TEMPLATE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20250013146A1

    公开(公告)日:2025-01-09

    申请号:US18890006

    申请日:2024-09-19

    Abstract: A template according to an embodiment includes a substrate and a first layer. The substrate includes a first face having a pattern, and contains a first element. The first layer is in contact with the first face, and contains a compound having the first element and a second element different from the first element, the density of the compound in the first layer being higher than the density of the compound in the substrate.

    PROCESSING APPARATUS AND PROCESSING METHOD

    公开(公告)号:US20210238739A1

    公开(公告)日:2021-08-05

    申请号:US17009388

    申请日:2020-09-01

    Abstract: According to one embodiment, a processing apparatus includes a chamber, a first gas introduction port that introduces a first gas into the chamber, a first gas discharge port that discharges the first gas from the chamber, and a stage that supports a processing object in the chamber. The processing apparatus has a plasma generating section with an electrode to generate a plasma in the chamber. The processing apparatus includes a shield at a first position that is between the plasma generating section and the stage. The shield is light transmissive, but blocks radicals and ions generated with plasma. In some examples, the shield may be moveable from the first position to another position that is not between the plasma generating section and the stage.

    TEMPLATE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20220291581A1

    公开(公告)日:2022-09-15

    申请号:US17447044

    申请日:2021-09-07

    Abstract: A template according to an embodiment includes a substrate and a first layer. The substrate includes a first face having a pattern, and contains a first element. The first layer is in contact with the first face, and contains a compound having the first element and a second element different from the first element, the density of the compound in the first layer being higher than the density of the compound in the substrate.

    PATTERN FORMATION METHOD AND TEMPLATE MANUFACTURING METHOD

    公开(公告)号:US20220206382A1

    公开(公告)日:2022-06-30

    申请号:US17463435

    申请日:2021-08-31

    Abstract: According to one embodiment, a pattern formation method includes patterning a first film on a substate to have a plurality of lines extending in a first direction and a second pattern portion extending in a second direction intersecting the first direction. Each line having at least a first width and being spaced from an adjacent line in the second direction by a least three times the first width and spaced from ends of the lines in the first direction by twice or less the first width. A conformal film is then formed on the patterned first film. The conformal film having a thickness equal to the first width. The patterned first film is then removed while leaving portions of the conformal film that were previously on sidewalls of the plurality of lines behind.

    METHOD OF MANUFACTURING TEMPLATE AND METHOD OF FORMING PATTERN

    公开(公告)号:US20210291408A1

    公开(公告)日:2021-09-23

    申请号:US17115955

    申请日:2020-12-09

    Abstract: A method of manufacturing a template, has: preparing a substrate containing quartz and having a surface, the surface including a protrusion and a depression; and processing the depression. The processing of the depression includes: a first step of forming a film on the surface, the film including a first region and a second region, the first region being provided on the protrusion, and the second region being provided on a bottom of the depression and being thinner than the first region; a second step of removing the second region with the first region partly remaining to expose the bottom of the depression; and a third step of processing the exposed part of the depression using a mask made of the remainder of the first region.

    PATTERN FORMING METHOD AND TEMPLATE MANUFACTURING METHOD

    公开(公告)号:US20210088906A1

    公开(公告)日:2021-03-25

    申请号:US16817804

    申请日:2020-03-13

    Abstract: According to one embodiment, a pattern forming method includes forming a resist film including a first core material pattern and a second core material pattern, on a first film laminated on a substrate; forming a second film at least on sidewalls of the first and second core material patterns; removing the first core material pattern while not removing the second core material pattern and the second film; and processing the first film by using, as a mask, the second core material pattern and the second film.

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