利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

11 条记录 (耗时 0.018 秒)

    Semiconductor laser apparatus
    1.
    发明授权
    Semiconductor laser apparatus 有权
    半导体激光装置

    公开(公告)号：US06546032B1

    公开(公告)日：2003-04-08

    申请号：US09644080

    申请日：2000-08-23

    申请人： Yasuo Oeda ,  Satoru Okada ,  Kouichi Igarashi ,  Yumi Naito ,  Kiyofumi Muro ,  Takeshi Koiso ,  Yoshikazu Yamada ,  Atsushi Okubo ,  Tsuyoshi Fujimoto

    发明人： Yasuo Oeda ,  Satoru Okada ,  Kouichi Igarashi ,  Yumi Naito ,  Kiyofumi Muro ,  Takeshi Koiso ,  Yoshikazu Yamada ,  Atsushi Okubo ,  Tsuyoshi Fujimoto

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/34313 ,  H01S5/34353

    摘要： On a substrate of n-type GaAs are sequentially formed an n-type cladding layer (AlGaAs, Al content x=0.07, thickness t=2.86 &mgr;m), an n-type optical waveguide layer (GaAs, t=0.49 &mgr;m), an n-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), an active layer (composed of an In0.18Ga0.82As quantum well layer and a GaAs barrier layer), a p-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), a p-type optical waveguide layer (GaAs, t=0.49 &mgr;m), a p-type cladding layer (AlGaAs, x=0.20, t=1.08 &mgr;m), and a p-type cap layer (GaAs) in which a pair of n-type current blocking layers (GaAs) are buried. With this construction, the occurrence of a wavelength spit due to a higher-order mode can be inhibited thereby stabilizing a higher power operation.

    摘要翻译： 在n型GaAs衬底上依次形成n型覆层（AlGaAs，Al含量x = 0.07，厚度t =2.86μm），n型光波导层（GaAs，t =0.49μm）， n型载流子阻挡层（AlGaAs，x = 0.40，t =0.03μm），有源层（由In0.18Ga0.82As量子阱层和GaAs势垒层构成），p型载流子阻挡层（AlGaAs ，p型光波导层（GaAs，t =0.49μm），p型覆层（AlGaAs，x = 0.20，t =1.08μm），p型光波导层 封装了一对n型电流阻挡层（GaAs）的封装层（GaAs）。 利用这种结构，可以抑制由高阶模式引起的波长吐出的发生，从而稳定高功率操作。

    Semiconductor laser device, semiconductor laser module, rare-earth-element-doped optical fiber amplifier and fiber laser
    2.
    发明授权
    Semiconductor laser device, semiconductor laser module, rare-earth-element-doped optical fiber amplifier and fiber laser 有权
    半导体激光器件，半导体激光器模块，稀土元素掺杂光纤放大器和光纤激光器

    公开(公告)号：US06477191B1

    公开(公告)日：2002-11-05

    申请号：US09538728

    申请日：2000-03-30

    申请人： Satoru Okada ,  Tsuyoshi Fujimoto ,  Yasuo Oeda

    发明人： Satoru Okada ,  Tsuyoshi Fujimoto ,  Yasuo Oeda

    IPC分类号： H01S500

    CPC分类号： H01S5/12

    摘要： A semiconductor laser device includes: an active layer; upper waveguide layers and a lower waveguide layer sandwiching the active layer therebetween; upper and lower cladding layers sandwiching the active layer and the upper and lower waveguide layers therebetween; and a current-narrowing layer defining a current-injection region for injecting current to the active layer, wherein a diffraction grating having a periodical structure in a resonance cavity direction is buried in any one of the waveguide layers, the diffraction grating being present in at least a part of the current-injection region; and the waveguide layer in which the diffraction grating is buried and the cladding layer adjoining to that waveguide layer forms an interface which is substantially flat in the resonance cavity direction. With the constitution, a waveguide structure which has a diffraction grating offering a higher flexibility in design and manufacture in terms of the coupling efficiency is realized, thereby easily providing a dynamic single-mode semiconductor laser device with higher reproducibility, yield and reliability.

    摘要翻译： 半导体激光器件包括：有源层; 上波导层和夹在其间的有源层的下波导层; 夹层有源层和上下波导层的上下包层; 以及限定用于向有源层注入电流的电流注入区域的电流变窄层，其中在谐振腔方向上具有周期性结构的衍射光栅被掩埋在任何一个波导层中，衍射光栅存在于 电流注入区域的至少一部分; 并且其中掩埋衍射光栅的波导层和与该波导层相邻的包层形成在谐振腔方向上基本上平坦的界面。 利用该结构，实现了在耦合效率方面具有在设计和制造中具有较高灵活性的衍射光栅的波导结构，由此容易地提供具有更高再现性，产率和可靠性的动态单模半导体激光器件。

    Semiconductor laser device
    3.
    发明授权
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号：US06175582B1

    公开(公告)日：2001-01-16

    申请号：US09199435

    申请日：1998-11-25

    申请人： Yumi Naito ,  Yasuo Oeda ,  Tsuyoshi Fujimoto

    发明人： Yumi Naito ,  Yasuo Oeda ,  Tsuyoshi Fujimoto

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/3213 ,  H01S5/3432

    摘要： Optical guide layers are formed on both faces of the active layer, respectively, which optical guide layers have a band gap wider than that of the active layer, an n-type cladding layer and a p-type cladding layer respectively formed so as to sandwich the active layer and the optical guide layers therebetween, which cladding layers have a band gap wider than those of the optical guide layers, and carrier blocking layers are respectively formed between the active layer and the optical guide layers, which carrier blocking layers have a band gap wider than those of the active layer and the optical guide layers. The refractive index of the p-type cladding layer is lower than that of the n-type cladding layer. With such constitution inner losses are limited to a low level, as free carrier absorption is reduced, and the electric and thermal resistances of a semiconductor laser device are reduced, with the result that the laser device is enhanced in efficiency and output power.

    摘要翻译： 导光层分别形成在有源层的两个表面上，这些导光层的带隙宽于有源层，n型包覆层和p型覆层分别形成为夹层 其间的有源层和导光层分别形成在该有源层与导光层之间的这些包层具有比导光层宽的带隙和载流子阻挡层的载流子阻挡层， 间隙宽于有源层和光导层的宽度。 p型覆层的折射率比n型覆层的折射率低。 通过这样的结构，内部损耗被限制在低水平，随着自由载流子吸收减小，并且半导体激光器件的电阻和热电阻降低，结果激光器件的效率和输出功率提高。

    Method and apparatus for detecting wavelength of laser beam
    4.
    发明授权
    Method and apparatus for detecting wavelength of laser beam 失效
    用于检测激光束波长的方法和装置

    公开(公告)号：US5319441A

    公开(公告)日：1994-06-07

    申请号：US114287

    申请日：1993-09-01

    申请人： Mitsugu Terada ,  Ken Ohmata ,  Michito Uehara ,  Hideaki Shibata ,  Yasuo Oeda ,  Yuichiro Terashi

    发明人： Mitsugu Terada ,  Ken Ohmata ,  Michito Uehara ,  Hideaki Shibata ,  Yasuo Oeda ,  Yuichiro Terashi

    IPC分类号： G01J3/26 ,  G01J9/02 ,  H01S3/00 ,  G01B9/02

    CPC分类号： G01J9/0246 ,  G01J2003/265

    摘要： A laser light, whose wavelength is to be measured, is introduced into an etalon, a concentric circular interference stripe derived from the etalon is irradiated onto a one-dimensional photodetector array and a diameter of the interference stripe is measured to measure the wavelength of the laser light. Alternatively, if a reference laser light of known wavelength is introduced into the etalon, as described above, a wavelength measurement of extremely high accuracy can be made without being affected by positional deviations of the optical system.

    摘要翻译： 将要测量其波长的激光引入标准具中，将衍生自标准具的同心圆形干涉条纹照射到一维光电检测器阵列上，并测量干涉条纹的直径以测量波长 激光灯。 或者，如果将已知波长的参考激光引入标准具，如上所述，可以在不受光学系统的位置偏差的影响的情况下进行极高精度的波长测量。

    Semiconductor laser device, semiconductor laser module, and optical fiber amplifier
    5.
    发明申请
    Semiconductor laser device, semiconductor laser module, and optical fiber amplifier 有权
    半导体激光器件，半导体激光器模块和光纤放大器

    公开(公告)号：US20050105845A1

    公开(公告)日：2005-05-19

    申请号：US11020320

    申请日：2004-12-27

    申请人： Yasuo Oeda ,  Kiyofumi Muro ,  Michio Okubo

    发明人： Yasuo Oeda ,  Kiyofumi Muro ,  Michio Okubo

    IPC分类号： H01S3/06 ,  G02B6/28 ,  H01S3/10 ,  H01S5/20 ,  H01S5/22 ,  H01S5/343

    CPC分类号： H01S5/20 ,  H01S5/2004

    摘要： A semiconductor laser device includes a layer structure of a first conductive cladding layer, an active layer, and a second conductive cladding layer sequentially grown on a first conductive semiconductor substrate; and a light emitting facet from which a laser beam having a first wavelength is emitted. Refractive indexes of the first and the second conductive cladding layers with respect to the first wavelength are lower than an effective refractive index with respect to the first wavelength. With respect to a light having a second wavelength incident on the light emitting facet from outside, the refractive index of at least one of the first and the second conductive cladding layers is equal to or higher than the effective refractive index with respect to the second wavelength.

    摘要翻译： 半导体激光器件包括在第一导电半导体衬底上顺序生长的第一导电覆层，有源层和第二导电覆层的层结构; 以及发射具有第一波长的激光束的发光小面。 第一和第二导电包覆层相对于第一波长的折射率低于相对于第一波长的有效折射率。 对于从外部入射到发光小面上的具有第二波长的光，第一和第二导电包覆层中的至少一个的折射率相对于第二波长的折射率等于或高于有效折射率 。

    Semiconductor laser light source and solid-state laser apparatus
    6.
    发明授权
    Semiconductor laser light source and solid-state laser apparatus 失效
    半导体激光光源和固态激光装置

    公开(公告)号：US6104741A

    公开(公告)日：2000-08-15

    申请号：US49076

    申请日：1998-03-27

    申请人： Kouichi Igarashi ,  Yasuo Oeda ,  Kiyofumi Muro

    发明人： Kouichi Igarashi ,  Yasuo Oeda ,  Kiyofumi Muro

    IPC分类号： G02B6/42 ,  G02B27/10 ,  G02B27/42 ,  H01S3/00 ,  H01S5/00 ,  H01S5/40 ,  H01S3/091 ,  G02B6/00 ,  G02B6/32 ,  G02B6/34

    CPC分类号： G02B27/12 ,  G02B19/0014 ,  G02B19/0057 ,  G02B27/123 ,  G02B6/425 ,  G02B6/4206 ,  H01S3/005 ,  H01S5/005 ,  H01S5/4031

    摘要： A semiconductor laser light source includes: a semiconductor laser array which emits laser beams whose polarization planes are parallel to each other and whose divergent angles .theta.z and .theta.x in two orthogonal directions satisfy an inequality .theta.z>.theta.x; a cylindrical lens which converges the laser beams emitted from the semiconductor laser array in a direction that decreases the divergent angle .theta.z; a wave plate which controls the direction of polarization so that the polarization planes of the laser beams having passed through the cylindrical lens are at 90 degrees to each other; a birefringent optical element which merges by the birefringent effect the optical paths of the laser beams having passed through the wave plate; and a light emitting surface which converges the laser beams merged by the birefringent optical element in a direction that decreases the divergent angle .theta.x.Thus, the efficiency of merging the laser beams and the efficiency of joining the laser beams to the succeeding optical system can be greatly improved.

    摘要翻译： 半导体激光源包括：发射激光束的半导体激光器阵列，其偏振面彼此平行，并且其两个正交方向上的发散角θz和θx满足不等式θz>θx; 柱面透镜，其使从半导体激光器阵列发射的激光束沿减小发散角θz的方向会聚; 控制偏振方向的波片，使得通过柱面透镜的激光束的偏振面相互成90度; 双折射光学元件，其通过双折射效应合并已经通过波片的激光束的光路; 以及会聚由双折射光学元件合流的激光束沿着减小发散角θx的方向会聚的发光面。 因此，可以大大提高合并激光束的效率和将激光束接合到后续光学系统的效率。

    Semiconductor laser device, semiconductor laser module, and optical fiber amplifier
    8.
    发明授权
    Semiconductor laser device, semiconductor laser module, and optical fiber amplifier 有权
    半导体激光器件，半导体激光器模块和光纤放大器

    公开(公告)号：US07203215B2

    公开(公告)日：2007-04-10

    申请号：US11020320

    申请日：2004-12-27

    申请人： Yasuo Oeda ,  Kiyofumi Muro ,  Michio Okubo

    发明人： Yasuo Oeda ,  Kiyofumi Muro ,  Michio Okubo

    IPC分类号： H01S5/00

    CPC分类号： H01S5/20 ,  H01S5/2004

    摘要： A semiconductor laser device includes a layer structure of a first conductive cladding layer, an active layer, and a second conductive cladding layer sequentially grown on a first conductive semiconductor substrate; and a light emitting facet from which a laser beam having a first wavelength is emitted. Refractive indexes of the first and the second conductive cladding layers with respect to the first wavelength are lower than an effective refractive index with respect to the first wavelength. With respect to a light having a second wavelength incident on the light emitting facet from outside, the refractive index of at least one of the first and the second conductive cladding layers is equal to or higher than the effective refractive index with respect to the second wavelength.

    摘要翻译： 半导体激光器件包括在第一导电半导体衬底上顺序生长的第一导电覆层，有源层和第二导电覆层的层结构; 以及发射具有第一波长的激光束的发光小面。 第一和第二导电包覆层相对于第一波长的折射率低于相对于第一波长的有效折射率。 对于从外部入射到发光小面上的具有第二波长的光，第一和第二导电包覆层中的至少一个的折射率相对于第二波长的折射率等于或高于有效折射率 。