：US20210088906A1

公开(公告)日：2021-03-25

申请号：US16817804

申请日：2020-03-13

Applicant: Kioxia Corporation

Inventor： Takeharu MOTOKAWA ,  Noriko SAKURAI ,  Ryu KOMATSU ,  Hideaki SAKURAI

IPC: G03F7/09 ,  G03F7/00 ,  G03F9/00

Abstract: According to one embodiment, a pattern forming method includes forming a resist film including a first core material pattern and a second core material pattern, on a first film laminated on a substrate; forming a second film at least on sidewalls of the first and second core material patterns; removing the first core material pattern while not removing the second core material pattern and the second film; and processing the first film by using, as a mask, the second core material pattern and the second film.

公开(公告)号：US20210080831A1

公开(公告)日：2021-03-18

申请号：US16804981

申请日：2020-02-28

Applicant: KIOXIA CORPORATION

Inventor： Ryu KOMATSU ,  Takeharu MOTOKAWA ,  Noriko SAKURAI ,  Hideaki SAKURAI

IPC: G03F7/20 ,  H01L21/027 ,  G03F7/16 ,  G03F7/38

Abstract: A method for processing a substrate includes forming a pattern on a substrate, supplying water to cover the pattern, and after the supplying the water, irradiating the pattern with light having a wavelength longer that which causes dissociation of water. A substrate processing apparatus of an embodiment includes a transfer chamber to receive a patterned substrate, a water supplying chamber to cover the pattern with water, and an irradiating chamber to irradiate a portion of the pattern with near-field light.