公开(公告)号：US20230067814A1

公开(公告)日：2023-03-02

申请号：US17447505

申请日：2021-09-13

Applicant: Micron Technology, Inc.

Inventor： Raja Kumar Varma Manthena ,  Paolo Tessariol

IPC: H01L21/768 ,  H01L27/11551 ,  H01L27/11578 ,  H01L29/06 ,  H01L23/522 ,  H01L23/528 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11524

Abstract: A method of forming a microelectronic device comprises forming a stack structure over a source structure, forming pillar structures vertically extending through the stack structure, and forming at least one trench vertically extending through the stack structure. The at least one trench defines at least one stadium structure comprising opposing stair step structures having steps comprising horizontal ends of tiers. Additional trenches may be formed to vertically extend through the stack structure, and at least one further trench may be formed to vertically extend through the stack structure. The at least one further trench defines at least one additional stadium structure comprising additional opposing stair step structures having additional steps comprising additional horizontal ends of the tiers. A dielectric material may be formed within the at least one trench, the additional trenches, and the at least one further trench. Microelectronic devices, memory devices, and electronic systems are also described.

公开(公告)号：US11437391B2

公开(公告)日：2022-09-06

申请号：US16921192

申请日：2020-07-06

Applicant: Micron Technology, Inc.

Inventor： Raja Kumar Varma Manthena ,  Anilkumar Chandolu

IPC: H01L27/11565 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11582 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11529

Abstract: A method of forming a microelectronic device comprises forming a stack structure. Pillar structures are formed to vertically extend through the stack structure. At least one trench and additional trenches are formed to substantially vertically extend through the stack structure. Each of the additional trenches comprises a first portion having a first width, and a second portion at a horizontal boundary of the first portion and having a second width greater than the first width. A dielectric structure is formed within the at least one trench and the additional trenches. The dielectric structure comprises at least one angled portion proximate the horizontal boundary of the first portion of at least some of the additional trenches. The at least one angled portion extends at an acute angle to each of a first direction and a second direction transverse to the first direction. Microelectronic devices and electronic systems are also described.