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    ISOLATION METHODS FOR LEAKAGE, LOSS AND NON-LINEARITY MITIGATION IN RADIO-FREQUENCY INTEGRATED CIRCUITS ON HIGH-RESISTIVITY SILICON-ON-INSULATOR SUBSTRATES
    11.
    发明申请
    ISOLATION METHODS FOR LEAKAGE, LOSS AND NON-LINEARITY MITIGATION IN RADIO-FREQUENCY INTEGRATED CIRCUITS ON HIGH-RESISTIVITY SILICON-ON-INSULATOR SUBSTRATES 审中-公开
    用于高电阻绝缘子基片的无线电频率集成电路的泄漏，损耗和非线性减小的隔离方法

    公开(公告)号：US20150228714A1

    公开(公告)日：2015-08-13

    申请号：US14620604

    申请日：2015-02-12

    申请人： RFAXIS, INC.

    发明人： OLEKSANDR GORBACHOV ,  EDWARD HYON SU HAN

    IPC分类号： H01L29/06 ,  H01L23/58 ,  H01L27/12 ,  H01L29/78

    CPC分类号： H01L27/1203 ,  H01L23/585 ,  H01L23/66 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A radio frequency integrated circuit with a silicon-on-insulator substrate includes a buried oxide layer that is disposed over a silicon substrate. The silicon-on-insulator substrate has a silicon layer that is disposed over the buried oxide layer. The integrated circuit includes a transistor disposed on the silicon layer, and a guard-ring in the silicon-on-insulator substrate that surrounds the transistor on the silicon layer. Depletion regions on the silicon substrate corresponding to areas surrounding the transistor is defined by the application of a voltage to the guard-ring. Isolation of radio frequency transmission lines on silicon-on-insulator substrates is also possible with this configuration.

    摘要翻译： 具有绝缘体上硅衬底的射频集成电路包括设置在硅衬底上的掩埋氧化物层。 绝缘体上硅衬底具有设置在掩埋氧化物层上的硅层。 集成电路包括设置在硅层上的晶体管，以及围绕硅层上的晶体管的绝缘体上硅衬底中的保护环。 通过向保护环施加电压来限定对应于晶体管周围区域的硅衬底上的消耗区域。 这种配置也可以隔离绝缘体上硅衬底上的射频传输线。

    QUASI-DIFFERENTIAL RF POWER AMPLIFIER WITH HIGH LEVEL OF HARMONICS REJECTION
    12.
    发明申请
    QUASI-DIFFERENTIAL RF POWER AMPLIFIER WITH HIGH LEVEL OF HARMONICS REJECTION 有权
    具有高水平谐波抑制的准差分射频功率放大器

    公开(公告)号：US20150130539A1

    公开(公告)日：2015-05-14

    申请号：US14539032

    申请日：2014-11-12

    申请人： RFAXIS, INC.

    发明人： OLEKSANDR GORBACHOV

    IPC分类号： H03H7/42 ,  H03F3/45 ,  H03F3/21 ,  H03H7/38 ,  H03F3/19

    CPC分类号： H03H7/42 ,  H03F1/565 ,  H03F3/19 ,  H03F3/191 ,  H03F3/195 ,  H03F3/211 ,  H03F3/245 ,  H03F2200/09 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/451

    摘要： A quasi-differential amplifier with an input port and an output port. The amplifier has a phase shifter network with a first port connected to the input port, a second port, and a third port. A first amplifier has an input connected to the second port of the phase shifter network, and an output, and a second amplifier has an input connected to the third port of the phase shifter network, and an output. A balun circuit includes a first differential port connected to an output of the first amplifier, a second differential port connected to an output of the second amplifier, and a single-ended port. An output matching network is connected to the single-ended port of the balun circuit and to the output port.

    摘要翻译： 具有输入端口和输出端口的准差分放大器。 放大器具有移相器网络，其第一端口连接到输入端口，第二端口和第三端口。 第一放大器具有连接到移相器网络的第二端口的输入端，输出端和第二放大器具有连接到移相器网络的第三端口的输入端和输出端。 平衡 - 不平衡转换电路包括连接到第一放大器的输出的第一差分端口，连接到第二放大器的输出的第二差分端口和单端口。 输出匹配网络连接到平衡 - 不平衡变换器电路的单端口和输出端口。