公开(公告)号：US20180026163A1

公开(公告)日：2018-01-25

申请号：US15550955

申请日：2016-03-16

Applicant: LG INNOTEK CO., LTD.

Inventor： Jae Won SEO ,  Hoe Jun KIM ,  Bum Jin YIM ,  Jun Hee HONG

IPC: H01L33/44 ,  H01L33/62 ,  H01L33/40

CPC classification number: H01L33/44 ,  H01L33/145 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/62

Abstract: A light emitting device package, according to an embodiment, includes: a substrate; a light emitting structure that is disposed below the substrate and includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first bonding pad connected with the first conductive type semiconductor layer while being embedded in a through-hole exposed the first conductive type semiconductor layer by passing through the active layer and the second conductive type semiconductor layer; a second bonding pad that is disposed below the second conductive type semiconductor layer while being spaced apart from the first bonding pad and is connected with the second conductive type semiconductor layer; a first insulation layer disposed on the lateral portion of the light emitting structure in the through-hole and on the lower inner edge of the light emitting structure; and a second insulation layer disposed between the first insulation layer and the first bonding pad in the through-hole.

公开(公告)号：US20160284941A1

公开(公告)日：2016-09-29

申请号：US15077161

申请日：2016-03-22

Applicant: LG INNOTEK CO., LTD.

Inventor： Jae Won SEO ,  Sang Youl LEE ,  Sung Ho JUNG ,  Jin Kyung CHOI

IPC: H01L33/46 ,  H01L33/62 ,  H01L33/56 ,  H01L33/42

CPC classification number: H01L33/46 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/56 ,  H01L33/62

Abstract: A light emitting device and a light emitting device package are provided. The light emitting device may include a substrate, a light emitting structure provided under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first insulating layer configured to expose the second conductive semiconductor layer and provided on a lower edge of the light emitting structure, a first light permeable electrode layer provided under the second conductive semiconductor layer exposed by the first insulating layer, a second light permeable electrode layer provided under the first insulating layer and the first light permeable electrode layer, and a reflective layer provided under the second light permeable electrode layer.

Abstract translation: 提供一种发光器件和发光器件封装。 发光器件可以包括衬底，设置在衬底下方并且包括第一导电半导体层，有源层和第二导电半导体层的发光结构，被配置为暴露第二导电半导体层并提供的第一绝缘层 在所述发光结构的下边缘上设置有由所述第一绝缘层露出的所述第二导电半导体层下方的第一透光性电极层，设置在所述第一绝缘层下方的第二透光性电极层和所述第一透光性电极层， 以及设置在第二透光性电极层下方的反射层。

公开(公告)号：US20160111601A1

公开(公告)日：2016-04-21

申请号：US14879798

申请日：2015-10-09

Applicant: LG INNOTEK CO., LTD.

Inventor： Sang Youl LEE ,  Jae Won SEO

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/54 ,  H01L33/46

CPC classification number: H01L33/382 ,  H01L33/38 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/486 ,  H01L33/54 ,  H01L33/62

Abstract: Embodiments provide a light emitting device including a substrate, a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, disposed under the substrate, a reflective layer disposed under the second conductive semiconductor layer, the reflective layer having at least one first through-hole formed in a first direction, the first direction being a thickness direction of the light emitting structure, a contact layer embedded in at least one second through-hole penetrating the reflective layer, the second conductive semiconductor layer, and the active layer so as to be connected to the first conductive semiconductor layer, and an insulation layer disposed between the contact layer and each of the reflective layer, the second conductive semiconductor layer, and the active layer, the insulation layer being embedded in the first through-hole.

Abstract translation: 实施例提供了一种发光器件，其包括衬底，包括设置在衬底下方的第一导电半导体层，有源层和第二导电半导体层的发光结构，设置在第二导电半导体层下方的反射层，反射层 层，其具有沿第一方向形成的至少一个第一通孔，所述第一方向为所述发光结构的厚度方向，嵌入在贯穿所述反射层的至少一个第二通孔中的接触层，所述第二导电半导体层 和有源层，以便连接到第一导电半导体层，以及设置在接触层与反射层，第二导电半导体层和有源层中的每一个之间的绝缘层，绝缘层嵌入 第一个通孔。

公开(公告)号：US20190341529A1

公开(公告)日：2019-11-07

申请号：US16515450

申请日：2019-07-18

Applicant: LG INNOTEK CO., LTD.

Inventor： Woo Sik LIM ,  Jae Won SEO

IPC: H01L33/46 ,  H01L33/38 ,  H01L33/44 ,  H01L33/48 ,  H01L33/40 ,  H01L33/62

Abstract: A light emitting device includes a substrate; a light emitting structure disposed on the substrate; a first insulation layer disposed on the light emitting structure; a second insulation layer disposed on the first insulation layer; a first electrode and a second electrode electrically connected to the light emitting structure; a first pad electrically connected to the first electrode; and a second pad electrically connected to the second electrode

公开(公告)号：US20190051801A1

公开(公告)日：2019-02-14

申请号：US16075490

申请日：2017-02-03

Applicant: LG INNOTEK CO., LTD.

Inventor： Jae Won SEO ,  Sang Youl LEE ,  Woo Sik LIM

IPC: H01L33/62 ,  H01L33/10 ,  H01L33/38 ,  H01L33/32

Abstract: A light-emitting element according to an embodiment comprises: a light-emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer formed between the first and second conductive type semiconductor layers; a reflective layer formed on the second conductive type semiconductor layer; a capping layer formed on the reflective layer to surround the reflective layer; a first electrode electrically connected with the first conductive type semiconductor layer; a first bonding pad electrically connected with the first electrode; and a second bonding pad electrically connected with the second electrode, wherein the light-emitting structure includes a recess extending to a region of the first conductive type semiconductor layer through the second conductive type semiconductor layer and the active layer; the first electrode is formed within the recess and electrically connected with the first conductive type semiconductor layer, and includes a region bent along a side surface of the second bonding pad; the reflective layer is formed to be spaced apart from the recess; and the capping layer includes a transparent electrode.

公开(公告)号：US20170170365A1

公开(公告)日：2017-06-15

申请号：US15315938

申请日：2015-05-26

Applicant: LG INNOTEK CO., LTD.

Inventor： Woo Sik LIM ,  Jae Won SEO

IPC: H01L33/46 ,  H01L33/48 ,  H01L33/62 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L33/46 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L33/483 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A light emitting element according to an embodiment includes a substrate; a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer which are disposed on the substrate; a reflective layer which is disposed on the light emitting structure and has first and second areas neighboring each other in a horizontal direction; a first electrode which is disposed in at least a portion of the first area of the reflective layer with passing through the second conductive semiconductor layer and the active layer and extending to the first conductive semiconductor layer; a first insulating layer disposed between the first electrode and the side of the light emitting structure and between the first electrode and the reflective layer; a diffusion barrier layer disposed in the second area of the reflective layer; a second insulating layer disposed on the first electrode and the diffusion barrier layer; and first and second bonding layers which pass through the second insulating layer and are connected to the first electrode and the diffusion barrier layer, respectively.

公开(公告)号：US20190109263A1

公开(公告)日：2019-04-11

申请号：US16215238

申请日：2018-12-10

Applicant: LG INNOTEK CO., LTD.

Inventor： Woo Sik LIM ,  Jae Won SEO

IPC: H01L33/46 ,  H01L33/38 ,  H01L33/44 ,  H01L33/48 ,  H01L33/40 ,  H01L33/62

CPC classification number: H01L33/46 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L33/483 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A light emitting element according to an embodiment includes a substrate; a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer which are disposed on the substrate; a reflective layer which is disposed on the light emitting structure and has first and second areas neighboring each other in a horizontal direction; a first electrode which is disposed in at least a portion of the first area of the reflective layer with passing through the second conductive semiconductor layer and the active layer and extending to the first conductive semiconductor layer; a first insulating layer disposed between the first electrode and the side of the light emitting structure and between the first electrode and the reflective layer; a diffusion barrier layer disposed in the second area of the reflective layer; a second insulating layer disposed on the first electrode and the diffusion barrier layer; and first and second bonding layers which pass through the second insulating layer and are connected to the first electrode and the diffusion barrier layer, respectively.

公开(公告)号：US20190013441A1

公开(公告)日：2019-01-10

申请号：US16066511

申请日：2016-12-26

Applicant: LG INNOTEK CO., LTD.

Inventor： Jun Hee HONG ,  Jae Won SEO

IPC: H01L33/38 ,  H01L33/24 ,  H01L33/44 ,  H01L33/46 ,  H01L33/42 ,  H01L33/62 ,  H01L33/14 ,  H01L33/40

Abstract: Exemplary embodiments relate to a light-emitting element capable of facilitating current spreading and improving a driving voltage by increasing a connection area between a first electrode and a first semiconductor layer. The light-emitting element includes: a light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer; a groove configured to expose the first semiconductor layer at a bottom surface thereof and expose the first semiconductor layer, the active layer, and the second semiconductor layer at side surfaces thereof due to the light-emitting structure being removed; a first electrode connected to the first semiconductor layer exposed at the bottom surface of the groove; a first insulating pattern configured to cover the first semiconductor layer, the active layer, and the second semiconductor layer which are exposed at the side surfaces of the groove, wherein one end thereof extends to a portion of an upper surface of the first electrode and the other end thereof extends to a portion of an upper surface of the second semiconductor layer such that the upper surfaces of the first electrode and the second semiconductor layer are partially exposed; a first reflective layer disposed on the exposed second semiconductor layer; a second reflective layer configured to expose the second semiconductor layer and the first electrode; and a second electrode disposed on the second semiconductor layer exposed by the second reflective layer.

公开(公告)号：US20170236979A1

公开(公告)日：2017-08-17

申请号：US15319633

申请日：2015-06-15

Applicant: LG INNOTEK CO., LTD.

Inventor： Jae Won SEO ,  Seok Beom CHOI

IPC: H01L33/46 ,  H01L33/06 ,  H01L33/62 ,  H01L33/30 ,  H01L33/40 ,  H01L33/42 ,  H01L27/15 ,  H01L33/32

CPC classification number: H01L33/46 ,  F21K9/232 ,  F21Y2115/10 ,  G02B6/0073 ,  H01L25/075 ,  H01L27/153 ,  H01L27/156 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62

Abstract: An embodiment provides a light emitting device comprising: a substrate; a plurality of light emitting cells disposed on the substrate to be spaced apart from one another, each light emitting cell comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, the light emitting cell having a via hole passing through the second conductive type semiconductor layer, the active layer and a part of the first conductive type semiconductor layer; a first electrode layer electrically connected to the first conductive type semiconductor layer at a bottom of the via hole; a second electrode layer disposed on the second conductive type semiconductor layer; and a first passivation layer electrically separating the first electrode layer from the second electrode layer, wherein the first electrode layer of one light emitting cell is electrically connected to the second electrode layer of another light emitting cell adjacent to the one light emitting cell, and due to the first passivation layer and the first electrode layer formed on the upper surfaces of the plurality of light emitting cells and on the substrate between the light emitting cells at intervals, light extraction efficiency on the whole surface of the light emitting device can be improved, thereby increasing light emitting efficiency.

公开(公告)号：US20190221717A1

公开(公告)日：2019-07-18

申请号：US16363178

申请日：2019-03-25

Applicant: LG INNOTEK CO., LTD.

Inventor： Woo Sik LIM ,  Jae Won SEO

IPC: H01L33/46 ,  H01L33/40 ,  H01L33/62 ,  H01L33/44 ,  H01L33/48 ,  H01L33/38

CPC classification number: H01L33/46 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L33/483 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A light emitting device includes a substrate; a light emitting structure disposed on the substrate and including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a first electrode electrically connected to the first conductivity type semiconductor layer; a second electrode electrically connected to the second conductivity type semiconductor layer; a first insulation layer disposed on the light emitting structure; a second insulation layer disposed on the first insulation layer; and a first pad and a second pad arranged over the second insulation layer.