公开(公告)号：US5269875A

公开(公告)日：1993-12-14

申请号：US825443

申请日：1992-01-24

申请人： Susumu Sonokawa ,  Kenji Araki ,  Atsushi Iwasaki ,  Masahiko Baba

发明人： Susumu Sonokawa ,  Kenji Araki ,  Atsushi Iwasaki ,  Masahiko Baba

IPC分类号： C30B15/00 ,  C30B15/14

CPC分类号： C30B29/06 ,  C30B15/00 ,  Y10T117/1008 ,  Y10T117/1072

摘要： Used in a Si crystal pulling apparatus using the Czochralski method, to lower the concentration of oxygen in the Si single crystal without increasing the production cost and to make the concentration substantially even all over the Si single crystal. The crystal 36 is produced by disposing a straightening tube 40 concentrically with and above a quartz crucible 22, letting inert gas flow down through the tube, dipping a seed crystal in Si molten liquid 28 in the quartz crucible and then pulling the seed crystal up. The concentration of oxygen in the Si single crystal is adjusted by controlling the distance H between the surface of the Si molten liquid and the bottom end of the straightening tube in accordance with the pull-up length Y or the pull-up time from a certain growth point of the crystal.

摘要翻译： 在使用Czochralski方法的Si晶体拉制装置中，为了降低Si单晶中的氧浓度而不增加制造成本，并且使Si的单晶的浓度基本上均匀。 晶体36通过与石英坩埚22同心地配置矫正管40，使惰性气体向下流过管，将晶种浸入石英坩埚中的Si熔融液28中，然后将晶种向上拉。 通过根据上拉长度Y或上拉时间从一定程度控制Si熔融液体的表面与矫直管的底端之间的距离H来调节Si单晶中的氧浓度 晶体的生长点。

公开(公告)号：US5170061A

公开(公告)日：1992-12-08

申请号：US693171

申请日：1991-04-29

申请人： Masahiko Baba

发明人： Masahiko Baba

IPC分类号： G01H9/00 ,  C30B15/20 ,  C30B15/26 ,  G06T1/00 ,  G06T7/60 ,  H01L21/208

CPC分类号： C30B15/26 ,  C30B15/20 ,  Y10T117/1004

摘要： A method and an apparatus for measuring oscillation of a melt surface in growing a single crystal by Czochralski process, particularly in growing and pulling a crystal neck portion having a small diameter of 2 to 5 mm. The image of a region where the single crystal is being grown by the Czochralski process is taken by a camera 38 and the outside diameter D.sub.o of a bright ring image 70 of a brightness not lower than a predetermined reference value E is detected in accordance with video signals produced by the camera (Steps 80-83). The amount of oscillation of the outside diameter D.sub.o is measured as the amount S.sub.v of oscillation of the melt surface near the region where the single crystal is grown. The reference value E is determined by multiplying the maximum value of the video signals in one field with a predetermined constant K. The constant K is a value which, when the velocity of pulling of the single crystal is fixed to zero, substantially maximizes the amount of S.sub.v of oscillation of the outside diameter D.sub.o.