公开(公告)号：US20050254292A1

公开(公告)日：2005-11-17

申请号：US10843787

申请日：2004-05-11

申请人： Thomas Anthony ,  Frederick Perner ,  Heon Lee ,  Robert Walmsley

发明人： Thomas Anthony ,  Frederick Perner ,  Heon Lee ,  Robert Walmsley

IPC分类号： G11C11/14 ,  G11C11/16

CPC分类号： G11C11/16 ,  G11C11/1675

摘要： The present invention provides a magnetic memory device that includes a magnetic memory cell switchable between two states by the application of a magnetic field wherein the magnetic field for such switching is dependent in part on a memory cell temperature. The device further includes at least one heater element proximate to the magnetic memory cell and series connected with the magnetic memory cell for heating of the magnetic memory cell. The device also includes a circuit for selectively applying the electrical current through the at least one heater element so as to heat the cell and facilitate cell state-switching.

摘要翻译： 本发明提供了一种磁存储器件，其包括通过施加磁场在两个状态之间切换的磁存储器单元，其中用于这种切换的磁场部分地取决于存储单元温度。 该装置还包括靠近磁存储器单元的至少一个加热器元件，并且与磁存储单元连接的用于加热磁存储单元的串联。 该装置还包括用于选择性地施加电流通过至少一个加热器元件以便加热电池并促进电池状态切换的电路。