公开(公告)号：US10483392B2

公开(公告)日：2019-11-19

申请号：US15988987

申请日：2018-05-24

Applicant: QUALCOMM Incorporated

Inventor： Ravi Pramod Kumar Vedula

IPC: H01L29/78 ,  H01L21/683 ,  H01L21/84 ,  H01L23/522 ,  H01L23/528 ,  H01L23/66 ,  H01L27/12 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

Abstract: A radio frequency (RF) integrated circuit (RFIC) switch multi-finger transistor includes a first dual gate transistor having a first gate with a first gate length on a first side of a substrate, and a second gate with a second gate length on a second side of the substrate. The RFIC also includes a second dual gate transistor having a third gate with a third gate length on the first side of the substrate, and a fourth gate with a fourth gate length on the second side of the substrate. The second gate length is different than the fourth gate length, and the second dual gate transistor is coupled in series with the first dual gate transistor in the RFIC switch multi-finger transistor.

公开(公告)号：US10475816B2

公开(公告)日：2019-11-12

申请号：US16000501

申请日：2018-06-05

Applicant: QUALCOMM Incorporated

Inventor： Ravi Pramod Kumar Vedula ,  Sinan Goktepeli ,  Jarred Moore

IPC: H01L27/12 ,  H01L23/66 ,  H01L29/06

Abstract: A radio frequency integrated circuit (RFIC) is described. The RFIC includes a switch field effect transistor (FET), including a source region, a drain region, a body region, and a gate. The RFIC also includes a body bypass resistor coupled between the gate and the body region. The RFIC further includes a gate isolation resistor coupled between the gate and the body region. The RFIC also includes a diode coupled between the body bypass resistor and the gate isolation resistor.