公开(公告)号：US10998484B2

公开(公告)日：2021-05-04

申请号：US15777134

申请日：2016-10-04

申请人： NITTO DENKO CORPORATION

发明人： Keisuke Okumura ,  Satoshi Honda

IPC分类号： H01L35/34 ,  H01L35/08 ,  B22F3/10 ,  H01L27/16 ,  H01L35/28 ,  H01L35/16

摘要： Provided is a semiconductor device manufacturing method which can suppress the occurrence of positional deviation or inclination of a semiconductor element when the semiconductor element is fixed so as to be sandwiched-between two insulating substrates. The semiconductor device manufacturing method includes: obtaining a laminated body in which a semiconductor element is temporarily adhered on a first electrode formed on a first insulating substrate with a first pre-sintering layer sandwiched therebetween; temporarily adhering the semiconductor element on a second electrode formed on a second insulating substrate with a second pre-sintering layer sandwiched therebetween, the second pre-sintering layer being provided on a side opposite to the first pre-sintering layer, to obtain a semiconductor device precursor; and simultaneously heating the first pre-sintering layer and the second pre-sintering layer, to bond the semiconductor element to the first electrode and the second electrode.