公开(公告)号：US20240365657A1

公开(公告)日：2024-10-31

申请号：US18764143

申请日：2024-07-03

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： SEIJI TAKAGI ,  YUKO KISHIMOTO

IPC: H10K85/20 ,  H10K30/20 ,  H10K39/32 ,  H10K85/10

CPC classification number: H10K85/215 ,  H10K30/211 ,  H10K39/32 ,  H10K85/111

Abstract: A photoelectric conversion element includes: a first electrode; a second electrode opposite to the first electrode; and a photoelectric conversion layer located between the first electrode and the second electrode. The photoelectric conversion layer contains a donor semiconductor, a first fullerene derivative, a second fullerene derivative different in molecular structure from the first fullerene derivative, and a polymer. The polymer contains at least one selected from the group consisting of polyvinylcarbazole, poly(triarylamine), polyfluorene, a polyvinylcarbazole derivative, a poly(triarylamine) derivative, and a polyfluorene derivative.

公开(公告)号：US20230283872A1

公开(公告)日：2023-09-07

申请号：US17975272

申请日：2022-10-27

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： HIROAKI IIJIMA ,  MAYSAYA HIRADE ,  YUKO KISHIMOTO

IPC: H04N5/33

CPC classification number: H04N23/56 ,  H10K39/32

Abstract: A camera system includes a light source having a peak emission wavelength at room temperature in a near-infrared region, and an imaging device including a photoelectric conversion element that converts near-infrared light into an electric charge. An external quantum efficiency of the photoelectric conversion element has a first peak at a first wavelength longer than the peak emission wavelength, and the external quantum efficiency at the first wavelength is higher than the external quantum efficiency at the peak emission wavelength.

公开(公告)号：US20230045956A1

公开(公告)日：2023-02-16

申请号：US17935607

申请日：2022-09-27

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： MASUMI IZUCHI ,  HIROAKI IIJIMA ,  MASAYA HIRADE ,  YUKO KISHIMOTO

IPC: H01L51/42 ,  H01L51/44

Abstract: A photoelectric conversion element includes a first electrode, a second electrode, a photoelectric conversion layer positioned between the first electrode and the second electrode and including a donor semiconductor material and an acceptor semiconductor material, and a first charge blocking layer positioned between the first electrode and the photoelectric conversion layer. The first charge blocking layer includes a first material and a second material having an energy band gap narrower than that of the first material. The electron affinity of the first material is lower than that of the second material, and the ionization potential of the first material is higher than that of the second material.

公开(公告)号：US20230045630A1

公开(公告)日：2023-02-09

申请号：US17938682

申请日：2022-10-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： HIROAKI IIJIMA ,  YUKO KISHIMOTO ,  MASAYA HIRADE ,  SHINJI TANAKA

IPC: H01L27/30 ,  H01L51/42 ,  H04N5/235

Abstract: An imaging device includes pixels. Each of the pixels includes a first electrode, a second electrode, a photoelectric conversion layer that is located between the first electrode and the second electrode, that contains a donor semiconductor material and an acceptor semiconductor material, and that generates a pair of an electron and a hole, a first charge blocking layer located between the first electrode and the photoelectric conversion layer, a second charge blocking layer located between the second electrode and the photoelectric conversion layer, and a charge storage region that is electrically connected to the second electrode and that stores the hole. The difference between the electron affinity of the acceptor semiconductor material and the electron affinity of the first charge blocking layer is larger than the difference between the ionization potential of the donor semiconductor material and the ionization potential of the second charge blocking layer.