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公开(公告)号:US20240372542A1
公开(公告)日:2024-11-07
申请号:US18638218
申请日:2024-04-17
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Ely Tsern , Brian Leibowitz , Jared Zerbe
Abstract: An integrated circuit includes a delay circuit and first and second interface circuits. The delay circuit delays a first timing signal by an internal delay to generate an internal timing signal. The first interface circuit communicates data to an external device in response to the internal timing signal. The second interface circuit transmits an external timing signal for capturing the data in the external device. An external delay is added to the external timing signal in the external device to generate a delayed external timing signal. The delay circuit sets the internal delay based on a comparison between the delayed external timing signal and a calibration signal transmitted by the first interface circuit.
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公开(公告)号:US11646090B2
公开(公告)日:2023-05-09
申请号:US17245491
申请日:2021-04-30
Applicant: Rambus Inc.
Inventor: Ely Tsern , Frederick A Ware , Suresh Rajan , Thomas Vogelsang
CPC classification number: G11C29/24 , G06F11/1008 , G11C29/50016 , G11C5/04 , G11C2029/4402 , G11C2211/4061
Abstract: A method of operation in an integrated circuit (IC) memory device is disclosed. The method includes refreshing a first group of storage rows in the IC memory device at a first refresh rate. A retention time for each of the rows is tested. The testing for a given row under test includes refreshing at a second refresh rate that is slower than the first refresh rate. The testing is interruptible based on an access request for data stored in the given row under test.
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公开(公告)号:US11451218B2
公开(公告)日:2022-09-20
申请号:US16880694
申请日:2020-05-21
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Ely Tsern , Brian Leibowitz , Jared Zerbe
Abstract: An integrated circuit includes a delay circuit and first and second interface circuits. The delay circuit delays a first timing signal by an internal delay to generate an internal timing signal. The first interface circuit communicates data to an external device in response to the internal timing signal. The second interface circuit transmits an external timing signal for capturing the data in the external device. An external delay is added to the external timing signal in the external device to generate a delayed external timing signal. The delay circuit sets the internal delay based on a comparison between the delayed external timing signal and a calibration signal transmitted by the first interface circuit.
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公开(公告)号:US11328764B2
公开(公告)日:2022-05-10
申请号:US17323889
申请日:2021-05-18
Applicant: Rambus Inc.
Inventor: Ian Shaeffer , Ely Tsern , Craig Hampel
IPC: G11C7/00 , G11C11/4093 , H01L25/065 , H01L25/10 , G11C5/02 , G11C5/04 , G11C5/06 , G11C7/10 , G11C7/22 , G06F13/40 , G06F13/16 , G11C11/4076 , G11C11/4091 , G11C11/4094 , G11C11/4096 , H01L25/18 , H01L23/00
Abstract: Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device. The buffer device segments and merges the data transferred between the memory controller that expects a particular memory organization and actual memory organization.
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公开(公告)号:US20210342231A1
公开(公告)日:2021-11-04
申请号:US17321053
申请日:2021-05-14
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Joseph James Tringali , Ely Tsern
Abstract: The embodiments described herein describe technologies for non-volatile memory persistence in a multi-tiered memory system including two or more memory technologies for volatile memory and non-volatile memory.
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公开(公告)号:US20210335437A1
公开(公告)日:2021-10-28
申请号:US17245491
申请日:2021-04-30
Applicant: Rambus Inc.
Inventor: Ely Tsern , Frederick A. Ware , Suresh Rajan , Thomas Vogelsang
Abstract: A method of operation in an integrated circuit (IC) memory device is disclosed. The method includes refreshing a first group of storage rows in the IC memory device at a first refresh rate. A retention time for each of the rows is tested. The testing for a given row under test includes refreshing at a second refresh rate that is slower than the first refresh rate. The testing is interruptible based on an access request for data stored in the given row under test.
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公开(公告)号:US11011248B2
公开(公告)日:2021-05-18
申请号:US16690743
申请日:2019-11-21
Applicant: Rambus Inc.
Inventor: Ely Tsern , Frederick A Ware , Suresh Rajan , Thomas Vogelsang
Abstract: A method of operation in an integrated circuit (IC) memory device is disclosed. The method includes refreshing a first group of storage rows in the IC memory device at a first refresh rate. A retention time for each of the rows is tested. The testing for a given row under test includes refreshing at a second refresh rate that is slower than the first refresh rate. The testing is interruptible based on an access request for data stored in the given row under test.
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公开(公告)号:US20190205222A1
公开(公告)日:2019-07-04
申请号:US16254920
申请日:2019-01-23
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , J. James Tringali , Ely Tsern
CPC classification number: G06F11/1471 , G06F3/0619 , G06F3/0634 , G06F3/0647 , G06F3/0685 , G06F2201/805 , G06F2201/84 , G11C7/20 , G11C14/0018
Abstract: The embodiments described herein describe technologies for non-volatile memory persistence in a multi-tiered memory system including two or more memory technologies for volatile memory and non-volatile memory.
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公开(公告)号:US09836348B2
公开(公告)日:2017-12-05
申请号:US15250677
申请日:2016-08-29
Applicant: Rambus Inc.
Inventor: Frederick A. Ware , Ely Tsern
IPC: G06F11/10 , G06F11/16 , G11C29/42 , G11C29/44 , G11C7/10 , G11C29/52 , H03M13/15 , G06F11/20 , G11C29/00
CPC classification number: G06F11/1044 , G06F11/1048 , G06F11/1068 , G06F11/1666 , G06F11/20 , G11C7/10 , G11C29/42 , G11C29/4401 , G11C29/52 , G11C29/70 , G11C29/765 , G11C2029/4402 , H03M13/1575
Abstract: A memory module is disclosed that includes a substrate, a memory device that outputs read data, and a buffer. The buffer has a primary interface for transferring the read data to a memory controller and a secondary interface coupled to the memory device to receive the read data. The buffer includes error logic to identify an error in the received read data and to identify a storage cell location in the memory device associated with the error. Repair logic maps a replacement storage element as a substitute storage element for the storage cell location associated with the error.
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公开(公告)号:US20170337984A1
公开(公告)日:2017-11-23
申请号:US15626040
申请日:2017-06-16
Applicant: Rambus Inc.
Inventor: Ely Tsern , Frederick A Ware , Suresh Rajan , Thomas Vogelsang
CPC classification number: G06F11/1008 , G11C5/04 , G11C29/24 , G11C29/50016 , G11C2029/4402 , G11C2211/4061
Abstract: A method of operation in an integrated circuit (IC) memory device is disclosed. The method includes refreshing a first group of storage rows in the IC memory device at a first refresh rate. A retention time for each of the rows is tested. The testing for a given row under test includes refreshing at a second refresh rate that is slower than the first refresh rate. The testing is interruptible based on an access request for data stored in the given row under test.
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