公开(公告)号：US06477191B1

公开(公告)日：2002-11-05

申请号：US09538728

申请日：2000-03-30

申请人： Satoru Okada ,  Tsuyoshi Fujimoto ,  Yasuo Oeda

发明人： Satoru Okada ,  Tsuyoshi Fujimoto ,  Yasuo Oeda

IPC分类号： H01S500

CPC分类号： H01S5/12

摘要： A semiconductor laser device includes: an active layer; upper waveguide layers and a lower waveguide layer sandwiching the active layer therebetween; upper and lower cladding layers sandwiching the active layer and the upper and lower waveguide layers therebetween; and a current-narrowing layer defining a current-injection region for injecting current to the active layer, wherein a diffraction grating having a periodical structure in a resonance cavity direction is buried in any one of the waveguide layers, the diffraction grating being present in at least a part of the current-injection region; and the waveguide layer in which the diffraction grating is buried and the cladding layer adjoining to that waveguide layer forms an interface which is substantially flat in the resonance cavity direction. With the constitution, a waveguide structure which has a diffraction grating offering a higher flexibility in design and manufacture in terms of the coupling efficiency is realized, thereby easily providing a dynamic single-mode semiconductor laser device with higher reproducibility, yield and reliability.

摘要翻译： 半导体激光器件包括：有源层; 上波导层和夹在其间的有源层的下波导层; 夹层有源层和上下波导层的上下包层; 以及限定用于向有源层注入电流的电流注入区域的电流变窄层，其中在谐振腔方向上具有周期性结构的衍射光栅被掩埋在任何一个波导层中，衍射光栅存在于 电流注入区域的至少一部分; 并且其中掩埋衍射光栅的波导层和与该波导层相邻的包层形成在谐振腔方向上基本上平坦的界面。 利用该结构，实现了在耦合效率方面具有在设计和制造中具有较高灵活性的衍射光栅的波导结构，由此容易地提供具有更高再现性，产率和可靠性的动态单模半导体激光器件。

公开(公告)号：US06546032B1

公开(公告)日：2003-04-08

申请号：US09644080

申请日：2000-08-23

申请人： Yasuo Oeda ,  Satoru Okada ,  Kouichi Igarashi ,  Yumi Naito ,  Kiyofumi Muro ,  Takeshi Koiso ,  Yoshikazu Yamada ,  Atsushi Okubo ,  Tsuyoshi Fujimoto

发明人： Yasuo Oeda ,  Satoru Okada ,  Kouichi Igarashi ,  Yumi Naito ,  Kiyofumi Muro ,  Takeshi Koiso ,  Yoshikazu Yamada ,  Atsushi Okubo ,  Tsuyoshi Fujimoto

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/34313 ,  H01S5/34353

摘要： On a substrate of n-type GaAs are sequentially formed an n-type cladding layer (AlGaAs, Al content x=0.07, thickness t=2.86 &mgr;m), an n-type optical waveguide layer (GaAs, t=0.49 &mgr;m), an n-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), an active layer (composed of an In0.18Ga0.82As quantum well layer and a GaAs barrier layer), a p-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), a p-type optical waveguide layer (GaAs, t=0.49 &mgr;m), a p-type cladding layer (AlGaAs, x=0.20, t=1.08 &mgr;m), and a p-type cap layer (GaAs) in which a pair of n-type current blocking layers (GaAs) are buried. With this construction, the occurrence of a wavelength spit due to a higher-order mode can be inhibited thereby stabilizing a higher power operation.

摘要翻译： 在n型GaAs衬底上依次形成n型覆层（AlGaAs，Al含量x = 0.07，厚度t =2.86μm），n型光波导层（GaAs，t =0.49μm）， n型载流子阻挡层（AlGaAs，x = 0.40，t =0.03μm），有源层（由In0.18Ga0.82As量子阱层和GaAs势垒层构成），p型载流子阻挡层（AlGaAs ，p型光波导层（GaAs，t =0.49μm），p型覆层（AlGaAs，x = 0.20，t =1.08μm），p型光波导层 封装了一对n型电流阻挡层（GaAs）的封装层（GaAs）。 利用这种结构，可以抑制由高阶模式引起的波长吐出的发生，从而稳定高功率操作。

公开(公告)号：US06175582B1

公开(公告)日：2001-01-16

申请号：US09199435

申请日：1998-11-25

申请人： Yumi Naito ,  Yasuo Oeda ,  Tsuyoshi Fujimoto

发明人： Yumi Naito ,  Yasuo Oeda ,  Tsuyoshi Fujimoto

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/3213 ,  H01S5/3432

摘要： Optical guide layers are formed on both faces of the active layer, respectively, which optical guide layers have a band gap wider than that of the active layer, an n-type cladding layer and a p-type cladding layer respectively formed so as to sandwich the active layer and the optical guide layers therebetween, which cladding layers have a band gap wider than those of the optical guide layers, and carrier blocking layers are respectively formed between the active layer and the optical guide layers, which carrier blocking layers have a band gap wider than those of the active layer and the optical guide layers. The refractive index of the p-type cladding layer is lower than that of the n-type cladding layer. With such constitution inner losses are limited to a low level, as free carrier absorption is reduced, and the electric and thermal resistances of a semiconductor laser device are reduced, with the result that the laser device is enhanced in efficiency and output power.

摘要翻译： 导光层分别形成在有源层的两个表面上，这些导光层的带隙宽于有源层，n型包覆层和p型覆层分别形成为夹层 其间的有源层和导光层分别形成在该有源层与导光层之间的这些包层具有比导光层宽的带隙和载流子阻挡层的载流子阻挡层， 间隙宽于有源层和光导层的宽度。 p型覆层的折射率比n型覆层的折射率低。 通过这样的结构，内部损耗被限制在低水平，随着自由载流子吸收减小，并且半导体激光器件的电阻和热电阻降低，结果激光器件的效率和输出功率提高。

公开(公告)号：US06285699B1

公开(公告)日：2001-09-04

申请号：US09163395

申请日：1998-09-30

申请人： Yumi Naito ,  Satoru Okada ,  Tsuyoshi Fujimoto

发明人： Yumi Naito ,  Satoru Okada ,  Tsuyoshi Fujimoto

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/12 ,  H01S5/2231 ,  H01S5/3432

摘要： On an n-GaAs substrate are sequentially formed an n-GaAs buffer layer, an n-AlGaAs cladding layer, a non-doped InGaAs active layer, a p-AlxGa1−xAs cladding layer, a p-GaAs contact layer, and further an n-AlGaAs current blocking layer having a stripe-like window is embedded in the cladding layer. At the active layer side interface of the current blocking layer, a diffraction grating of cyclic bumps and dips shape is formed, but the diffraction grating is not formed in a region of the stripe-like window where the current blocking layer is not present, i.e., a current injection region. In this way, a semiconductor laser device of low oscillation threshold, high oscillation efficiency, high reliability, long life time, and stabilized oscillation wavelength can be realized.

摘要翻译： 在n-GaAs衬底上依次形成n-GaAs缓冲层，n-AlGaAs覆层，非掺杂InGaAs有源层，p-Al x Ga 1-x As包层，p-GaAs接触层， 具有条状窗口的n-AlGaAs电流阻挡层嵌入包层中。 在电流阻挡层的有源层侧界面，形成了循环凸起和凹陷形状的衍射光栅，但是衍射光栅不形成在不存在电流阻挡层的条状窗口的区域中，即 ，电流注入区域。 以这种方式，可以实现低振荡阈值，高振荡效率，高可靠性，长寿命和稳定的振荡波长的半导体激光器件。

公开(公告)号：US06847667B2

公开(公告)日：2005-01-25

申请号：US10802753

申请日：2004-03-18

申请人： Atsushi Ohkubo ,  Satoru Okada ,  Tsuyoshi Fujimoto ,  Takeshi Koiso ,  Kiyofumi Muro ,  Michio Ohkubo ,  Yutaka Ohki

发明人： Atsushi Ohkubo ,  Satoru Okada ,  Tsuyoshi Fujimoto ,  Takeshi Koiso ,  Kiyofumi Muro ,  Michio Ohkubo ,  Yutaka Ohki

IPC分类号： H01S5/022 ,  H01S5/065 ,  H01S5/14 ,  H01S5/34 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/02208 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/02438 ,  H01S5/0652 ,  H01S5/0656 ,  H01S5/146 ,  H01S5/34

摘要： A semiconductor laser device emitting a laser beam having stable emitting wavelength and a multimode spectrum is provided. The semiconductor laser device is a Fabry-Perot type semiconductor laser device having a layer structure including an active layer of a quantum well structure, and emitting a laser beam having wavelength stabilized by an action of return light and having a multimode spectrum, wherein each well layer satisfies relation: Γ/d≦1.3×10−3 nm−1 where Γ and d(nm) are an optical confinement factor and a thickness of a well layer, respectively.

摘要翻译： 提供了发射具有稳定发射波长和多模光谱的激光束的半导体激光装置。 半导体激光器件是具有包括量子阱结构的有源层的层结构的法布里 - 珀罗型半导体激光器件，并且发射具有通过返回光的作用而具有波长稳定并且具有多模光谱的波长的激光束，其中每个阱 层满足关系：其中Gamma和d（nm）分别是光限制因子和阱层的厚度。

公开(公告)号：US6118799A

公开(公告)日：2000-09-12

申请号：US817602

申请日：1997-06-10

申请人： Atsushi Okubo ,  Yoshikazu Yamada ,  Tsuyoshi Fujimoto ,  Satoru Okada ,  Yumi Naito ,  Kiyofumi Muro

发明人： Atsushi Okubo ,  Yoshikazu Yamada ,  Tsuyoshi Fujimoto ,  Satoru Okada ,  Yumi Naito ,  Kiyofumi Muro

IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/343 ,  H01S3/085

CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/2238 ,  H01S5/204 ,  H01S5/222 ,  H01S5/3432

摘要： A semiconductor device including a buffer layer 32 on n-GaAs, a clad layer 31, a wave guide layer 30 and a carrier block layer 29 of n-AlGaAs, a side barrier layer 28 of non-doped AlGaAs, an active layer 27 which is formed by two non-doped GaAs quantum well layers and a barrier layer of AlGaAs, a side barrier layer 26 of non-doped AlGaAs, a carrier block layer 25, a wave guide layer 23 and a clad layer 22 of p-AlGaAs, and a cap layer 21 of p-GaAs are grown in this order. Inside the wave guide layer 23, current blocking layers 24 having a lower refractive index and higher Al-composition than that of the wave guide layer and sandwich a strip-shaped active region 34. This creates a refractive index difference between the active region 34 and buried regions 33 in which each of the current blocking layers 24 exists, thereby forming a refractive index guide structure. Thus, it is possible to obtain a high-output semiconductor laser device of the refractive index guided type which is easy to manufacture.

摘要翻译： PCT No.PCT / JP95 / 02118 Sec。 371日期：1997年6月10日 102（e）日期1997年6月10日PCT提交1995年10月16日PCT公布。 WO96 / 12328 PCT出版物 日期：1996年04月25日包括n-GaAs上的缓冲层32，n-AlGaAs的覆盖层31，波导层30和载流子层29的半导体器件，非掺杂AlGaAs的侧面阻挡层28， 由两个非掺杂GaAs量子阱层和AlGaAs的势垒层，非掺杂AlGaAs的侧阻层26，载流子阻挡层25，波导层23和覆盖层22形成的有源层27 的p-AlGaAs，并且p-GaAs的覆盖层21依次生长。 在波导层23内，电流阻挡层24具有比波导层低的折射率和更高的Al组分，并且夹持条形有源区域34.这在活性区域34和 其中存在每个电流阻挡层24的埋入区域33，从而形成折射率引导结构。 因此，可以获得易于制造的折射率导向型的高输出半导体激光器件。

公开(公告)号：US09742951B2

公开(公告)日：2017-08-22

申请号：US14527988

申请日：2014-10-30

申请人： Atsushi Sugai ,  Tsuyoshi Fujimoto

发明人： Atsushi Sugai ,  Tsuyoshi Fujimoto

IPC分类号： G02B9/04 ,  H04N1/028 ,  G02B7/02

CPC分类号： H04N1/028 ,  G02B7/021 ,  G02B7/025 ,  G02B7/028 ,  H04N2201/0081 ,  H04N2201/0094 ,  H04N2201/02431 ,  H04N2201/02458

摘要： A lens unit includes a tube lens; a single lens arranged at a downstream side with respect to the tube lens in an optical incidence direction; and a supporting member that supports the tube lens and the single lens. Reflection light from a document is condensed on an image sensor by the tube lens and the single lens to form an image. An end surface part, not facing the tube lens, of the single lens is in direct contact with the supporting member.

公开(公告)号：US20130135859A1

公开(公告)日：2013-05-30

申请号：US13678936

申请日：2012-11-16

申请人： Tokiko INOUE ,  Mitsuru Nakajima ,  Tsuyoshi Fujimoto ,  Akihiro Iwamatsu ,  Chihiro Tanaka

发明人： Tokiko INOUE ,  Mitsuru Nakajima ,  Tsuyoshi Fujimoto ,  Akihiro Iwamatsu ,  Chihiro Tanaka

IPC分类号： F21V8/00

CPC分类号： G02B6/0011 ,  G03G15/04054 ,  H04N1/02481 ,  H04N1/02855 ,  H04N1/02865 ,  H04N2201/02435

摘要： A light irradiator including multiple point light sources arranged in a straight line, a light-transmissive light guiding member provided in front of the point light sources in an emission direction of beams of light emitted from the point light sources, the light guiding member guiding the beams of light in a predetermined direction toward a surface to be irradiated; and two or more protrusions protruding toward the point light sources, provided on a light entering surface of the light guiding member and arranged in the same direction as the point light sources. The light guiding member and the point light sources are positioned such that a distance between the protrusions provided to the light guiding member and irradiation surfaces of the point light sources is equal at two positions.

摘要翻译： 一种包括以直线排列的多点光源的光照射器，沿点光源发射的光束的发射方向设置在点光源前面的透光导光部件，导光部件引导 沿预定方向的光束朝向待照射的表面; 以及设置在导光部件的光入射面上且与点光源相同的方向配置的朝向点光源突出的两个以上的突起。 导光构件和点光源被定位成使得提供给导光构件的突起和点光源的照射表面之间的距离在两个位置处相等。

公开(公告)号：US20110211608A1

公开(公告)日：2011-09-01

申请号：US12998518

申请日：2008-10-31

申请人： Tsuyoshi Fujimoto ,  Yumi Yamada ,  Yuji Yamagata ,  Tsuyoshi Saitoh ,  Manabu Katahira

发明人： Tsuyoshi Fujimoto ,  Yumi Yamada ,  Yuji Yamagata ,  Tsuyoshi Saitoh ,  Manabu Katahira

IPC分类号： H01S5/34

CPC分类号： H01S5/20 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/3213 ,  H01S2301/18

摘要： A semiconductor laser element includes an active layer, an n-type carrier blocking layer arranged so as to be adjacent to the active layer and having a bandgap width that is equal to or greater than those of barrier layers, an n-type waveguide layer arranged on a side opposite to a side of the n-type carrier-blocking layer on which the active layer is arranged, so as to be adjacent to the n-type carrier blocking layer, an n-type clad layer arranged on a side opposite to a side of the n-type waveguide layer on which the active layer is arranged, so as to be adjacent to the n-type waveguide layer, and having a bandgap width that is greater than that of the n-type waveguide layer, and a p-type clad layer arranged on a side opposite to a side of the active layer on which the n-type carrier blocking layer is arranged, so as to be adjacent to the active layer, and having a bandgap width that is greater than those of the barrier layers and the n-type waveguide layer.

摘要翻译： 半导体激光器元件包括有源层，n型载流子阻挡层，被布置成与有源层相邻并且具有等于或大于阻挡层的带隙宽度的带隙宽度; n型波导层布置 在与其上配置有源层的n型载流子阻挡层的一侧相对的一侧，与n型载流子阻挡层相邻，配置在与n型载流子阻挡层相对的一侧上的n型覆盖层 n型波导层的配置有活性层的一侧，与n型波导层相邻，并且具有比n型波导层的带隙宽度大的带隙宽度， p型覆盖层布置在与有源层的配置有n型载流子阻挡层的一侧相对的一侧上，以与活性层相邻，并且具有大于 阻挡层和n型波导层。

公开(公告)号：US06995406B2

公开(公告)日：2006-02-07

申请号：US10486050

申请日：2003-06-06

申请人： Tsuyoshi Tojo ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Tomonori Hino ,  Osamu Goto ,  Tsuyoshi Fujimoto ,  Osamu Matsumoto ,  Motonobu Takeya ,  Yoshio Oofuji

发明人： Tsuyoshi Tojo ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Tomonori Hino ,  Osamu Goto ,  Tsuyoshi Fujimoto ,  Osamu Matsumoto ,  Motonobu Takeya ,  Yoshio Oofuji

IPC分类号： H01L33/00

CPC分类号： B82Y20/00 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01S5/02276 ,  H01S5/042 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/34333 ,  H01S5/4031

摘要： In a multi-beam semiconductor laser including nitride III–V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III–V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.

摘要翻译： 在包括层叠在蓝宝石或其他材料的基板的一个表面上的氮化物III-V化合物半导体层以形成激光结构的多光束半导体激光器中，并且包括形成在氮化物III上的多个阳极电极和多个阴极电极 -V化合物半导体层，其中一个阳极形成为通过绝缘膜桥接在一个阴极电极上，并且另一个阳极电极形成为通过绝缘膜桥接在另一个阴极电极上。