公开(公告)号：US20200184859A1

公开(公告)日：2020-06-11

申请号：US16789053

申请日：2020-02-12

Applicant: LG ELECTRONICS INC.

Inventor： Changseo PARK ,  Seongmin MOON ,  Bongchu SHIM ,  Kiseong JEON ,  Hyunwoo CHO

IPC: G09F9/33 ,  H01L33/44 ,  H01L33/62 ,  H01L27/15

Abstract: Discussed in a method of fabricating a display device, the method including transferring a substrate to an assembly position, and placing a plurality of semiconductor light emitting devices each having a first conductive semiconductor layer and a second conductive semiconductor layer into a fluid chamber, guiding a movement of the plurality of semiconductor light emitting devices in the fluid chamber to assemble the plurality of semiconductor light emitting devices at preset positions of the substrate, etching at least one of the first conductive semiconductor layer and the second conductive semiconductor layer while the plurality of semiconductor light emitting devices are placed at the preset positions of the substrate and connecting a first wiring electrode and a second wiring electrode respectively to each of the plurality of semiconductor light emitting devices.

公开(公告)号：US20190325790A1

公开(公告)日：2019-10-24

申请号：US16415770

申请日：2019-05-17

Applicant: LG ELECTRONICS INC.

Inventor： Changseo PARK ,  Seongmin MOON ,  Bongchu SHIM ,  Kiseong JEON ,  Hyunwoo CHO

IPC: G09F9/33 ,  H01L27/15 ,  H01L33/44 ,  H01L33/62

Abstract: The present disclosure relates to a display device using semiconductor light emitting devices and a fabrication method thereof, and the display device according to the present disclosure can include a plurality of semiconductor light emitting devices, a first wiring electrode and a second wiring electrode respectively extended from the semiconductor light emitting devices to supply an electric signal to the semiconductor light emitting devices, a plurality of pair electrodes disposed on the substrate, and provided with a first electrode and a second electrode configured to generate an electric field when an electric current is supplied, and a dielectric layer formed to cover the pair electrodes, wherein the first wiring electrode and the second wiring electrode are formed on an opposite side to the plurality of the pair electrodes with respect to the semiconductor light emitting devices.