公开(公告)号：US20170130330A1

公开(公告)日：2017-05-11

申请号：US14935330

申请日：2015-11-06

申请人： Lam Research Corporation

发明人： Katie Lynn Nardi ,  Nerissa Sue Draeger

IPC分类号： C23C16/06 ,  C23C16/455

CPC分类号： C23C16/403 ,  C23C16/45534 ,  H01L21/00 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0228 ,  H01L43/08 ,  H01L43/12

摘要： Methods of fabricating magnetic devices are described herein. Methods involve exposing a magnetic film, such as a CoFeB film, to a reducing agent before, during, or after depositing a metal oxide film using atomic layer deposition or chemical vapor deposition. Some methods include exposing the magnetic film in cycles involving exposure to a reducing agent, exposure to a magnesium-containing precursor, and exposure to an oxidant. Methods are suitable for depositing a magnesium oxide layer on a CoFeB layer to form part of a magnetic tunnel junction.