公开(公告)号：US06635901B2

公开(公告)日：2003-10-21

申请号：US10021677

申请日：2001-12-12

申请人： Nobuhiko Sawaki ,  Yoshio Honda ,  Norikatsu Koide ,  Katsuki Furukawa

发明人： Nobuhiko Sawaki ,  Yoshio Honda ,  Norikatsu Koide ,  Katsuki Furukawa

IPC分类号： H01L310336

CPC分类号： H01L33/20 ,  H01L27/153 ,  H01L33/16

摘要： A semiconductor device includes a silicon substrate and a compound semiconductor layer formed on a main plane of the silicon substrate. The compound semiconductor layer is represented by the general formula of InxGayAlzN (where x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1). The silicon substrate includes a trench having as a slope a plane inclined 62 degrees from the main plane of the silicon substrate, or a plane inclined in a range within 3 degrees in an arbitrary direction from the inclined plane. The compound semiconductor layer is formed on the slope. The semiconductor device includes compound semiconductor layers represented by AlxGayInzN (where x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1) on a silicon substrate. The silicon substrate has a main plane constituted by a plane in a range of ±5 degrees in an arbitrary direction from a (112) plane. The compound semiconductor layers are formed on the main plane.

摘要翻译： 半导体器件包括硅衬底和形成在硅衬底的主平面上的化合物半导体层。 化合物半导体层由通式InxGayAlzN（其中x + y + z =1,0,0≤x≤1,0<= y <= 1,0