公开(公告)号：US11638379B2

公开(公告)日：2023-04-25

申请号：US17511829

申请日：2021-10-27

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Min-Feng Hung ,  Chia-Jung Chiu ,  Guan-Ru Lee

IPC: H10B43/20 ,  H01L29/417 ,  H01L21/762

Abstract: A method for forming a memory device is provided. The memory device includes a substrate; a stack including a plurality of conductive layers and a plurality of insulating layers being alternatively stacked on the substrate; a plurality of memory structures formed on the substrate and penetrating the stack; a plurality of isolation structures formed on the substrate and penetrating the stack, wherein the isolation structures dividing the memory structures into a plurality of first memory structures and a plurality of second memory structures; and a plurality of common source pillars formed on the substrate and penetrating the stack, wherein the common source pillars directly contact the isolation structures.