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公开(公告)号：US20210013034A1
公开(公告)日：2021-01-14
申请号：US15733598
申请日：2019-05-09
IPC分类号： H01L21/02 , H01L21/033
摘要： Methods for making thin-films on semiconductor substrates, which may be patterned using EUV, include: mixing a vapor stream of an organometallic precursor with a vapor stream of a counter-reactant so as to form a polymerized organometallic material; and depositing the organometallic polymer-like material onto the surface of the semiconductor substrate. The mixing and depositing operations may be performed by chemical vapor deposition (CVD), atomic layer deposition (ALD), and ALD with a CVD component, such as a discontinuous, ALD-like process in which metal precursors and counter-reactants are separated in either time or space.
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公开(公告)号：US20230314946A1
公开(公告)日：2023-10-05
申请号：US18005595
申请日：2021-07-16
发明人： Eric Calvin Hansen , Timothy William Weidman , Chenghao Wu , Qinghuang Lin , Kyle Jordan Blakeney , Adrien LaVoie , Sivananda Krishnan Kanakasabapathy , Samantha S.H. Tan , Richard Wise , Yang Pan , Younghee Lee , Katie Lynn Nardi , Kevin Li Gu , Boris Volosskiy
CPC分类号： G03F7/094 , G03F7/0043 , G03F7/095 , G03F7/11 , G03F7/167 , G03F7/2004 , H01L21/0274
摘要： The present disclosure relates to a film formed with a metal precursor and an organic precursor, as well as methods for forming and employing such films. The film can be employed as a photopatternable film or a radiation-sensitive film. In particular embodiments, the film includes alternating layers of metal-containing layers and organic layers. In other embodiments, the film includes a matrix of deposited metal and organic constituents.
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公开(公告)号：US20220308454A1
公开(公告)日：2022-09-29
申请号：US17596858
申请日：2020-06-24
摘要： Various embodiments herein relate to methods, apparatus, and systems for baking metal-containing on a semiconductor substrate in the presence of a reactive gas species. For example, the method may include receiving the substrate in a process chamber, the substrate having a photoresist layer thereon, where the photoresist layer includes a metal-containing photoresist material; flowing a reactive gas species from a gas source, through a gas delivery line, into the process chamber, and exposing the substrate to the reactive gas species in the process chamber; and baking the photoresist layer while the substrate is exposed to the reactive gas species.
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4.发明申请公开(公告)号：US20220365434A1
公开(公告)日：2022-11-17
申请号：US17754019
申请日：2020-10-01
摘要： The present disclosure relates to a patterning structure having a radiation-absorbing layer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the radiation-absorbing layer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.
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公开(公告)号：US20220308462A1
公开(公告)日：2022-09-29
申请号：US17596928
申请日：2020-06-22
发明人： Butch Berney , Alan M. Schoepp , Timothy William Weidman , Kevin Li Gu , Chenghao Wu , Katie Lynn Nardi , Boris Volosskiy , Clint Edward Thomas , Thad Nicholson
IPC分类号： G03F7/20
摘要： Systems and techniques for dry deposition of extreme ultra-violet-sensitive (EUV-sensitive) photoresist layers are discussed. In some such systems, a processing chamber may be provided that features a multi-plenum showerhead that is configured to receive a vaporized organometallic precursor in one plenum and a vaporized counter-reactant thereof in another plenum. The two vaporized reactants may be delivered to a reaction space within the processing chamber and over a wafer support that supports the substrate.
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公开(公告)号：US20220299877A1
公开(公告)日：2022-09-22
申请号：US17753110
申请日：2020-10-08
发明人： Timothy William Weidman , Katie Lynn Nardi , Dries Dictus , Benjamin Kam , Chenghao Wu , Eric Calvin Hansen , Nizan Kenane , Kevin Li Gu
摘要： The present disclosure relates to post-application treatment of a radiation-sensitive film to provide a hardened resist film. In some instances, such films can be used to form a pattern by a positive tone wet development process.
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公开(公告)号：US20230185196A1
公开(公告)日：2023-06-15
申请号：US17995355
申请日：2021-03-31
CPC分类号： G03F7/168 , G03F7/0043
摘要： Disclosed herein are methods and apparatuses for exposing an organic metal-oxide film to a blanket UV treatment prior to a lithographic patterning operation. A blanket UV treatment may be used to shift a solubility curve of the film, such that a lower EUV dose may be used to pattern the film. Additionally, a blanket UV treatment may be used after development to further cure the film.
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公开(公告)号：US20220344136A1
公开(公告)日：2022-10-27
申请号：US17596651
申请日：2020-06-25
发明人： Daniel Peter , Da Li , Timothy William Weidman , Boris Volosskiy , Chenghao Wu , Katie Lynn Nardi , Kevin Li Gu , Leon Taleh , Samantha SiamHwa Tan , Jengyi Yu , Meng Xue
摘要： A metal-containing photoresist film may be deposited on a semiconductor substrate using a dry deposition technique. Unintended metal-containing photoresist material may form on internal surfaces of a process chamber during deposition, bevel and backside cleaning, baking, development, or etch operations. An in situ dry chamber clean may be performed to remove the unintended metal-containing photoresist material by exposure to an etch gas. The dry chamber clean may be performed at elevated temperatures without striking a plasma. In some embodiments, the dry chamber clean may include pumping/purging and conditioning operations.
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公开(公告)号：US20220342301A1
公开(公告)日：2022-10-27
申请号：US17596722
申请日：2020-06-24
发明人： Timothy William Weidman , Kevin Li Gu , Katie Lynn Nardi , Chenghao Wu , Boris Volosskiy , Eric Calvin Hansen
摘要： Various embodiments herein relate to techniques for depositing photoresist material on a substrate. For example, the tin techniques may involve providing the substrate in a reaction chamber; providing a first and second reactant to the reaction chamber, where the first reactant is an organo-metallic precursor having a formula of M1aR1bL1c, where: M1 is a metal having a high patterning radiation-absorption cross-section, R1 is an organic group that survives the reaction between the first reactant and the second reactant and is cleavable from M1 under exposure to patterning radiation, L1 is a ligand, ion, or other moiety that reacts with the second reactant, a≥1, b≥1, and c≥1, and where at least one of the following conditions is satisfied: the photoresist material comprises two or more high-patterning radiation absorbing elements, and/or the photoresist material comprises a composition gradient along a thickness of the photoresist material.
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公开(公告)号：US09988715B2
公开(公告)日：2018-06-05
申请号：US14935330
申请日：2015-11-06
CPC分类号： C23C16/403 , C23C16/45534 , H01L21/00 , H01L21/02175 , H01L21/02274 , H01L21/0228 , H01L43/08 , H01L43/12
摘要： Methods of fabricating magnetic devices are described herein. Methods involve exposing a magnetic film, such as a CoFeB film, to a reducing agent before, during, or after depositing a metal oxide film using atomic layer deposition or chemical vapor deposition. Some methods include exposing the magnetic film in cycles involving exposure to a reducing agent, exposure to a magnesium-containing precursor, and exposure to an oxidant. Methods are suitable for depositing a magnesium oxide layer on a CoFeB layer to form part of a magnetic tunnel junction.
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