摘要:
In a solid-state image-sensing device of the invention, for acquisition of sensed-image data, a photoelectric converter disconnecting switch is turned on to make a forcible reset switch perform resetting, then the voltage at the end of a logarithmic conversion MOS transistor that is not connected to the photoelectric converter disconnecting switch is so controlled that the logarithmic conversion MOS transistor is reset according to the threshold voltage thereof, and then an output commensurate with the amount of light incident on the photoelectric converter is delivered; for acquisition of noise data, the photoelectric converter disconnecting switch is turned on to make the forcible reset switch perform resetting, then the photoelectric converter disconnecting switch is turned off, then the voltage at the end of the logarithmic conversion MOS transistor that is not connected to the photoelectric converter disconnecting switch is so controlled that the logarithmic conversion MOS transistor is reset according to the threshold voltage thereof, and then an output unrelated to the amount of light incident on the photoelectric converter is delivered. With this sequence of operations, variations in sensitivity among individual pixels can be corrected for without irradiation with uniform light.
摘要:
By feeding an appropriate voltage as a signal φTX to a transfer gate TG, a MOS transistor T1 , is operated in a threshold region. A potential linearly or natural logarithmically converted by a buried photodiode PD is transferred to an N-type floating diffusion layer FD so as to be fed out, as an image signal, via MOS transistors T3 and T4.
摘要:
A level shifter (181) shifts a signal level of a noise signal produced from a pixel so that the signal level becomes close to a reference level, and then a level shifter (182) complements the noise signal whose level was shifted by the level shifter (181) by a signal level corresponding to the level shifted by the level shifter (181). After that, the differential amplifier (183) performs subtraction operation between the noise signal that has passed the level shifters (181, 182) and the image signal from the pixel, so as to output the image signal without noises.
摘要:
In a solid-state image-sensing device, by global shuttering, whereby image sensing is performed simultaneously in all the pixels, a potential commensurate with the amount of light incident on a buried diode PD is held in an N-type floating diffusion region FD. Then a noise signal is outputted, and then the potential held in the N-type floating diffusion region FD is transferred to an N-type floating diffusion region FD1 so that an image signal is outputted.
摘要:
By feeding an appropriate voltage as a signal φTX to a transfer gate TG, a MOS transistor T1 , is operated in a threshold region. A potential linearly or natural logarithmically converted by a buried photodiode PD is transferred to an N-type floating diffusion layer FD so as to be fed out, as an image signal, via MOS transistors T3 and T4.
摘要:
By feeding an appropriate voltage as a signal φTX to a transfer gate TG, a MOS transistor T1 is operated in a threshold region. A potential linearly or natural logarithmically converted by a buried photodiode PD is transferred to an N-type floating diffusion layer FD so as to be fed out, as an image signal, via MOS transistors T3 and T4.
摘要:
By feeding an appropriate voltage as a signal φTX to a transfer gate TG, a MOS transistor T1 is operated in a threshold region. A potential linearly or natural logarithmically converted by a buried photodiode PD is transferred to an N-type floating diffusion layer FD so as to be fed out, as an image signal, via MOS transistors T3 and T4.
摘要:
A solid-state imaging device includes: a pixel unit in which pixels, each of which converts light into a pixel signal and accumulates the pixel signal in accordance with a light exposure period, are arranged in a predetermined color layout and first-color pixel horizontal rows containing first-color pixels and second-color pixel horizontal rows containing second-color pixels are alternately arranged in a vertical row direction; readout units that select n (n≧2) single-color pixel signals from the first-color or second-color pixels in the first-color or second-color pixel horizontal rows, perform 1/n thinning-out on the selected n pixel signals to reduce the number of pixel signals to 1/n, and read the resultant pixel signal for each of the colors; and column processing units that perform column processing on the pixel signals having undergone the 1/n thinning-out.
摘要:
Switches SHS and RSM are turned on to hold an image signal at a negative electrode of a capacitor Cs, then a switch SHN is turned on to hold a noise signal at a positive electrode of a capacitor Cn. Then a switch RSP is turned on and then a switch MIX is turned on to combine together the image and noise signals thus held and thereby produce, as a voltage signal, a noise-free image signal at the node between the capacitor Cs and the switch MIX. Then a switch Sx is turned on to output the noise-free image signal.
摘要:
An image pickup apparatus comprising: a plurality of pixels each with a photodiode, a logarithmic converter including a logarithmic-converting MOS transistor for converting an output of the photodiode into an electric signal proportional to a logarithmic value of an amount of incident light on the photodiode, and an integration circuit for accumulating an output from the logarithmic converter; a voltage controller for control of a voltage to be applied to the transistor; and an output circuit for receiving signals from the pixels and outputting processed signals. The voltage controller realizes a moving object extraction image pickup state in which an image pickup signal is generated for displaying at least a part of the moving object existing in an image picked-up region at a density different from that of a static background part.