Semiconductor laser device, semiconductor laser module, rare-earth-element-doped optical fiber amplifier and fiber laser
    11.
    发明授权
    Semiconductor laser device, semiconductor laser module, rare-earth-element-doped optical fiber amplifier and fiber laser 有权
    半导体激光器件,半导体激光器模块,稀土元素掺杂光纤放大器和光纤激光器

    公开(公告)号:US06477191B1

    公开(公告)日:2002-11-05

    申请号:US09538728

    申请日:2000-03-30

    IPC分类号: H01S500

    CPC分类号: H01S5/12

    摘要: A semiconductor laser device includes: an active layer; upper waveguide layers and a lower waveguide layer sandwiching the active layer therebetween; upper and lower cladding layers sandwiching the active layer and the upper and lower waveguide layers therebetween; and a current-narrowing layer defining a current-injection region for injecting current to the active layer, wherein a diffraction grating having a periodical structure in a resonance cavity direction is buried in any one of the waveguide layers, the diffraction grating being present in at least a part of the current-injection region; and the waveguide layer in which the diffraction grating is buried and the cladding layer adjoining to that waveguide layer forms an interface which is substantially flat in the resonance cavity direction. With the constitution, a waveguide structure which has a diffraction grating offering a higher flexibility in design and manufacture in terms of the coupling efficiency is realized, thereby easily providing a dynamic single-mode semiconductor laser device with higher reproducibility, yield and reliability.

    摘要翻译: 半导体激光器件包括:有源层; 上波导层和夹在其间的有源层的下波导层; 夹层有源层和上下波导层的上下包层; 以及限定用于向有源层注入电流的电流注入区域的电流变窄层,其中在谐振腔方向上具有周期性结构的衍射光栅被掩埋在任何一个波导层中,衍射光栅存在于 电流注入区域的至少一部分; 并且其中掩埋衍射光栅的波导层和与该波导层相邻的包层形成在谐振腔方向上基本上平坦的界面。 利用该结构,实现了在耦合效率方面具有在设计和制造中具有较高灵活性的衍射光栅的波导结构,由此容易地提供具有更高再现性,产率和可靠性的动态单模半导体激光器件。