公开(公告)号：US20180241391A1

公开(公告)日：2018-08-23

申请号：US15413166

申请日：2017-01-23

Applicant: Raytheon Company

Inventor： Sriram Chandrasekaran ,  Michael S. Hockema

IPC: H03K17/687 ,  H03K17/567 ,  H02M3/07

CPC classification number: H03K17/6871 ,  H01L29/1608 ,  H02M3/07 ,  H03F3/2171 ,  H03K17/06 ,  H03K17/063 ,  H03K17/567 ,  H03K17/691 ,  H03K2217/0081

Abstract: A gate drive circuit for generating asymmetric drive voltages comprises a gate drive transformer comprising: a primary winding responsive to a pulse width module (PWM) input signal to generate a bipolar signal having a positive bias voltage and a negative bias voltage; and a secondary winding responsive to the bipolar signal to generate a PWM output signal. A first charge pump is connected to the secondary winding responsive to the PWM output signal to generate a level shifted PWM output signal. A second charge pump is connected to the secondary winding to generate a readjusted PWM output signal by decreasing at least a portion of the level shifted PWM output signal. A gate switching device is connected to the first charge pump and second charge pump. A level shifted PWM output signal establishes an ON condition and the readjusted PWM output signal establishes an OFF condition of the gate MOSFET.