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    PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING APPARATUS
    3.
    发明申请
    PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING APPARATUS 有权

    公开(公告)号：US20230045956A1

    公开(公告)日：2023-02-16

    申请号：US17935607

    申请日：2022-09-27

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： MASUMI IZUCHI ,  HIROAKI IIJIMA ,  MASAYA HIRADE ,  YUKO KISHIMOTO

    IPC: H01L51/42 ,  H01L51/44

    Abstract: A photoelectric conversion element includes a first electrode, a second electrode, a photoelectric conversion layer positioned between the first electrode and the second electrode and including a donor semiconductor material and an acceptor semiconductor material, and a first charge blocking layer positioned between the first electrode and the photoelectric conversion layer. The first charge blocking layer includes a first material and a second material having an energy band gap narrower than that of the first material. The electron affinity of the first material is lower than that of the second material, and the ionization potential of the first material is higher than that of the second material.

    IMAGING DEVICE
    4.
    发明申请
    IMAGING DEVICE 有权

    公开(公告)号：US20230045630A1

    公开(公告)日：2023-02-09

    申请号：US17938682

    申请日：2022-10-07

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： HIROAKI IIJIMA ,  YUKO KISHIMOTO ,  MASAYA HIRADE ,  SHINJI TANAKA

    IPC: H01L27/30 ,  H01L51/42 ,  H04N5/235

    Abstract: An imaging device includes pixels. Each of the pixels includes a first electrode, a second electrode, a photoelectric conversion layer that is located between the first electrode and the second electrode, that contains a donor semiconductor material and an acceptor semiconductor material, and that generates a pair of an electron and a hole, a first charge blocking layer located between the first electrode and the photoelectric conversion layer, a second charge blocking layer located between the second electrode and the photoelectric conversion layer, and a charge storage region that is electrically connected to the second electrode and that stores the hole. The difference between the electron affinity of the acceptor semiconductor material and the electron affinity of the first charge blocking layer is larger than the difference between the ionization potential of the donor semiconductor material and the ionization potential of the second charge blocking layer.

    IMAGING DEVICE
    6.
    发明公开
    IMAGING DEVICE 审中-公开

    公开(公告)号：US20230371289A1

    公开(公告)日：2023-11-16

    申请号：US18357110

    申请日：2023-07-22

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： MASAYA HIRADE ,  HIROAKI IIJIMA ,  YUKO KISHIMOTO ,  MASUMI IZUCHI

    IPC: H10K30/30 ,  H10K85/20 ,  H10K85/30

    CPC classification number: H10K30/353 ,  H10K85/211 ,  H10K85/311 ,  H10K30/86

    Abstract: An imaging device includes a photoelectric conversion element that includes a first electrode, a second electrode facing the first electrode, and a photoelectric conversion layer located between the first electrode and the second electrode; and a charge detection circuit that reads a charge generated in the photoelectric conversion element. The photoelectric conversion layer is a bulk heterojunction layer that contains a phthalocyanine derivative or a naphthalocyanine derivative and a fullerene polymer. In the fullerene polymer, a fullerene or a fullerene derivative is crosslinked by a crosslinking structure represented by general formula (1) below. In general formula (1), X is a bifunctional functional group.


    NCH2XCH2N  (1)

    IMAGING APPARATUS
    7.
    发明申请
    IMAGING APPARATUS 有权

    公开(公告)号：US20210359005A1

    公开(公告)日：2021-11-18

    申请号：US17386009

    申请日：2021-07-27

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： MASAYA HIRADE ,  HIROAKI IIJIMA

    IPC: H01L27/30 ,  H01L51/42 ,  H01L51/00

    Abstract: An imaging apparatus includes a semiconductor substrate; a first electrode; a second electrode; a photoelectric conversion layer disposed between the first electrode and the second electrode, and including a donor organic semiconductor material and an acceptor organic semiconductor material; a charge accumulation node positioned within the semiconductor substrate and electrically connected to the second electrode; and a first blocking layer disposed between the first electrode and the photoelectric conversion layer. The photoelectric conversion layer has an ionization potential of lower than or equal to 5.3 eV. The first blocking layer has an electron affinity lower than an electron affinity of the acceptor organic semiconductor material included in the photoelectric conversion layer. The imaging apparatus has spectral sensitivity in a near-infrared light region having wavelengths of greater than or equal to 650 nm and less than or equal to 3000 nm.

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