公开(公告)号：US20060199339A1

公开(公告)日：2006-09-07

申请号：US11382270

申请日：2006-05-09

申请人： Lawrence Liu ,  Yuan Kao

发明人： Lawrence Liu ,  Yuan Kao

IPC分类号： H01L21/8234

CPC分类号： H01L27/112 ,  H01L27/1126

摘要： A method and structure of manufacture of mask ROM device is provided. Firstly, a semiconductor structure is provided that comprises a first dielectric layer, a plurality of buried bit lines and a plurality of code areas, wherein each of the code areas is placed between two buried bit lines. Next, a second dielectric layer having a plurality of contact plugs is formed on the semiconductor structure, wherein the contact plug comprises a second dielectric layer and a first glue layer, furthermore; the first glue layer is placed on the side-wall and bottom of the contact plugs. In addition, the contact plugs filled with the first metal layer. Then, a second glue layer, a second metal layer and a pad layer having an opening pattern are respectively formed on the second dielectric layer and contact plug. Thus, the processes of the present invention can improve the stability and accuracy in the electricity of the mask ROM device.

摘要翻译： 提供了掩模ROM器件的制造方法和结构。 首先，提供半导体结构，其包括第一介电层，多个掩埋位线和多个代码区域，其中每个代码区域被放置在两个掩埋位线之间。 接下来，在半导体结构上形成具有多个接触插塞的第二电介质层，其中，所述接触插塞还包括第二电介质层和第一胶合层; 第一胶层位于接触塞的侧壁和底部。 另外，填充有第一金属层的接触塞子。 然后，在第二电介质层和接触插塞上分别形成具有开口图案的第二胶合层，第二金属层和垫层。 因此，本发明的方法可以提高掩模ROM装置的电力的稳定性和精度。

公开(公告)号：US5907257A

公开(公告)日：1999-05-25

申请号：US853291

申请日：1997-05-09

申请人： Lawrence Liu ,  Michael A. Murray ,  Li-Chun Li

发明人： Lawrence Liu ,  Michael A. Murray ,  Li-Chun Li

IPC分类号： G05F1/46 ,  G05F1/10

CPC分类号： G05F1/468 ,  G05F1/465

摘要： A bias voltage generator generates the same bias voltage VBB for different external power supply voltages EVCC (for example, for EVCC=3.3V or 5.0V). During power-up, the charge pump that generates VBB is controlled by an enable signal ExtEn referenced to EVCC. Later an internal supply voltage IVCC becomes fully developed to a value independent from EVCC (for example, IVCC=3.0V), and the charge pump becomes controlled by an enable signal IntEn referenced to IVCC. This enable signal IntEn will cause VBB to reach its target value, for example, -1.5V. This target value is independent of EVCC. During power-up, when the charge pump is controlled by ExtEn, the bias voltage VBB is driven to an intermediate value (for example, -0.5V or -1V). This intermediate value depends on EVCC, but is below the target value in magnitude. The intermediate value reduces the likelihood of latch-up during power-up, but the intermediate value does not go beyond the target value thus does not create a significant pn-junction current leakage in semiconductor regions to which the bias voltage is applied.

摘要翻译： 偏置电压发生器为不同的外部电源电压EVCC产生相同的偏置电压VBB（例如，对于EVCC = 3.3V或5.0V）。 在上电期间，产生VBB的电荷泵由参考EVCC的使能信号ExtEn控制。 之后，内部电源电压IVCC完全发展为独立于EVCC（例如，IVCC = 3.0V）的值，并且电荷泵由参考IVCC的使能信号IntEn控制。 该启用信号IntEn将使VBB达到其目标值，例如-1.5V。 该目标值与EVCC无关。 在上电期间，当电荷泵由ExtEn控制时，偏置电压VBB被驱动到中间值（例如，-0.5V或-1V）。 该中间值取决于EVCC，但是在大小上低于目标值。 中间值降低了在上电期间闭锁的可能性，但是中间值不超过目标值，因此在施加偏置电压的半导体区域中不会产生显着的pn结电流泄漏。

公开(公告)号：US5768200A

公开(公告)日：1998-06-16

申请号：US760121

申请日：1996-12-03

申请人： Lawrence Liu ,  Michael Murray ,  Li-Chun Li

发明人： Lawrence Liu ,  Michael Murray ,  Li-Chun Li

IPC分类号： G11C7/06 ,  G11C11/4091 ,  G11C7/00

CPC分类号： G11C11/4091 ,  G11C7/06 ,  G11C7/065

摘要： A sense amplifier charging circuit can work with different power supply voltages (EVCC). When EVCC is high, a signal generated from EVCC disables some of the charging transistors to reduce the circuit noise. When EVCC is low, the signal generated from EVCC enables the transistors thus increasing the circuit speed.

摘要翻译： 读出放大器充电电路可以工作在不同的电源电压（EVCC）。 当EVCC为高电平时，从EVCC产生的信号禁止某些充电晶体管降低电路噪声。 当EVCC为低电平时，从EVCC产生的信号使得晶体管能够提高电路速度。

公开(公告)号：US5767737A

公开(公告)日：1998-06-16

申请号：US695058

申请日：1996-08-09

申请人： Lawrence Liu ,  Michael Murray ,  Li-Chun Li

发明人： Lawrence Liu ,  Michael Murray ,  Li-Chun Li

IPC分类号： G11C7/06 ,  G05F1/10

CPC分类号： G11C7/06

摘要： A dynamic random access memory generates an internal power supply voltage IVCC. IVCC is lower in magnitude than the external power supply voltage EVCC. During a read operation, the sense amplifiers are powered from EVCC while the bit lines charge to their output levels. Then the sense amplifiers stop being powered from EVCC and begin being powered from IVCC to maintain the bit lines at their output levels. A timer defines the time that the sense amplifiers are powered from EVCC. This time depends inversely on EVCC. The timer includes a transistor connected between EVCC and an input of the inverter. The time that the sense amplifiers are powered from EVCC is defined by the time that the input of the inverter charges to the trip point of the inverter.

摘要翻译： 动态随机存取存储器产生内部电源电压IVCC。 IVCC的幅度小于外部电源电压EVCC。 在读操作期间，读出放大器由EVCC供电，同时位线充电到其输出电平。 然后，感测放大器停止从EVCC供电，并开始从IVCC供电，以将位线保持在其输出电平。 定时器定义了感测放大器从EVCC供电的时间。 这一次与EVCC相反。 定时器包括连接在EVCC和反相器的输入端之间的晶体管。 读出放大器由EVCC供电的时间由变频器的输入充电到变频器的跳变点的时间决定。