公开(公告)号：US11010263B2

公开(公告)日：2021-05-18

申请号：US16254920

申请日：2019-01-23

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  J. James Tringali ,  Ely Tsern

IPC: G06F11/14 ,  G11C7/20 ,  G11C14/00 ,  G06F3/06

Abstract: The embodiments described herein describe technologies for non-volatile memory persistence in a multi-tiered memory system including two or more memory technologies for volatile memory and non-volatile memory.

公开(公告)号：US10191822B2

公开(公告)日：2019-01-29

申请号：US15114795

申请日：2014-12-19

Applicant: RAMBUS INC.

Inventor： Frederick A. Ware ,  J. James Tringali ,  Ely Tsern

IPC: G06F11/14 ,  G11C7/20 ,  G11C14/00 ,  G06F3/06

Abstract: The embodiments described herein describe technologies for non-volatile memory persistence in a multi-tiered memory system including two or more memory technologies for volatile memory and non-volatile memory.