公开(公告)号：US10115341B2

公开(公告)日：2018-10-30

申请号：US15184599

申请日：2016-06-16

Applicant: LG DISPLAY CO., LTD.

Inventor： Namyong Kong ,  Woosup Shin ,  Kwonshik Park ,  Chonghun Park ,  Uijin Chung

IPC: G09G3/3233 ,  G09G3/325 ,  G09G3/3266 ,  G09G3/3283 ,  H01L27/32 ,  H01L29/786 ,  H01L27/12

Abstract: An organic light emitting display includes a display panel, which includes a plurality of pixels and displays an image, and a data driving circuit differently outputting a compensation voltage depending on a sensing value based on a driving current. Each of the plurality of pixels includes an organic light emitting diode, a driving thin film transistor (TFT) having a double gate structure including a main gate electrode and a sub-gate electrode, a switching TFT applying a data voltage determining the driving current to the main gate electrode of the driving TFT, and a compensation TFT applying the compensation voltage for compensating for a shift amount of a threshold voltage of the driving TFT to the sub-gate electrode of the driving TFT.

公开(公告)号：US20150187574A1

公开(公告)日：2015-07-02

申请号：US14140797

申请日：2013-12-26

Applicant: LG Display Co. Ltd. ,  Intermolecular Inc.

Inventor： Minh Huu Le ,  Yoon-Kyung Chang ,  Seon-Mee Cho ,  Min-Cheol Kim ,  Sang Lee ,  Kwon-Sik Park ,  Woosup Shin

IPC: H01L21/02 ,  H01L29/66

CPC classification number: H01L21/02631 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO) with intra-layer variations and methods for forming such IGZO. At least a portion of a substrate is positioned in a processing chamber. A first sub-layer of an IGZO layer is formed above the at least a portion of the substrate while the at least a portion of the substrate is in the processing chamber. The first sub-layer of the IGZO layer is formed using a first set of processing conditions. A second sub-layer of the IGZO layer is formed above the first sub-layer of the IGZO layer while the at least a portion of the substrate is in the processing chamber. The second sub-layer of the IGZO layer is formed using a second set of processing conditions. The second set of processing conditions is different than the first set of processing conditions.

Abstract translation: 本文所述的实施方案提供了具有层内变化的晶体铟镓锌氧化物（IGZO）的方法和用于形成这种IGZO的方法。 衬底的至少一部分位于处理室中。 在基板的至少一部分上方形成IGZO层的第一子层，同时基板的至少一部分位于处理室中。 使用第一组处理条件形成IGZO层的第一子层。 IGZO层的第二子层形成在IGZO层的第一子层的上方，而基板的至少一部分在处理室内。 IGZO层的第二子层使用第二组处理条件形成。 第二组处理条件与第一组处理条件不同。

公开(公告)号：US20140168194A1

公开(公告)日：2014-06-19

申请号：US14078796

申请日：2013-11-13

Applicant: LG DISPLAY CO., LTD.

Inventor： Namyong Kong ,  Woosup Shin ,  Kwonshik Park ,  Chonghun Park ,  Uijin Chung

IPC: G09G3/32

CPC classification number: G09G3/3233 ,  G09G3/325 ,  G09G3/3266 ,  G09G3/3283 ,  G09G2300/043 ,  G09G2300/0469 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2320/0233 ,  G09G2320/0295 ,  G09G2320/043 ,  H01L27/1214 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/78645

Abstract: An organic light emitting display includes a display panel, which includes a plurality of pixels and displays an image, and a data driving circuit differently outputting a compensation voltage depending on a sensing value based on a driving current. Each of the plurality of pixels includes an organic light emitting diode, a driving thin film transistor (TFT) having a double gate structure including a main gate electrode and a sub-gate electrode, a switching TFT applying a data voltage determining the driving current to the main gate electrode of the driving TFT, and a compensation TFT applying the compensation voltage for compensating for a shift amount of a threshold voltage of the driving TFT to the sub-gate electrode of the driving TFT.

Abstract translation: 有机发光显示器包括：显示面板，其包括多个像素并显示图像;以及数据驱动电路，其基于驱动电流根据感测值不同地输出补偿电压。 多个像素中的每一个包括有机发光二极管，具有包括主栅电极和子栅电极的双栅极结构的驱动薄膜晶体管（TFT），施加确定驱动电流的数据电压的开关TFT 驱动TFT的主栅电极和补偿TFT，其补偿用于补偿驱动TFT的阈值电压的偏移量到驱动TFT的子栅电极的补偿电压。