-
公开(公告)号:US20240144985A1
公开(公告)日:2024-05-02
申请号:US18386518
申请日:2023-11-02
Applicant: Micron Technology, Inc.
Inventor: Erik V. Pohlmann
CPC classification number: G11C7/1093 , G11C7/1063 , G11C7/1066 , G11C8/18
Abstract: Methods, systems, and devices for dynamic random access memory speed bin compatibility are described. For instance, a device (e.g., a memory device, a host device) may combine a first parameter with a second parameter to generate a third parameter, where the first parameter may be associated with a duration for a clock that is coupled with a memory array to perform a clock cycle and the second parameter may be associated with a timing constraint associated with initiating an access operation for the memory array. The device may determine a latency of a column address strobe based on the third parameter relative to (e.g., satisfying) a threshold value and may access one or more memory cells of the memory array based on the latency of the column address strobe.
-
公开(公告)号:US20230367709A1
公开(公告)日:2023-11-16
申请号:US18144655
申请日:2023-05-08
Applicant: Micron Technology, Inc.
Inventor: Sujeet V. Ayyapureddi , Scott E. Smith , Matthew A. Prather , Erik V. Pohlmann
CPC classification number: G06F12/06 , G06F11/0727 , G06F2212/1032
Abstract: Methods, systems, and devices for write command timing enhancement are described. A host device may transmit (e.g., issue), to a memory device, an activation command and an associated write command according to a delay that is different (e.g., shorter) than a row access to column access delay associated with read commands. In some examples, the delay between the activation command and the associated write command may be a function of the row access to column access delay associated with read commands and one or more additional parameters, such as a timing constraint or a speed parameter of the memory device.
-
公开(公告)号:US20220246188A1
公开(公告)日:2022-08-04
申请号:US17649006
申请日:2022-01-26
Applicant: Micron Technology, Inc.
Inventor: Erik V. Pohlmann , Neal J. Koyle
Abstract: Methods, systems, and devices for memory clock management and estimation procedures are described. A host device may determine a quantity of clock cycles associated with a duration for accessing a memory cell of a memory array based on truncating a value of a first parameter associated with another duration for a clock to perform a clock cycle. The host device may estimate a value of a second parameter related to (e.g., inversely proportional) to the truncated value of the first parameter and related to (e.g., directly proportional) to a correction factor, and may adjust (e.g., truncate) a third parameter to determine the quantity of clock cycles. Additionally or alternatively, the host device may adjust (e.g., perform a ceiling operation on) the second parameter to determine the quantity of clock cycles. The host device may access the memory cell based on the quantity of clock cycles.
-
-