公开(公告)号：US20240349546A1

公开(公告)日：2024-10-17

申请号：US18594460

申请日：2024-03-04

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Kaoru HATANO ,  Satoshi SEO ,  Takaaki NAGATA ,  Tatsuya OKANO

IPC分类号： H10K59/124 ,  G02F1/1362 ,  G06F1/16 ,  H01L27/12 ,  H01L29/786 ,  H01L33/42 ,  H01L33/48 ,  H10K50/125 ,  H10K50/828 ,  H10K50/84 ,  H10K50/842 ,  H10K50/844 ,  H10K50/86 ,  H10K59/12 ,  H10K59/30 ,  H10K59/38 ,  H10K71/80 ,  H10K77/10 ,  H10K101/00 ,  H10K102/00

CPC分类号： H10K59/124 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/78678 ,  H01L33/48 ,  H10K50/84 ,  H10K50/8423 ,  H10K50/8426 ,  H10K50/844 ,  H10K59/38 ,  H10K77/111 ,  G02F1/136209 ,  G02F1/136222 ,  G06F1/1641 ,  H01L27/1225 ,  H01L33/42 ,  H10K50/125 ,  H10K50/828 ,  H10K50/865 ,  H10K59/12 ,  H10K59/1201 ,  H10K59/30 ,  H10K71/80 ,  H10K2101/27 ,  H10K2102/311 ,  H10K2102/351 ,  Y02E10/549 ,  Y02P70/50

摘要： It is an object to provide a flexible light-emitting device with long lifetime in a simple way and to provide an inexpensive electronic device with long lifetime using the flexible light-emitting device. A flexible light-emitting device is provided, which includes a substrate having flexibility and a light-transmitting property with respect to visible light; a first adhesive layer over the substrate; an insulating film containing nitrogen and silicon over the first adhesive layer; a light-emitting element including a first electrode, a second electrode facing the first electrode, and an EL layer between the first electrode and the second electrode; a second adhesive layer over the second electrode; and a metal substrate over the second adhesive layer, wherein the thickness of the metal substrate is 10 μm to 200 μm inclusive. Further, an electronic device using the flexible light-emitting device is provided.

公开(公告)号：US12085820B2

公开(公告)日：2024-09-10

申请号：US18122113

申请日：2023-03-15

申请人： InnoLux Corporation

发明人： Chen-Kuan Kao ,  Ching-Che Yang

IPC分类号： G02F1/13 ,  G02F1/1335 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/02 ,  H01L27/12 ,  H01L29/786 ,  H10K59/38 ,  G02F1/1333 ,  H01L29/66 ,  H10K50/80 ,  H10K50/86 ,  H10K59/12 ,  H10K59/122 ,  H10K59/126

CPC分类号： G02F1/136204 ,  G02F1/133514 ,  G02F1/136209 ,  G02F1/136222 ,  G02F1/1368 ,  H01L27/0255 ,  H01L27/0292 ,  H01L27/0296 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/78633 ,  G02F1/133334 ,  G02F2201/52 ,  G09G2300/0408 ,  G09G2300/0804 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78666 ,  H01L29/78669 ,  H01L29/78675 ,  H01L29/78678 ,  H10K50/865 ,  H10K50/868 ,  H10K59/12 ,  H10K59/122 ,  H10K59/126 ,  H10K59/38

摘要： An electronic device including a first substrate, a semiconductor layer, a second substrate and a color filter is disclosed. The first substrate has a peripheral region. The semiconductor layer is disposed on the first substrate in the peripheral region. The second substrate is opposite to the first substrate. The color filter is disposed between the first substrate and the second substrate and in the peripheral region of the first substrate, and the color filter overlaps the semiconductor layer.

公开(公告)号：US12080720B2

公开(公告)日：2024-09-03

申请号：US18207175

申请日：2023-06-08

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake

IPC分类号： H01L27/12 ,  G09G3/20 ,  G11C19/28 ,  H01L29/04 ,  H01L29/10 ,  H01L29/24 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/786 ,  H01L29/49 ,  H10K59/121

CPC分类号： H01L27/1229 ,  G09G3/20 ,  G11C19/28 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/247 ,  H01L29/41733 ,  H01L29/42372 ,  H01L29/45 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  G09G2310/0267 ,  G09G2310/0275 ,  G09G2310/0286 ,  H01L27/12 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/78609 ,  H10K59/1213

摘要： An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured.

公开(公告)号：US12068187B2

公开(公告)日：2024-08-20

申请号：US18424790

申请日：2024-01-27

申请人： Monolithic 3D Inc.

发明人： Zvi Or-Bach ,  Brian Cronquist ,  Deepak C. Sekar

IPC分类号： H01L21/683 ,  G11C8/16 ,  H01L21/74 ,  H01L21/762 ,  H01L21/768 ,  H01L21/822 ,  H01L21/8238 ,  H01L21/84 ,  H01L23/48 ,  H01L23/525 ,  H01L27/02 ,  H01L27/06 ,  H01L27/092 ,  H01L27/10 ,  H01L27/105 ,  H01L27/118 ,  H01L27/12 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H10B10/00 ,  H10B12/00 ,  H10B20/00 ,  H10B41/20 ,  H10B41/40 ,  H10B41/41 ,  H10B43/20 ,  H10B43/40 ,  H01L23/00 ,  H01L23/367 ,  H01L25/00 ,  H01L25/065 ,  H10B20/20

CPC分类号： H01L21/6835 ,  G11C8/16 ,  H01L21/743 ,  H01L21/76254 ,  H01L21/76898 ,  H01L21/8221 ,  H01L21/823828 ,  H01L21/84 ,  H01L23/481 ,  H01L23/5252 ,  H01L27/0207 ,  H01L27/0688 ,  H01L27/092 ,  H01L27/10 ,  H01L27/105 ,  H01L27/11807 ,  H01L27/11898 ,  H01L27/1203 ,  H01L29/4236 ,  H01L29/66272 ,  H01L29/66621 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/66901 ,  H01L29/78 ,  H01L29/7841 ,  H01L29/7843 ,  H01L29/7881 ,  H01L29/792 ,  H10B10/00 ,  H10B10/125 ,  H10B12/053 ,  H10B12/09 ,  H10B12/20 ,  H10B12/50 ,  H10B20/00 ,  H10B41/20 ,  H10B41/40 ,  H10B41/41 ,  H10B43/20 ,  H10B43/40 ,  H01L23/3677 ,  H01L24/13 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/1214 ,  H01L27/1266 ,  H01L2221/68368 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81005 ,  H01L2224/83894 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00011 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01066 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12033 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H10B12/05 ,  H10B20/20

摘要： A 3D semiconductor device, the device including: a first level including a first single crystal layer, the first level including first transistors, where each of the first transistors includes a single crystal channel; first metal layer; a second metal layer overlaying the first metal layer; and a second level including a second single crystal layer, the second level including second transistors and at least one third metal layer, where the second level overlays the first level, where at least one of the second transistors includes a transistor channel, where the second level includes a plurality of DRAM memory cells, where each of the plurality of DRAM memory cells includes at least one of the second transistors and one capacitor, where the second level is directly bonded to the first level, and where the bonded includes metal to metal bonds.

公开(公告)号：US20240266359A1

公开(公告)日：2024-08-08

申请号：US18640136

申请日：2024-04-19

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Atsushi UMEZAKI

IPC分类号： H01L27/12 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/3266 ,  G09G3/36 ,  G11C19/28 ,  H01H71/02 ,  H01H71/10 ,  H01L27/105 ,  H01L27/13 ,  H01L29/423 ,  H01L29/786 ,  H10K59/121 ,  H10K59/131

CPC分类号： H01L27/124 ,  G02F1/133345 ,  G02F1/136286 ,  G02F1/1368 ,  G09G3/3266 ,  G09G3/3677 ,  G11C19/28 ,  H01H71/02 ,  H01H71/10 ,  H01L27/105 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/78663 ,  H01L29/78678 ,  G02F1/134309 ,  G02F1/13454 ,  G02F1/13624 ,  G02F2202/103 ,  G09G3/3688 ,  G09G2300/0417 ,  G09G2300/0426 ,  G09G2320/043 ,  G09G2330/021 ,  G09G2330/023 ,  H01L27/13 ,  H01L29/42384 ,  H01L29/78696 ,  H10K59/1213 ,  H10K59/131

摘要： By applying an AC pulse to a gate of a transistor which easily deteriorates, a shift in threshold voltage of the transistor is suppressed. However, in a case where amorphous silicon is used for a semiconductor layer of a transistor, the occurrence of a shift in threshold voltage naturally becomes a problem for a transistor which constitutes a part of circuit that generates an AC pulse. A shift in threshold voltage of a transistor which easily deteriorates and a shift in threshold voltage of a turned-on transistor are suppressed by signal input to a gate electrode of the transistor which easily deteriorates through the turned-on transistor. In other words, a structure for applying an AC pulse to a gate electrode of a transistor which easily deteriorates through a transistor to a gate electrode of which a high potential (VDD) is applied, is included.

公开(公告)号：US20240266332A1

公开(公告)日：2024-08-08

申请号：US18620480

申请日：2024-03-28

申请人： Samsung Display Co., LTD.

发明人： Hyung Rae CHA ,  Dong Uk KIM ,  Sung Ae JANG ,  Ji Hyun HAM

IPC分类号： H01L25/075 ,  H01L27/12 ,  H01L33/00 ,  H01L33/22 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62

CPC分类号： H01L25/0753 ,  H01L27/1214 ,  H01L33/007 ,  H01L33/0093 ,  H01L33/22 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025

摘要： A light-emitting element includes a first end portion and a second end portion disposed in a length direction of the light-emitting element, a first electrode corresponding to the first end portion, a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a second electrode on the second semiconductor layer and corresponding to the second end portion. The second electrode includes a first layer on the first semiconductor layer, and a second layer on the first layer. The first semiconductor layer includes a p-type semiconductor layer doped with a p-type dopant. The second semiconductor layer includes an n-type semiconductor layer doped with an n-type dopant. The first electrode is in ohmic contact with the first semiconductor layer. The second electrode is in ohmic contact with the second semiconductor layer.

公开(公告)号：US12046586B2

公开(公告)日：2024-07-23

申请号：US17269737

申请日：2019-02-20

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Tae Jin Kong ,  Dae Hyun Kim ,  Myeong Hee Kim ,  Veidhes Basrur ,  Je Won Yoo ,  Xinxing Li ,  Hee Keun Lee ,  Bek Hyun Lim ,  Hyun Min Cho ,  Chang Il Tae

IPC分类号： H01L25/075 ,  B82B3/00 ,  H01L27/12 ,  H01L33/00 ,  H01L33/24 ,  H01L33/36 ,  H01L33/44 ,  H01L33/62 ,  G09G3/32

CPC分类号： H01L25/0753 ,  B82B3/0052 ,  H01L27/1214 ,  H01L33/0062 ,  H01L33/24 ,  H01L33/36 ,  H01L33/44 ,  H01L33/62 ,  G09G3/32 ,  G09G2300/0842 ,  H01L2933/0016 ,  H01L2933/0025

摘要： A light emitting device includes first and second electrodes disposed on a substrate; an insulating layer disposed on the substrate and including a groove extending in a first direction intersecting with the first and the second electrodes, and first and second contact portions that expose areas of the first and the second electrodes; light emitting elements disposed in the groove between the first and the second electrodes, each including first and second ends electrically connected to the first and second electrodes, respectively; a first contact electrode electrically connected to the light emitting elements on the first ends, and electrically connected to the first electrode on the first contact portion; and a second contact electrode electrically connected to the light emitting elements on the second ends, and electrically connected to the second electrode on the second contact portion.

公开(公告)号：US12041833B2

公开(公告)日：2024-07-16

申请号：US17554762

申请日：2021-12-17

申请人： Samsung Display Co., Ltd.

发明人： Seung Lyong Bok ,  Hee June Kwak ,  Mu Gyeom Kim ,  Min Soo Kim ,  Won Ki Hong

IPC分类号： H10K59/35 ,  G09G3/3233 ,  H10K59/123 ,  H10K59/128 ,  H10K59/90 ,  G09G3/3291 ,  H01L27/12

CPC分类号： H10K59/35 ,  G09G3/3233 ,  H10K59/123 ,  H10K59/128 ,  H10K59/90 ,  G09G3/3291 ,  H01L27/1214

摘要： A display apparatus includes: a first substrate having a front surface and a rear surface; a first display layer disposed on the front surface of the first substrate, the first display layer configured to emit light in a front direction; a second display layer disposed on the rear surface of the first substrate, the second display layer configured to emit light in a rear direction; and a pressure sensor disposed on the rear surface of the first substrate, the pressure sensor configured to sense a pressure of a touch of a user.

公开(公告)号：US20240234399A9

公开(公告)日：2024-07-11

申请号：US18494109

申请日：2023-10-25

申请人： Apple Inc.

发明人： John A. Higginson ,  Andreas Bibl ,  Hsin-Hua Hu

IPC分类号： H01L25/16 ,  H01L23/31 ,  H01L25/00 ,  H01L25/075 ,  H01L27/12 ,  H01L33/00 ,  H01L33/06 ,  H01L33/42 ,  H01L33/44 ,  H01L33/54 ,  H01L33/62

CPC分类号： H01L25/167 ,  H01L23/3171 ,  H01L25/0753 ,  H01L25/50 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1262 ,  H01L33/005 ,  H01L33/06 ,  H01L33/42 ,  H01L33/44 ,  H01L33/54 ,  H01L33/62 ,  H01L21/56

摘要： A method and structure for receiving a micro device on a receiving substrate are disclosed. A micro device such as a micro LED device is punched-through a passivation layer covering a conductive layer on the receiving substrate, and the passivation layer is hardened. In an embodiment the micro LED device is punched-through a B-staged thermoset material. In an embodiment the micro LED device is punched-through a thermoplastic material.

公开(公告)号：US12035577B2

公开(公告)日：2024-07-09

申请号：US17972160

申请日：2022-10-24

申请人： Samsung Display Co., Ltd.

发明人： Heerim Song ,  Yujin Lee ,  Haemin Kim ,  Cheolgon Lee

IPC分类号： H10K59/12 ,  H10K59/121 ,  H10K59/124 ,  H10K59/131 ,  G09G3/3258 ,  H01L27/12 ,  H10K59/126 ,  H10K59/35

CPC分类号： H10K59/124 ,  H10K59/1213 ,  H10K59/131 ,  G09G3/3258 ,  G09G2300/0809 ,  H01L27/1214 ,  H10K59/126 ,  H10K59/352

摘要： A display device includes an inorganic insulating layer having a groove surrounding pixel areas, a first thin film transistor in a first pixel area of a substrate, a second thin film transistor in a second pixel area of the substrate, a first electrode layer overlapping a first gate electrode of the first thin film transistor and a second gate electrode of the second thin film transistor, an organic material layer disposed in the groove, a data line extending over the organic material layer in a second direction, and a first connecting line extending across the organic material layer in a first direction, disposed between the first electrode layer and the data line, and overlapping the first electrode layer.