公开(公告)号：US20170225480A1

公开(公告)日：2017-08-10

申请号：US15410018

申请日：2017-01-19

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： TAKASHI HARUGUCHI ,  KAZUNARI CHIKANAWA ,  TAKAHISA KATO ,  HIDEAKI HORIO ,  SHINJI TANAKA

IPC: B41J2/175

CPC classification number: B41J2/17563 ,  B41J2/055 ,  B41J2/14233 ,  B41J2/175 ,  B41J2002/14403 ,  B41J2002/16502

Abstract: An ink jet head includes a pressure chamber, a main flow path, an actuator, a nozzle, a first communication flow path, and a filter. The pressure chamber is filled with an ink. The main flow path supplies the ink to the pressure chamber. The actuator changes the pressure of the ink filled in the pressure chamber. The nozzle is connected to the pressure chamber and ejects the ink filled in the pressure chamber by driving of the actuator. The first communication flow path connects the pressure chamber to the main flow path. The filter is disposed at a predetermined position between the nozzle and the vicinity of a first boundary of the main flow path and the first communication flow path, and the filter captures an impurity in the ink which has a size larger than the diameter of the nozzle.

公开(公告)号：US20230045630A1

公开(公告)日：2023-02-09

申请号：US17938682

申请日：2022-10-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： HIROAKI IIJIMA ,  YUKO KISHIMOTO ,  MASAYA HIRADE ,  SHINJI TANAKA

IPC: H01L27/30 ,  H01L51/42 ,  H04N5/235

Abstract: An imaging device includes pixels. Each of the pixels includes a first electrode, a second electrode, a photoelectric conversion layer that is located between the first electrode and the second electrode, that contains a donor semiconductor material and an acceptor semiconductor material, and that generates a pair of an electron and a hole, a first charge blocking layer located between the first electrode and the photoelectric conversion layer, a second charge blocking layer located between the second electrode and the photoelectric conversion layer, and a charge storage region that is electrically connected to the second electrode and that stores the hole. The difference between the electron affinity of the acceptor semiconductor material and the electron affinity of the first charge blocking layer is larger than the difference between the ionization potential of the donor semiconductor material and the ionization potential of the second charge blocking layer.