公开(公告)号：US20150200106A1

公开(公告)日：2015-07-16

申请号：US14671601

申请日：2015-03-27

Applicant: Lam Research Corporation

Inventor： Joydeep GUHA ,  Sirish K. REDDY ,  Kaushik CHATTOPADHYAY ,  Thomas W. MOUNTSIER ,  Aaron EPPLER ,  Thorsten LILL ,  Vahid VAHEDI ,  Harmeet SINGH

IPC: H01L21/308 ,  H01L21/306

CPC classification number: H01L21/3081 ,  H01L21/30604 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/11556

Abstract: A method for etching features in a stack is provided. A combination hardmask is formed by forming a first hardmask layer comprising carbon or silicon oxide over the stack, forming a second hardmask layer comprising metal over the first hardmask layer, and patterning the first and second hardmask layers. The stack is etched through the combination hardmask.