Probe head with narrow read element
    12.
    发明授权
    Probe head with narrow read element 有权
    探头具有窄读取元素

    公开(公告)号:US07903533B2

    公开(公告)日:2011-03-08

    申请号:US11738615

    申请日:2007-04-23

    IPC分类号: G11B9/00

    CPC分类号: G11B9/02

    摘要: An apparatus includes a storage medium, and a transducer positioned adjacent to the storage medium, wherein the transducer includes a first electrode and a second electrode, with the width of the first electrode being less than the width of the second electrode. A method including: applying a first voltage to a transducer to write data to a storage medium, and applying a second voltage to the transducer to read data from the storage medium, wherein the magnitude of the first voltage is greater than the magnitude of the second voltage.

    摘要翻译: 一种设备包括存储介质和邻近存储介质定位的换能器,其中换能器包括第一电极和第二电极,第一电极的宽度小于第二电极的宽度。 一种方法,包括:向换能器施加第一电压以将数据写入存储介质,以及向所述换能器施加第二电压以从所述存储介质读取数据,其中所述第一电压的幅度大于所述第二电压的幅度 电压。

    Probe Head With Narrow Read Element
    14.
    发明申请
    Probe Head With Narrow Read Element 有权
    探头与窄读元素

    公开(公告)号:US20080259779A1

    公开(公告)日:2008-10-23

    申请号:US11738615

    申请日:2007-04-23

    IPC分类号: G11B9/02

    CPC分类号: G11B9/02

    摘要: An apparatus includes a storage medium, and a transducer positioned adjacent to the storage medium, wherein the transducer includes a first electrode and a second electrode, with the width of the first electrode being less than the width of the second electrode. A method including: applying a first voltage to a transducer to write data to a storage medium, and applying a second voltage to the transducer to read data from the storage medium, wherein the magnitude of the first voltage is greater than the magnitude of the second voltage.

    摘要翻译: 一种设备包括存储介质和邻近存储介质定位的换能器,其中换能器包括第一电极和第二电极,第一电极的宽度小于第二电极的宽度。 一种方法,包括:向换能器施加第一电压以将数据写入存储介质,以及向所述换能器施加第二电压以从所述存储介质读取数据,其中所述第一电压的幅度大于所述第二电压的幅度 电压。

    Using a nearby cell to provide field assisted switching in a magnetic memory array
    15.
    发明授权
    Using a nearby cell to provide field assisted switching in a magnetic memory array 有权
    使用附近的单元格在磁存储器阵列中提供现场辅助切换

    公开(公告)号:US08830734B2

    公开(公告)日:2014-09-09

    申请号:US12950673

    申请日:2010-11-19

    IPC分类号: G11C11/00 G11C11/16

    CPC分类号: G11C11/1675 G11C11/16

    摘要: Method and apparatus for writing data to a magnetic memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In accordance with various embodiments, a write current is applied through a selected magnetic memory cell to initiate magnetic precession of the selected cell to a desired magnetic state. A field assist current is concurrently flowed through an adjacent memory cell to generate a magnetic field that assists in the precession of the selected cell to the desired magnetic state.

    摘要翻译: 将数据写入磁存储单元的方法和装置,例如自旋转矩传递随机存取存储器(STRAM)存储单元。 根据各种实施例,通过所选择的磁存储器单元施加写入电流,以将所选择的单元的磁性进动启动到期望的磁状态。 场辅助电流同时流过相邻的存储单元,以产生有助于所选择的单元进入所需磁状态的磁场。

    Using a Nearby Cell to Provide Field Assisted Switching in a Magnetic Memory Array
    16.
    发明申请
    Using a Nearby Cell to Provide Field Assisted Switching in a Magnetic Memory Array 有权
    使用附近的单元格提供磁存储器阵列中的场辅助切换

    公开(公告)号:US20120127785A1

    公开(公告)日:2012-05-24

    申请号:US12950673

    申请日:2010-11-19

    IPC分类号: G11C11/00

    CPC分类号: G11C11/1675 G11C11/16

    摘要: Method and apparatus for writing data to a magnetic memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In accordance with various embodiments, a write current is applied through a selected magnetic memory cell to initiate magnetic precession of the selected cell to a desired magnetic state. A field assist current is concurrently flowed through an adjacent memory cell to generate a magnetic field that assists in the precession of the selected cell to the desired magnetic state.

    摘要翻译: 将数据写入磁存储单元的方法和装置,例如自旋转矩传递随机存取存储器(STRAM)存储单元。 根据各种实施例,通过所选择的磁存储器单元施加写入电流,以将所选择的单元的磁性进动启动到期望的磁状态。 场辅助电流同时流过相邻的存储单元,以产生有助于所选择的单元进入所需磁状态的磁场。