公开(公告)号：US20160118543A1

公开(公告)日：2016-04-28

申请号：US14922620

申请日：2015-10-26

Applicant: LG INNOTEK CO., LTD.

Inventor： Woo Sik LIM ,  Jae Won SEO ,  Bum Jin YIM

IPC: H01L33/40 ,  H01L33/62 ,  H01L33/44 ,  H01L33/46 ,  H01L33/42 ,  H01L33/38

CPC classification number: H01L33/405 ,  H01L33/382 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/16245 ,  H01L2924/181 ,  H01L2924/00012

Abstract: A light emitting device may include a substrate, a light emitting structure disposed under the substrate, the light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first electrode configured to penetrate the second conductive semiconductor layer and the active layer, so as to come into contact with the first conductive semiconductor layer, a contact layer configured to come into contact with the second conductive semiconductor layer, a first insulation layer disposed between the second conductive semiconductor layer and the first electrode and between the active layer and the first electrode, the first insulation layer being provided for capping of a side portion and an upper portion of the contact layer, and a second electrode configured to penetrate the first insulation layer, so as to come into contact with the contact layer.

Abstract translation: 发光器件可以包括衬底，设置在衬底下方的发光结构，发光结构包括第一导电半导体层，有源层和第二导电半导体层，第一电极被配置为穿透第二导电半导体 层和有源层，以便与第一导电半导体层接触，被配置为与第二导电半导体层接触的接触层，设置在第二导电半导体层和第一电极之间的第一绝缘层和 在所述有源层和所述第一电极之间，所述第一绝缘层设置成用于覆盖所述接触层的侧部和上部;以及第二电极，被配置为穿透所述第一绝缘层，以便与所述接触层接触 接触层。