公开(公告)号：US20200295236A1

公开(公告)日：2020-09-17

申请号：US16642846

申请日：2018-08-28

Applicant: OSRAM OLED GmbH

Inventor： Markus Pindl ,  Hailing Cui

IPC: H01L33/50 ,  H01L33/56

Abstract: A method for manufacturing an optoelectronic semiconductor device and an optoelectronic semiconductor device are disclosed. In an embodiment a method includes applying a photostructurable first photo layer on the radiation side of a semiconductor layer sequence, photostructuring the first photo layer, wherein holes are formed in the first photo layer in regions of first illumination areas, applying a first converter material to the structured first photo layer, wherein the first converter material partially or completely fills the holes, thereby forming first converter elements in the holes, the first converter elements covering the associated first illumination areas, removing the first photo layer; and applying a second converter material to the radiation side at least in regions of second illumination areas, the second illumination areas being different from the first illumination areas.