公开(公告)号：US10692547B2

公开(公告)日：2020-06-23

申请号：US16746613

申请日：2020-01-17

Applicant: Micron Technology, Inc.

Inventor： Mahdi Jamali ,  William A. Melton ,  Daniele Vimercati ,  Xinwei Guo ,  Yasuko Hattori

IPC: G11C7/06 ,  G11C7/08 ,  G11C11/4091 ,  G11C11/22

Abstract: Methods, systems, and devices for self-referencing sensing schemes with coupling capacitance are described. A sense component of a memory device may include a capacitive coupling between two nodes of the sense component. The capacitive coupling may, in some examples, be provided by a capacitive element of the sense component or an intrinsic capacitance between features of the sense component. An example of a method employing such a sense component for detecting a logic state stored by a memory cell may include generating a first sense signal at one of the nodes while the node is coupled with the memory cell, and generating a second sense signal at the other of the nodes while the other node is coupled with the memory cell. The sense signals may be based at least in part on the capacitive coupling between the two nodes.

公开(公告)号：US20200013437A1

公开(公告)日：2020-01-09

申请号：US16512963

申请日：2019-07-16

Applicant: Micron Technology, Inc.

Inventor： Mahdi Jamali ,  William A. Melton ,  Daniele Vimercati ,  Xinwei Guo ,  Yasuko Hattori

IPC: G11C7/06

Abstract: Methods, systems, and devices for self-referencing sensing schemes with coupling capacitance are described. A sense component of a memory device may include a capacitive coupling between two nodes of the sense component. The capacitive coupling may, in some examples, be provided by a capacitive element of the sense component or an intrinsic capacitance between features of the sense component. An example of a method employing such a sense component for detecting a logic state stored by a memory cell may include generating a first sense signal at one of the nodes while the node is coupled with the memory cell, and generating a second sense signal at the other of the nodes while the other node is coupled with the memory cell. The sense signals may be based at least in part on the capacitive coupling between the two nodes.