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公开(公告)号:US20220310642A1
公开(公告)日:2022-09-29
申请号:US17211580
申请日:2021-03-24
Applicant: Micron Technology, Inc.
Inventor: Shuangqiang Luo , Dong Wang , Rui Zhang , Da Xing , Xiao Li , Pei Qiong Cheung , Xiao Zeng
IPC: H01L27/11582 , H01L27/11556 , H01L27/11526 , H01L27/11573
Abstract: Some embodiments include an assembly having conductive structures distributed along a level within a memory array region and another region proximate the memory array region. The conductive structures include a first stack over a metal-containing region. A semiconductor material is within the first stack. A second stack is over the conductive structures, and includes alternating conductive tiers and insulative tiers. Cell-material-pillars are within the memory array region. The cell-material-pillars include channel material. The semiconductor material directly contacts the channel material. Conductive post structures are within the other region. Some of the conductive post structures are dummy structures and have bottom surfaces which are entirely along an insulative oxide material. Others of the conductive post structures are live posts electrically coupled with CMOS circuitry. Some embodiments include methods of forming assemblies.
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公开(公告)号:US20220039230A1
公开(公告)日:2022-02-03
申请号:US17505304
申请日:2021-10-19
Applicant: Micron Technology, Inc.
Inventor: Anil Tipirneni , Rui Zhang
IPC: H05B45/20
Abstract: A lighting system includes a solid state lighting device capable of generating mixed light and a controller. The solid state lighting device includes light sources for producing mixed light and a sensor configured to detect light from one of the light sources. The controller controls two or more of the light sources based on output from the sensor. The controller can communicate with the sensor to provide closed-loop control.
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公开(公告)号:US11723127B2
公开(公告)日:2023-08-08
申请号:US17505304
申请日:2021-10-19
Applicant: Micron Technology, Inc.
Inventor: Anil Tipirneni , Rui Zhang
IPC: H05B45/22 , H05B47/105 , H05B45/20
CPC classification number: H05B45/20
Abstract: A lighting system includes a solid state lighting device capable of generating mixed light and a controller. The solid state lighting device includes light sources for producing mixed light and a sensor configured to detect light from one of the light sources. The controller controls two or more of the light sources based on output from the sensor. The controller can communicate with the sensor to provide closed-loop control.
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公开(公告)号:US11184964B2
公开(公告)日:2021-11-23
申请号:US16730944
申请日:2019-12-30
Applicant: Micron Technology, Inc.
Inventor: Anil Tipirneni , Rui Zhang
Abstract: A lighting system includes a solid state lighting device capable of generating mixed light and a controller. The solid state lighting device includes light sources for producing mixed light and a sensor configured to detect light from one of the light sources. The controller controls two or more of the light sources based on output from the sensor. The controller can communicate with the sensor to provide closed-loop control.
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公开(公告)号:US12058789B2
公开(公告)日:2024-08-06
申请号:US18335885
申请日:2023-06-15
Applicant: Micron Technology, Inc.
Inventor: Anil Tipirneni , Rui Zhang
CPC classification number: H05B45/20
Abstract: A lighting system includes a solid state lighting device capable of generating mixed light and a controller. The solid state lighting device includes light sources for producing mixed light and a sensor configured to detect light from one of the light sources. The controller controls two or more of the light sources based on output from the sensor. The controller can communicate with the sensor to provide closed-loop control.
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公开(公告)号:US20230137958A1
公开(公告)日:2023-05-04
申请号:US17517355
申请日:2021-11-02
Applicant: Micron Technology, Inc.
Inventor: Shuangqiang Luo , Nancy M. Lomeli , Rui Zhang
IPC: H01L23/528 , H01L27/11519 , H01L27/11524 , H01L27/11556 , H01L27/11565 , H01L27/1157 , H01L27/11582 , H01L23/522 , H01L21/768
Abstract: Memory circuitry comprising strings of memory cells comprising laterally-spaced memory blocks individually comprise a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers in a memory-array region. The insulative tiers and the conductive tiers of the laterally-spaced memory blocks extend from the memory-array region into a stair-step region. Individual stairs in the stair-step region comprise one of the conductive tiers and a riser. Conductive vias are individually directly against conductive material that is in the one conductive tier in one of the individual stairs. Individual of the conductive vias where directly against the conductive material are horizontally-longitudinally-elongated at an angle of 0° to 60° horizontally from the riser of the one individual stair. Other embodiments, including method, are disclosed.
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