公开(公告)号：US20240298490A1

公开(公告)日：2024-09-05

申请号：US18664067

申请日：2024-05-14

Applicant: LG Display Co., Ltd.

Inventor： Kyeong-Ju MOON ,  So-Young NOH ,  Ki-Tae KIM ,  Hyuk JI

IPC: H10K59/131 ,  H10K50/844

CPC classification number: H10K59/131 ,  H10K50/844

Abstract: Discussed is display apparatus including a substrate including a display area and a non-display area adjacent to the display area, a first thin film transistor disposed on the display area, a first semiconductor pattern of the first thin film transistor including an oxide semiconductor, a second thin film transistor disposed on the display area, a second semiconductor pattern of the second thin film transistor including a material different from the first semiconductor pattern, and a first conductive line disposed on the non-display area, a first portion of the first conductive line having a round shape.

公开(公告)号：US20230189591A1

公开(公告)日：2023-06-15

申请号：US18105682

申请日：2023-02-03

Applicant: LG Display Co., Ltd.

Inventor： Kyeong-Ju MOON ,  So-Young NOH ,  Ki-Tae KIM ,  Hyuk JI

IPC: H10K59/131 ,  H10K50/844

CPC classification number: H10K59/131 ,  H10K50/844

Abstract: A display apparatus can include a substrate including a display area and a non-display area adjacent to the display area, a first thin film transistor in the display area, and a second thin film transistor in the display area. The first thin film transistor can include a first semiconductor pattern on the substrate, a first gate electrode overlapping the first semiconductor pattern, and a first source electrode and a first drain electrode both connected to the first semiconductor pattern. The second thin film transistor can include a second semiconductor pattern, a second gate electrode overlapping the second semiconductor pattern, a second source electrode connected to the second semiconductor pattern, and a second drain electrode connected to the second semiconductor pattern. The display apparatus can further include a conductive pattern between the display area and the second semiconductor pattern.

公开(公告)号：US20220367526A1

公开(公告)日：2022-11-17

申请号：US17876371

申请日：2022-07-28

Applicant: LG Display Co., Ltd.

Inventor： Ki-Tae KIM ,  So-Young NOH ,  Ui-Jin CHUNG ,  Kyeong-Ju MOON ,  Hyuk JI

IPC: H01L27/12 ,  H01L27/15 ,  H01L33/62 ,  H01L29/786 ,  H01L33/54

Abstract: A display apparatus can include a driving circuit on a device substrate, the driving circuit including a first thin film transistor and a second thin film transistor, a first insulating layer on the first thin film transistor and the second thin film transistor of the driving circuit, a second insulating layer on the first insulating layer, and a light-emitting device on the second insulating layer, the light-emitting device being electrically connected to the second thin film transistor of the driving circuit. Each of the first thin film transistor and the second thin film transistor includes an oxide semiconductor pattern and a gate electrode overlapping a portion of the oxide semiconductor pattern. The gate electrode has a stacked structure of a first hydrogen barrier layer and a low-resistance electrode.