公开(公告)号：US20120118068A1

公开(公告)日：2012-05-17

申请号：US13386712

申请日：2010-07-12

申请人： Nobuyuki Yamada ,  Masahiro Sakuragi ,  Takeshi Yoshida ,  Kei Hayashi

发明人： Nobuyuki Yamada ,  Masahiro Sakuragi ,  Takeshi Yoshida ,  Kei Hayashi

IPC分类号： G01L9/02 ,  H01L21/28 ,  H01L29/84

CPC分类号： G01L9/0051 ,  G01L9/0042 ,  G01L9/008 ,  G01L9/06 ,  G01L27/007 ,  Y10T29/49002

摘要： A semiconductor pressure sensor (720) includes a thin film piezoelectric element (701) which applies strain to a portion of a semiconductor substrate that corresponds to a thin region (402). The thin film piezoelectric element (701) is formed at a distance away from diffusion resistors (406, 408, 410, and 412) functioning as strain gauges and is extended to the proximity of a bonding pad (716A) connected to an upper electrode layer of the thin film piezoelectric element and a bonding pad (716F) connected to a lower electrode thereof. The diffusion resistors (406, 408, 410, and 412) constitute a bridge circuit by metal wiring (722) and diffusion wiring (724). During self-diagnosis, a prescribed voltage is applied to a thin film piezoelectric element (701). If the output difference of the bridge circuit between before and after the voltage application falls outside a prescribed range, it is determined that a breakage occurs in the semiconductor pressure sensor (720).

摘要翻译： 半导体压力传感器（720）包括薄膜压电元件（701），该薄膜压电元件对与薄区域（402）对应的半导体衬底的一部分施加应变。 薄膜压电元件（701）形成为远离用作应变计的扩散电阻器（406,408,410和412）的一定距离，并且延伸到接合焊盘（716A）附近的上电极层 的薄膜压电元件和连接到其下电极的接合焊盘（716F）。 扩散电阻器（406,408,410和412）通过金属布线（722）和扩散布线（724）构成桥接电路。 在自诊断期间，向薄膜压电元件（701）施加规定的电压。 如果电压施加之前和之后的桥接电路的输出差超出规定范围，则确定在半导体压力传感器（720）中发生断线。