公开(公告)号：US5935705A

公开(公告)日：1999-08-10

申请号：US950662

申请日：1997-10-15

Applicant: Li-Chyong Chen ,  Kuei-Hsien Chen ,  Dhananjay Manohar Bhusari ,  Yang-Fang Chen ,  Ying-Sheng Huang

Inventor： Li-Chyong Chen ,  Kuei-Hsien Chen ,  Dhananjay Manohar Bhusari ,  Yang-Fang Chen ,  Ying-Sheng Huang

IPC: C23C16/36 ,  H01L31/00 ,  B32B9/00 ,  C01B33/00 ,  C23C16/00

CPC classification number: C23C16/36 ,  Y10T428/2918

Abstract: The present invention provides a novel crystalline material Si.sub.x C.sub.y N.sub.z possessing a direct optical band gap of 3.8 eV. Many optoelectronic applications, such as blue light emitting diode and laser diode, may utilize this property.

Abstract translation: 本发明提供了具有3.8eV的直接光学带隙的新型结晶材料SixCyNz。 许多光电应用，例如蓝色发光二极管和激光二极管，可以利用这种性质。