公开(公告)号：US20240385508A1

公开(公告)日：2024-11-21

申请号：US18695933

申请日：2022-09-27

Applicant: LINTEC OF AMERICA, INC.

Inventor： Marcio D. LIMA ,  Takahiro UEDA

IPC: G03F1/62

Abstract: A filtration formed nanostructure pellicle film is disclosed. The filtration formed nanostructure pellicle film includes a plurality of carbon nanofibers that are intersected randomly to form an interconnected network structure in a planar orientation with enhanced properties by plasma treatment. The interconnected structure allows for a high minimum EUV transmission rate of at least 92%, with a thickness ranging from a lower limit of 3 nm to an upper limit of 100 nm, to allow for effective EUV lithography processing.

公开(公告)号：US20230095318A1

公开(公告)日：2023-03-30

申请号：US18074082

申请日：2022-12-02

Applicant: LINTEC OF AMERICA, INC.

Inventor： Marcio D. LIMA ,  Takahiro UEDA

IPC: G03F1/22 ,  G03F1/64 ,  G03F7/20

Abstract: A filtration formed nanostructure pellicle film is disclosed. The filtration formed nanostructure pellicle film includes a plurality of carbon nanofibers that are intersected randomly to form an interconnected network structure in a planar orientation. The interconnected structure allows for a high minimum EUV transmission rate of at least 92%, with a thickness ranging from a lower limit of 3 nm to an upper limit of 100 nm, to allow for effective EUV lithography processing.

公开(公告)号：US20220144641A1

公开(公告)日：2022-05-12

申请号：US17605753

申请日：2020-05-26

Applicant: LINTEC OF AMERICA, INC.

Inventor： Marcio D. LIMA

IPC: C01B32/158 ,  C01B32/159 ,  B32B5/12 ,  B32B7/022

Abstract: Nanofiber membranes are described that include multiple layers of nanofiber structures, where each structure is a composite composition of multiwall carbon nanotubes and one or both of single wall and/or few walled carbon nanotubes. By selecting the relative proportions of multiwall and one or more of single/few wall carbon nanotubes in a nanofiber film, the membrane can be fabricated to withstand the heating that occurs during operation in an EUV lithography machine, while also having enough mechanical integrity to withstand pressure changes of between 1 atmosphere (atm) and 2 atm between operating cycles of an EUV lithography machine.