公开(公告)号：US07706202B2

公开(公告)日：2010-04-27

申请号：US11802627

申请日：2007-05-24

申请人： Shigeki Obayashi ,  Toshiaki Yonezu ,  Takeshi Iwamoto ,  Kazushi Kono ,  Masashi Arakawa ,  Takahiro Uchida

发明人： Shigeki Obayashi ,  Toshiaki Yonezu ,  Takeshi Iwamoto ,  Kazushi Kono ,  Masashi Arakawa ,  Takahiro Uchida

IPC分类号： G11C17/18

CPC分类号： G11C17/18 ,  G11C17/165 ,  G11C29/027 ,  G11C29/028 ,  G11C29/785 ,  H01L23/5256 ,  H01L27/101 ,  H01L2924/0002 ,  H01L2924/00

摘要： In fuse program circuits, fuse element FS is implemented using metal interconnect at third or higher layer of multilayer metal interconnect. In each fuse program circuit, program information and fuse select information are sequentially transferred using a scan flip-flops, and fuses are selectively and electrically blown one by one. The fuse program circuit provided with fuse elements that can be programmed even after packaging is implemented with low power consumption and a low occupation area.

摘要翻译： 在熔丝编程电路中，使用第三层或更高层多层金属互连的金属互连实施熔丝元件FS。 在每个熔丝编程电路中，使用扫描触发器顺序传送程序信息和熔丝选择信息，并且一个接一个地选择性地电熔熔断器。 设置有即使在封装之后也可以被编程的熔丝元件的保险丝编程电路以低功耗和低占用面积实现。

公开(公告)号：US20070280012A1

公开(公告)日：2007-12-06

申请号：US11802627

申请日：2007-05-24

申请人： Shigeki Obayashi ,  Toshiaki Yonezu ,  Takeshi Iwamoto ,  Kazushi Kono ,  Masashi Arakawa ,  Takahiro Uchida

发明人： Shigeki Obayashi ,  Toshiaki Yonezu ,  Takeshi Iwamoto ,  Kazushi Kono ,  Masashi Arakawa ,  Takahiro Uchida

IPC分类号： G11C29/00 ,  G11C7/00

CPC分类号： G11C17/18 ,  G11C17/165 ,  G11C29/027 ,  G11C29/028 ,  G11C29/785 ,  H01L23/5256 ,  H01L27/101 ,  H01L2924/0002 ,  H01L2924/00

摘要： In fuse program circuits, fuse element FS is implemented using metal interconnect at third or higher layer of multilayer metal interconnect. In each fuse program circuit, program information and fuse select information are sequentially transferred using a scan flip-flops, and fuses are selectively and electrically blown one by one. The fuse program circuit provided with fuse elements that can be programmed even after packaging is implemented with low power consumption and a low occupation area.

摘要翻译： 在熔丝编程电路中，使用第三层或更高层多层金属互连的金属互连实施熔丝元件FS。 在每个熔丝编程电路中，使用扫描触发器顺序传送程序信息和熔丝选择信息，并且一个接一个地选择性地电熔熔断器。 设置有即使在封装之后也可以被编程的熔丝元件的保险丝编程电路以低功耗和低占用面积实现。

公开(公告)号：US20070210414A1

公开(公告)日：2007-09-13

申请号：US11683053

申请日：2007-03-07

申请人： Takeshi Iwamoto ,  Kazushi Kono ,  Masashi Arakawa ,  Toshiaki Yonezu ,  Shigeki Obayashi

发明人： Takeshi Iwamoto ,  Kazushi Kono ,  Masashi Arakawa ,  Toshiaki Yonezu ,  Shigeki Obayashi

IPC分类号： H01L29/00 ,  H01L21/82

CPC分类号： H01L23/5256 ,  H01H85/041 ,  H01L23/5227 ,  H01L23/525 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a semiconductor device having an electric fuse structure which receives the supply of an electric current to be permitted to be cut without damaging portions around the fuse. An electric fuse is electrically connected between an electronic circuit and a redundant circuit as a spare of the electronic circuit. After these circuits are sealed with a resin, the fuse can be cut by receiving the supply of an electric current from the outside. The electric fuse is formed in a fine layer, and is made of a main wiring and a barrier film. The linear expansion coefficient of each of the main wiring and the barrier film is larger than that of each of the insulator layers. The melting point of each of the main wiring and the barrier film is lower than that of each of the insulator layers.

摘要翻译： 提供一种具有电熔丝结构的半导体器件，其接收要被允许切割的电流的供应，而不损坏保险丝周围的部分。 电子熔断器电连接在电子电路和冗余电路之间，作为电子电路的备用电路。 在这些电路用树脂密封之后，可以通过从外部接收电流来切断保险丝。 电熔丝形成为细层，由主配线和阻挡膜构成。 主布线和阻挡膜中的每一个的线膨胀系数大于每个绝缘体层的线膨胀系数。 主配线和阻挡膜中的每一个的熔点低于每个绝缘体层的熔点。

公开(公告)号：US20100165775A1

公开(公告)日：2010-07-01

申请号：US12723218

申请日：2010-03-12

申请人： Shigeki OBAYASHI ,  Toshiaki Yonezu ,  Tokeshi Iwamoto ,  Kazushi Kono ,  Masashi Arakawa ,  Takahiro Uchida

发明人： Shigeki OBAYASHI ,  Toshiaki Yonezu ,  Tokeshi Iwamoto ,  Kazushi Kono ,  Masashi Arakawa ,  Takahiro Uchida

IPC分类号： G11C17/18 ,  H01L23/525

CPC分类号： G11C17/18 ,  G11C17/165 ,  G11C29/027 ,  G11C29/028 ,  G11C29/785 ,  H01L23/5256 ,  H01L27/101 ,  H01L2924/0002 ,  H01L2924/00

摘要： In fuse program circuits, fuse element FS is implemented using metal interconnect at third or higher layer of multilayer metal interconnect. In each fuse program circuit, program information and fuse select information are sequentially transferred using a scan flip-flops, and fuses are selectively and electrically blown one by one. The fuse program circuit provided with fuse elements that can be programmed even after packaging is implemented with low power consumption and a low occupation area.

摘要翻译： 在熔丝编程电路中，使用第三层或更高层多层金属互连的金属互连实施熔丝元件FS。 在每个熔丝编程电路中，使用扫描触发器顺序传送程序信息和熔丝选择信息，并且一个接一个地选择性地电熔熔断器。 设置有即使在封装之后也可以被编程的熔丝元件的保险丝编程电路以低功耗和低占用面积实现。

公开(公告)号：US07705418B2

公开(公告)日：2010-04-27

申请号：US11425573

申请日：2006-06-21

申请人： Kazushi Kono ,  Takeshi Iwamoto ,  Toshiaki Yonezu

发明人： Kazushi Kono ,  Takeshi Iwamoto ,  Toshiaki Yonezu

IPC分类号： H01L21/82

CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： A fuse includes a fuse portion laid in such a manner that the direction of each turn of the fuse portion is parallel to the direction in which pads are arranged. The distance between the pads and the fuse portion is defined as the distance between the side of a pad facing the fuse portion and the pad nearest to the turn facing the particular side. The distance between the turn of the fuse portion and the nearest pad is the distance between the pads and the fuse portion. The pads and the fuse portion are distant from each other by a length at least ten times the width of the fuse.

摘要翻译： 保险丝包括保险丝部分，其以使得熔丝部分的每个转向的方向平行于焊盘布置方向的方式布置。 焊盘和熔断部分之间的距离被定义为面对熔丝部分的焊盘的侧面与最靠近转向面的面对特定侧面的距离。 保险丝部分和最近的焊盘之间的距离是焊盘和熔断器部分之间的距离。 焊盘和熔丝部分彼此之间距离保险丝宽度的至少十倍。

公开(公告)号：US20060289898A1

公开(公告)日：2006-12-28

申请号：US11425573

申请日：2006-06-21

申请人： Kazushi Kono ,  Takeshi Iwamoto ,  Toshiaki Yonezu

发明人： Kazushi Kono ,  Takeshi Iwamoto ,  Toshiaki Yonezu

IPC分类号： H01L27/10

CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： A fuse includes a fuse portion laid in such a manner that the direction of each turn of the fuse portion is parallel to the direction in which pads are arranged. The distance between the pads and the fuse portion is defined as the distance between the side of a pad facing the fuse portion and the pad nearest to the turn facing the particular side. The distance between the turn of the fuse portion and the nearest pad is the distance between the pads and the fuse portion. The pads and the fuse portion are distant from each other by a length at least ten times the width of the fuse.

摘要翻译： 保险丝包括保险丝部分，其以使得熔丝部分的每个转向的方向平行于焊盘布置方向的方式布置。 焊盘和熔断部分之间的距离被定义为面对熔丝部分的焊盘的侧面与最靠近转向面的面对特定侧面的距离。 保险丝部分和最近的焊盘之间的距离是焊盘和熔断器部分之间的距离。 焊盘和熔丝部分彼此之间距离保险丝宽度的至少十倍。

公开(公告)号：US20070164394A1

公开(公告)日：2007-07-19

申请号：US11511442

申请日：2006-08-29

申请人： Yasuhiro Ido ,  Kazushi Kono ,  Takeshi Iwamoto

发明人： Yasuhiro Ido ,  Kazushi Kono ,  Takeshi Iwamoto

IPC分类号： H01L29/00

CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

摘要： On a semiconductor substrate a silicon oxide film is formed and provided with a recess. In the recess a reflector layer of copper is disposed as a blocking layer with a barrier metal posed therebetween. The reflector layer of copper is covered with a silicon oxide film and thereon a fuse region provided with a plurality of fuses is provided. The reflector layer of copper has a plane of reflection recessed downward to reflect a laser beam. The reflector layer of copper is arranged to overlap substantially the entirety of the fuse region, as seen in a plane. A laser beam radiated to blow the fuse can have a reduced effect on a vicinity of the fuse region. A semiconductor device reduced in size can be obtained.

摘要翻译： 在半导体衬底上形成氧化硅膜并设置有凹部。 在凹部中，铜的反射器层被设置为阻挡层，其间具有阻挡金属。 铜的反射层被氧化硅膜覆盖，并且在其上提供设有多个保险丝的保险丝区域。 铜的反射层具有向下凹入的反射平面以反射激光束。 铜的反射器层布置成基本上与整个熔断器区域重叠，如在平面中所见。 照射熔断器的激光束可以对保险丝区域的附近产生减小的影响。 可以获得尺寸减小的半导体装置。

公开(公告)号：US07034406B2

公开(公告)日：2006-04-25

申请号：US10870976

申请日：2004-06-21

申请人： Yasuhiro Ido ,  Takeshi Iwamoto ,  Kazushi Kono

发明人： Yasuhiro Ido ,  Takeshi Iwamoto ,  Kazushi Kono

IPC分类号： H01L23/544

CPC分类号： H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes an alignment mark arranged on a surface, and including a high reflectance portion and a flat low reflectance portion; and a first silicon oxide film formed internally and provided with a plurality of first embedded portions filled with a material different from a material of portions around the embedded portions. The first embedded portions are formed in at least a portion of a region avoiding a portion shaded by projecting the high reflectance portion onto the silicon oxide film.

摘要翻译： 半导体器件包括布置在表面上的对准标记，并且包括高反射率部分和平坦的低反射率部分; 以及第一氧化硅膜，其内部形成有多个第一嵌入部分，该第一嵌入部分填充有与嵌入部分周围的部分材料不同的材料。 第一嵌入部分形成在区域的至少一部分中，避免通过将高反射率部分投影到氧化硅膜上而被遮蔽的部分。

公开(公告)号：US06822310B2

公开(公告)日：2004-11-23

申请号：US10424129

申请日：2003-04-28

申请人： Kazushi Kono ,  Takeshi Iwamoto

发明人： Kazushi Kono ,  Takeshi Iwamoto

IPC分类号： H01L2900

CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor integrated circuit according to the invention includes a wiring member formed on a main face of a semiconductor substrate, a fusing member connected to the wiring member and having a predetermined thickness, a barrier member for covering a bottom face and a side face of the fusing member, a light absorbing member for covering at least a side face portion of the barrier member for covering the fusing member, and an insulating member for embedding the wiring member, the fusing member, the barrier member and the light absorbing member. A complex permittivity of the light absorbing member is provided with a real part smaller than that of the fusing member in absolute value and an imaginary part larger than that of the fusing member.

摘要翻译： 根据本发明的半导体集成电路包括形成在半导体衬底的主面上的布线构件，与布线构件连接并具有预定厚度的定影构件，用于覆盖底面的屏障构件和 定影构件，用于覆盖用于覆盖定影构件的阻挡构件的至少侧面部的光吸收构件，以及用于嵌入布线构件，定影构件，阻挡构件和光吸收构件的绝缘构件。 光吸收部件的复数介电常数的绝对值小于定影部件的实际部分，虚部比熔接部件大。

公开(公告)号：US07115966B2

公开(公告)日：2006-10-03

申请号：US10375125

申请日：2003-02-28

申请人： Yasuhiro Ido ,  Kazushi Kono ,  Takeshi Iwamoto

发明人： Yasuhiro Ido ,  Kazushi Kono ,  Takeshi Iwamoto

IPC分类号： H01L29/00 ,  H01L29/73

CPC分类号： H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

摘要： On a semiconductor substrate a silicon oxide film is formed and provided with a recess. In the recess a reflector layer of copper is disposed as a blocking layer with a barrier metal posed therebetween. The reflector layer of copper is covered with a silicon oxide film and thereon a fuse region provided with a plurality of fuses is provided. The reflector layer of copper has a plane of reflection recessed downward to reflect a laser beam. The reflector layer of copper is arranged to overlap substantially the entirety of the fuse region, as seen in a plane. A laser beam radiated to blow the fuse can have a reduced effect on a vicinity of the fuse region. A semiconductor device reduced in size can be obtained.

摘要翻译： 在半导体衬底上形成氧化硅膜并设置有凹部。 在凹部中，铜的反射器层被设置为阻挡层，其间具有阻挡金属。 铜的反射层被氧化硅膜覆盖，并且在其上提供设有多个保险丝的保险丝区域。 铜的反射层具有向下凹入的反射平面以反射激光束。 铜的反射器层布置成基本上与整个熔断器区域重叠，如在平面中所见。 照射熔断器的激光束可以对保险丝区域的附近产生减小的影响。 可以获得尺寸减小的半导体装置。