公开(公告)号：US5269875A

公开(公告)日：1993-12-14

申请号：US825443

申请日：1992-01-24

申请人： Susumu Sonokawa ,  Kenji Araki ,  Atsushi Iwasaki ,  Masahiko Baba

发明人： Susumu Sonokawa ,  Kenji Araki ,  Atsushi Iwasaki ,  Masahiko Baba

IPC分类号： C30B15/00 ,  C30B15/14

CPC分类号： C30B29/06 ,  C30B15/00 ,  Y10T117/1008 ,  Y10T117/1072

摘要： Used in a Si crystal pulling apparatus using the Czochralski method, to lower the concentration of oxygen in the Si single crystal without increasing the production cost and to make the concentration substantially even all over the Si single crystal. The crystal 36 is produced by disposing a straightening tube 40 concentrically with and above a quartz crucible 22, letting inert gas flow down through the tube, dipping a seed crystal in Si molten liquid 28 in the quartz crucible and then pulling the seed crystal up. The concentration of oxygen in the Si single crystal is adjusted by controlling the distance H between the surface of the Si molten liquid and the bottom end of the straightening tube in accordance with the pull-up length Y or the pull-up time from a certain growth point of the crystal.

摘要翻译： 在使用Czochralski方法的Si晶体拉制装置中，为了降低Si单晶中的氧浓度而不增加制造成本，并且使Si的单晶的浓度基本上均匀。 晶体36通过与石英坩埚22同心地配置矫正管40，使惰性气体向下流过管，将晶种浸入石英坩埚中的Si熔融液28中，然后将晶种向上拉。 通过根据上拉长度Y或上拉时间从一定程度控制Si熔融液体的表面与矫直管的底端之间的距离H来调节Si单晶中的氧浓度 晶体的生长点。

公开(公告)号：US06228165B1

公开(公告)日：2001-05-08

申请号：US09362103

申请日：1999-07-28

申请人： Masahiko Baba ,  Scott Matthew Kirkland ,  Richard William Rudberg ,  Susumu Sonokawa ,  Darren Mark Taie ,  Akira Uchikawa

发明人： Masahiko Baba ,  Scott Matthew Kirkland ,  Richard William Rudberg ,  Susumu Sonokawa ,  Darren Mark Taie ,  Akira Uchikawa

IPC分类号： C30B1516

CPC分类号： C30B29/06 ,  C30B15/10

摘要： A method of manufacturing a crystal of silicon in accordance with a Czochralski method, includes the steps of applying an electric potential across a quartz crucible containing a silicon melt, and pulling a crystal of silicon from the silicon melt.

摘要翻译： 根据切克劳斯基法（Czochralski method）制造硅晶体的方法包括以下步骤：跨越含有硅熔体的石英坩埚施加电位，并从硅熔体中拉出硅晶体。

公开(公告)号：US5089238A

公开(公告)日：1992-02-18

申请号：US601096

申请日：1990-10-22

申请人： Kenji Araki ,  Akiho Maeda ,  Masahiko Baba

发明人： Kenji Araki ,  Akiho Maeda ,  Masahiko Baba

IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B15/26 ,  C30B29/06 ,  H01L21/208

CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/26 ,  Y10T117/1008

摘要： Used in an apparatus for pulling a Si single crystal 36 up from Si molten liquid 35 by using the Czochralski method. In order to produce a Si single crystal having a desired quality, the diameter of the Si single crystal is controlled by controlling the pull-up speed of the Si single crystal, the sum of a reference temperature set value T.sub.B (X), which is a function of a pull-up distance X of the Si single crystal from a certain growth point, and a value proportional to a diameter deviation .DELTA.D is regarded as a reference temperature, and electric power supplied to a heater (24) for heating the Si molten liquid is controlled so that the temperature of the vicinity of the heater is equal to the reference temperature. In order to easily and quickly set the temperature pattern, various operational data in producing a Si single crystal is automatically collected and stored in a magnetic memory disk (82) corresponding to quality data of the Si single crystals which have been produced, data similar to the quality of a Si single crystal to be produced is retrieved from the stored data, an operator selects the most similar data, the selected operational data is displayed in a display unit (80), and the operator sets the reference temperature pattern T.sub.B (X) on a screen of the display unit by using a mouse (78).

公开(公告)号：US5378900A

公开(公告)日：1995-01-03

申请号：US158849

申请日：1993-11-29

申请人： Yoshihiro Hirano ,  Masahiko Baba

发明人： Yoshihiro Hirano ,  Masahiko Baba

IPC分类号： C30B15/26 ,  C30B35/00 ,  G01B11/08 ,  G01B11/10 ,  G01N21/86

CPC分类号： G01B11/105 ,  Y10T117/1004

摘要： The growing portion of a single crystal 1 grown by the pull method is recorded and the image signal is output to a digitizing circuit 3 that converts the image signal into binary data. A memory device 4 stores the digitized images and the point P at the boundary between dark and light is detected by scanning the stored digitized images starting from the scanning-start pixel and proceeding in the direction parallel to the direction of single crystal pulling. The diameter D of the growing portion of the single crystal is determined based upon the boundary P, and the scanning-start pixel for the current operation is set at the pixel that is separated from the boundary Pb in the preceding operation by a preset number of pixels d in the opposite direction of the scan.

摘要翻译： 记录通过拉法生长的单晶1的生长部分，并将图像信号输出到将图像信号转换为二进制数据的数字化电路3。 存储装置4存储数字化图像，并且通过从扫描开始像素开始扫描存储的数字化图像并沿与单晶拉取方向平行的方向进行扫描来检测暗和光之间的边界处的点P. 基于边界P确定单晶生长部分的直径D，并且将当前操作的扫描开始像素设置在与先前操作中的边界Pb分离预定数量的像素 像素d在扫描的相反方向。

公开(公告)号：US5138179A

公开(公告)日：1992-08-11

申请号：US685587

申请日：1991-03-29

申请人： Masahiko Baba ,  Hiroshi Ohtsuna

发明人： Masahiko Baba ,  Hiroshi Ohtsuna

IPC分类号： C30B15/26 ,  G01B11/08

CPC分类号： C30B15/26 ,  G01B11/08

摘要： Disclosed are a method of and a device for crystal diameter measurement in an apparatus for automatically controlling single crystal growth by the CZ technique. In the diameter measurement method, a growing region of a single crystal 32 is photographed by a camera 38, and an outer diamter Do of a luminous ring image 70 having a luminance above a reference value E is detected from a video signal supplied from the camera 38, the diameter Do thus detected being used for crystal diameter control. The crystal diameter measuring device comprises: a camera 38 for photographing a growing section of a single crystal 32 and supplying a video signal; devices for detecting a maximum video signal value with respect to one scanning line or more; a device for obtaining a reference value E corresponding to the above-mentioned maximum value; devices for binary-coding the video signal in comparison with the reference value E; and a device for detecting the outer diameter Do of a luminous image from a binary image obtained by the binary-coding.

公开(公告)号：US4794263A

公开(公告)日：1988-12-27

申请号：US109722

申请日：1987-10-19

申请人： Nobuo Katsuoka ,  Yoshihiro Hirano ,  Atsushi Ozaki ,  Masahiko Baba

发明人： Nobuo Katsuoka ,  Yoshihiro Hirano ,  Atsushi Ozaki ,  Masahiko Baba

IPC分类号： C30B15/26 ,  G01B11/08 ,  H01L21/18

CPC分类号： G01B11/08 ,  Y10T117/1004 ,  Y10T117/1012

摘要： An apparatus for measuring the diameter of a crystal in which an optical sensor scans along a sensing line which crosses at one point a luminous ring formed at the interface between a crystalline rod and a melt; the picture element position corresponding to a maximum luminance is discriminated when the optical sensor scans; the mean value of the picture element position is calculated over at least one revolution of the crystalline rod; and the diameter D of the crystalline rod at a portion thereof interfacing with the melt is calculated from the mean value and the level of the melt. Similarly, the minimum crystal diameter can be calculated by obtaining the picture element position corresponding to the minimum crystal diameter instead of obtaining the mean of the picture element position.

摘要翻译： 一种用于测量晶体直径的装置，其中光学传感器沿着在结晶棒和熔体之间的界面处形成的发光环的一个点处的感测线扫描; 当光学传感器扫描时，判别对应于最大亮度的像素位置; 在结晶棒的至少一圈上计算像素位置的平均值; 并且根据熔融物的平均值和水平计算结晶棒在与熔体相接合的部分的直径D. 类似地，可以通过获得与最小晶体直径相对应的像素位置而不是获得像素位置的平均值来计算最小晶体直径。

公开(公告)号：US5183528A

公开(公告)日：1993-02-02

申请号：US661348

申请日：1991-02-28

申请人： Masahiko Baba ,  Hiroshi Ohtsuna

发明人： Masahiko Baba ,  Hiroshi Ohtsuna

IPC分类号： C30B15/20 ,  C30B15/22 ,  C30B15/26 ,  C30B29/06

CPC分类号： C30B15/22 ,  Y10T117/1008

摘要： A method for automatically controlling growing a single crystal neck portion by the CZ method, comprising the steps of pulling up a seed crystal (30) at 2 mm/min. for five minutes so as to grow a single crystal 32; next measuring a diameter of the lower end of the crystal; modifying an electric power for heating a melt based on the difference between the measured diameter and a reference value; waiting for five minutes; keeping the electric power constant for 10 minutes with controlling the pulling up speed so as to approach the diameter of the crystal to the reference value and with measuring the pulling up speed repeatedly; and next modifying the power based on the difference between the mean speed and a reference value. The last two steps are repeated alternatively.

公开(公告)号：US5129986A

公开(公告)日：1992-07-14

申请号：US614587

申请日：1990-11-16

申请人： Hidetoshi Seki ,  Seiichiro Ohtsuka ,  Masahiko Baba

发明人： Hidetoshi Seki ,  Seiichiro Ohtsuka ,  Masahiko Baba

IPC分类号： C30B15/20 ,  C30B15/00 ,  C30B29/06

CPC分类号： C30B29/06 ,  C30B15/00 ,  Y10T117/1008 ,  Y10T117/1032

摘要： A method for controlling a specific resistance of a single crystal in a Czochralski-method type single crystal pulling apparatus having a hermetical chamber in which the single crystal is pulled up from a polycrystal melt and an inert gas supply and exhaust system by means of which an inert gas is supplied to the hermetical chamber and exhausted therefrom; the method being characterized in that the pneumatic pressure in the hermetical chamber and the supply rate of the inert gas are controlled in accordance with a prepared control pattern with respect to the passage of pulling time.

公开(公告)号：US6030451A

公开(公告)日：2000-02-29

申请号：US5773

申请日：1998-01-12

申请人： Aaron LaBrie ,  Masahiko Baba

发明人： Aaron LaBrie ,  Masahiko Baba

IPC分类号： C30B15/26 ,  C30B15/22

CPC分类号： C30B15/26 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A method and apparatus for measuring and controlling the diameter of a silicon single crystal ingot grown by the Czochralski technique using dual optical cameras focused on diametrically opposed edges of the meniscus of the growing crystal to measure the actual crystal diameter. The crystal growth parameters can be adjusted in response to the measured diameter to maintain a constant, desired diameter. The method and apparatus of the invention provide a continuous accurate measurement of the crystal diameter and avoid unnecessary adjustments to the crystal growth conditions resulting from diameter measurement errors due to the effects of crystal orbit, melt level changes and camera angle variations.

摘要翻译： 一种用于测量和控制通过使用双光学照相机通过切克劳斯基技术生长的硅单晶锭的直径的方法和装置，其聚焦在生长晶体的弯月面的直径相对的边缘上以测量实际晶体直径。 可以响应于测量的直径来调节晶体生长参数以保持恒定的期望直径。 本发明的方法和装置提供了晶体直径的连续精确测量，并且避免了由于晶体轨道，熔体水平变化和相机角度变化的影响而导致的直径测量误差对晶体生长条件的不必要的调整。

公开(公告)号：US5240684A

公开(公告)日：1993-08-31

申请号：US736293

申请日：1991-07-29

申请人： Masahiko Baba ,  Hiroyuki Ibe

发明人： Masahiko Baba ,  Hiroyuki Ibe

IPC分类号： G01B11/08 ,  C30B15/26 ,  G01B11/10

CPC分类号： G01B11/10

摘要： A device for measuring the diameter of the growing portions of the single crystals grown by the Czochralski technique is provided. This device is capable of measuring the crystal diameter with a high degree of accuracy over a wide range from the small-diameter portion thereof to the large diameter portion. A one-dimensional camera 28 and a two-dimensional camera 48 are fixed to a shoulder chamber 34 in such a manner that the optical axes thereof are parallel to each other. An optical path switch-over device, consisting of a cylinder 56, a movable plane mirror 52 mounted on a cylinder rod, and a fixed plane mirror 54, is provided. When the diameter of a neck portion of the single crystal 20 having a diameter of 10 mm or less is measured, the light reflected by the plane mirrors 52 and 54 is made incident on the two-dimensional camera 48, and the diameter of a bright ring 27 is measured on the basis of the image obtained by the two-dimensional camera. To measure the diameter of the conical and cylindrical portions 24 and 26 having a diameter of 10 mm or more, an image of a line lying across the bright ring 27 is obtained by the one-dimensional camera 28 by retracting the plane mirror 52, and the diameter of the bright ring 27 is measured.