摘要:
An apparatus that provides for non-destructive readback of a ferroelectric material. The apparatus can include a ferroelectric layer with a scannable surface wherein the ferroelectric layer has a compensation charge adjacent the scannable surface. The apparatus also can include an electrode adjacent the scannable surface to sense the compensation charge. A related method is also disclosed.
摘要:
An apparatus includes a storage medium, and a transducer positioned adjacent to the storage medium, wherein the transducer includes a first electrode and a second electrode, with the width of the first electrode being less than the width of the second electrode. A method including: applying a first voltage to a transducer to write data to a storage medium, and applying a second voltage to the transducer to read data from the storage medium, wherein the magnitude of the first voltage is greater than the magnitude of the second voltage.
摘要:
An apparatus that provides for non-destructive readback of a ferroelectric material. The apparatus can include a ferroelectric layer with a scannable surface wherein the ferroelectric layer has a compensation charge adjacent the scannable surface. The apparatus also can include an electrode adjacent the scannable surface to sense the compensation charge. A related method is also disclosed.
摘要:
An apparatus includes a storage medium, and a transducer positioned adjacent to the storage medium, wherein the transducer includes a first electrode and a second electrode, with the width of the first electrode being less than the width of the second electrode. A method including: applying a first voltage to a transducer to write data to a storage medium, and applying a second voltage to the transducer to read data from the storage medium, wherein the magnitude of the first voltage is greater than the magnitude of the second voltage.
摘要:
Method and apparatus for writing data to a magnetic memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In accordance with various embodiments, a write current is applied through a selected magnetic memory cell to initiate magnetic precession of the selected cell to a desired magnetic state. A field assist current is concurrently flowed through an adjacent memory cell to generate a magnetic field that assists in the precession of the selected cell to the desired magnetic state.
摘要:
Method and apparatus for writing data to a magnetic memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In accordance with various embodiments, a write current is applied through a selected magnetic memory cell to initiate magnetic precession of the selected cell to a desired magnetic state. A field assist current is concurrently flowed through an adjacent memory cell to generate a magnetic field that assists in the precession of the selected cell to the desired magnetic state.