公开(公告)号：US20090179310A1

公开(公告)日：2009-07-16

申请号：US12007781

申请日：2008-01-15

申请人： Vance Dunton ,  S. Brad Herner ,  Paul Wai Kie Poon ,  Chuanbin Pan ,  Michael Chan ,  Michael Konevecki ,  Usha Raghuram

发明人： Vance Dunton ,  S. Brad Herner ,  Paul Wai Kie Poon ,  Chuanbin Pan ,  Michael Chan ,  Michael Konevecki ,  Usha Raghuram

IPC分类号： H01L29/868 ,  H01L21/20

CPC分类号： H01L27/1021 ,  H01L29/8613 ,  H01L29/8615 ,  H01L29/868

摘要： A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first semiconductor layer in the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the first semiconductor layer, such that first conductivity type second portions of the first semiconductor layer remain in lower portions of the plurality of openings in the insulating layer, and upper portions of the plurality of openings in the insulating layer remain unfilled. The method also includes forming a second semiconductor layer in the upper portions of the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the second semiconductor layer located over the insulating layer. The second conductivity type second portions of the second semiconductor layer remain in upper portions of the plurality of openings in the insulating layer to form a plurality of pillar shaped diodes in the plurality of openings.

摘要翻译： 制造半导体器件的方法包括提供包含多个开口的绝缘层，在绝缘层中的多个开口中并在绝缘层之上形成第一半导体层，以及去除第一半导体层的第一部分， 第一半导体层的第一导电类型的第二部分保留在绝缘层中的多个开口的下部，并且绝缘层中的多个开口的上部保持未填充。 该方法还包括在绝缘层中的多个开口的上部和绝缘层上形成第二半导体层，以及去除位于绝缘层之上的第二半导体层的第一部分。 第二半导体层的第二导电类型的第二部分保留在绝缘层中的多个开口的上部，以在多个开口中形成多个柱状二极管。

公开(公告)号：US08987119B2

公开(公告)日：2015-03-24

申请号：US13026381

申请日：2011-02-14

申请人： Vance Dunton ,  S. Brad Herner ,  Paul Wai Kie Poon ,  Chuanbin Pan ,  Michael Chan ,  Michael Konevecki ,  Usha Raghuram

发明人： Vance Dunton ,  S. Brad Herner ,  Paul Wai Kie Poon ,  Chuanbin Pan ,  Michael Chan ,  Michael Konevecki ,  Usha Raghuram

IPC分类号： H01L21/36 ,  H01L27/102 ,  H01L29/861 ,  H01L29/868

CPC分类号： H01L27/1021 ,  H01L29/8613 ,  H01L29/8615 ,  H01L29/868

摘要： A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first semiconductor layer in the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the first semiconductor layer, such that first conductivity type second portions of the first semiconductor layer remain in lower portions of the plurality of openings in the insulating layer, and upper portions of the plurality of openings in the insulating layer remain unfilled. The method also includes forming a second semiconductor layer in the upper portions of the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the second semiconductor layer located over the insulating layer. The second conductivity type second portions of the second semiconductor layer remain in upper portions of the plurality of openings in the insulating layer to form a plurality of pillar shaped diodes in the plurality of openings.

公开(公告)号：US07906392B2

公开(公告)日：2011-03-15

申请号：US12007781

申请日：2008-01-15

申请人： Vance Dunton ,  S. Brad Herner ,  Paul Wai Kie Poon ,  Chuanbin Pan ,  Michael Chan ,  Michael Konevecki ,  Usha Raghuram

发明人： Vance Dunton ,  S. Brad Herner ,  Paul Wai Kie Poon ,  Chuanbin Pan ,  Michael Chan ,  Michael Konevecki ,  Usha Raghuram

IPC分类号： H01L21/8242 ,  H01L21/8234 ,  H01L21/8222

CPC分类号： H01L27/1021 ,  H01L29/8613 ,  H01L29/8615 ,  H01L29/868

摘要： A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first semiconductor layer in the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the first semiconductor layer, such that first conductivity type second portions of the first semiconductor layer remain in lower portions of the plurality of openings in the insulating layer, and upper portions of the plurality of openings in the insulating layer remain unfilled. The method also includes forming a second semiconductor layer in the upper portions of the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the second semiconductor layer located over the insulating layer. The second conductivity type second portions of the second semiconductor layer remain in upper portions of the plurality of openings in the insulating layer to form a plurality of pillar shaped diodes in the plurality of openings.

摘要翻译： 制造半导体器件的方法包括提供包含多个开口的绝缘层，在绝缘层中的多个开口中并在绝缘层之上形成第一半导体层，以及去除第一半导体层的第一部分， 第一半导体层的第一导电类型的第二部分保留在绝缘层中的多个开口的下部，并且绝缘层中的多个开口的上部保持未填充。 该方法还包括在绝缘层中的多个开口的上部和绝缘层上形成第二半导体层，以及去除位于绝缘层之上的第二半导体层的第一部分。 第二半导体层的第二导电类型的第二部分保留在绝缘层中的多个开口的上部，以在多个开口中形成多个柱状二极管。