ULTRA-THIN, ULTRA-LOW DENSITY FILMS FOR EUV LITHOGRAPHY

    公开(公告)号:US20240419062A1

    公开(公告)日:2024-12-19

    申请号:US18816681

    申请日:2024-08-27

    Abstract: A filtration formed nanostructure pellicle film is disclosed. The filtration formed nanostructure pellicle film includes a plurality of carbon nanofibers that are intersected randomly to form an interconnected network structure in a planar orientation. The interconnected structure allows for a high minimum EUV transmission rate of at least 92%, with a thickness ranging from a lower limit of 3 nm to an upper limit of 100 nm, to allow for effective EUV lithography processing.

    NANOFIBER FILM TENSION CONTROL
    4.
    发明公开

    公开(公告)号:US20230341764A1

    公开(公告)日:2023-10-26

    申请号:US18026722

    申请日:2021-09-16

    CPC classification number: G03F1/64

    Abstract: An apparatus and method are described herein for providing tension to carbon nanotube films. An apparatus and method are described herein for transferring carbon nanotube films from a first frame to a second frame. An example method includes deforming a frame by one of a thermal method or a physical method, allowing the frame to return to an original shape, and providing tension to the carbon nanotube film.

    ZIRCONIUM-COATED ULTRA-THIN, ULTRA-LOW DENSITY FILMS FOR EUV LITHOGRAPHY

    公开(公告)号:US20250004363A1

    公开(公告)日:2025-01-02

    申请号:US18695930

    申请日:2022-09-27

    Abstract: A filtration formed nanostructure pellicle film with an ultra-thin zirconium coating is disclosed. The filtration formed nanostructure pellicle film includes a plurality of nanotubes that are intersected randomly to form an interconnected network structure in a planar orientation with enhanced properties, and a zirconium-coated layer. The coated interconnected structure with the zirconium-coated layer allows for a high minimum EUV transmission rate of at least 88%. The interconnected network structure has a thickness ranging from a lower limit of 3 nm to an upper limit of 100 nm, to allow for effective EUV lithography processing.

    ENHANCED ULTRA-THIN, ULTRA-LOW DENSITY FILMS FOR EUV LITHOGRAPHY AND METHOD OF PRODUCING THEREOF

    公开(公告)号:US20240385508A1

    公开(公告)日:2024-11-21

    申请号:US18695933

    申请日:2022-09-27

    Abstract: A filtration formed nanostructure pellicle film is disclosed. The filtration formed nanostructure pellicle film includes a plurality of carbon nanofibers that are intersected randomly to form an interconnected network structure in a planar orientation with enhanced properties by plasma treatment. The interconnected structure allows for a high minimum EUV transmission rate of at least 92%, with a thickness ranging from a lower limit of 3 nm to an upper limit of 100 nm, to allow for effective EUV lithography processing.

    ULTRA-THIN, ULTRA-LOW DENSITY FILMS FOR EUV LITHOGRAPHY

    公开(公告)号:US20230095318A1

    公开(公告)日:2023-03-30

    申请号:US18074082

    申请日:2022-12-02

    Abstract: A filtration formed nanostructure pellicle film is disclosed. The filtration formed nanostructure pellicle film includes a plurality of carbon nanofibers that are intersected randomly to form an interconnected network structure in a planar orientation. The interconnected structure allows for a high minimum EUV transmission rate of at least 92%, with a thickness ranging from a lower limit of 3 nm to an upper limit of 100 nm, to allow for effective EUV lithography processing.

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