公开(公告)号：US20020072140A1

公开(公告)日：2002-06-13

申请号：US09733688

申请日：2000-12-08

申请人： Motorola, Inc.

发明人： Jeffrey M. Finder ,  William J. Ooms

IPC分类号： H01L021/00

CPC分类号： H01L31/035245 ,  B82Y20/00 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/31691 ,  H01L31/0368 ,  H01L31/101 ,  Y02E10/50

摘要： High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (204) on a silicon wafer (202). The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (206) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. Quantum well infrared photodetectors (200) can be grown on the high quality epitaxial monocrystalline material formed on such compliant substrates to create highly reliable devices having reduced costs.

摘要翻译： 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 实现顺应性衬底的形成的一种方法包括首先在硅晶片（202）上生长容纳缓冲层（204）。 容纳缓冲层是通过氧化硅的非晶界面层（206）与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆单晶层两者晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 量子阱红外光电探测器（200）可以在形成于这种柔性衬底上的高质量外延单晶材料上生长，从而产生具有降低成本的高度可靠的器件。