公开(公告)号：US07301172B2

公开(公告)日：2007-11-27

申请号：US11100807

申请日：2005-04-06

申请人： Harry A. Atwater ,  Robert J. Walters

发明人： Harry A. Atwater ,  Robert J. Walters

IPC分类号： H01L27/15

CPC分类号： H01L33/16 ,  B82Y20/00 ,  H01L33/0004 ,  H01L33/0041 ,  H01L33/08 ,  Y10S977/95

摘要： A light emitting device including a transistor structure formed on a semiconductor substrate. The transistor structure having a source region, a drain region, a channel region between the source and drain regions, and a gate oxide on the channel region. The light emitting device including a plurality of nanocrystals embedded in the gate oxide, and a gate contact made of semitransparent or transparent material formed on the gate oxide. The nanocrystals are adapted to be first charged with first type charge carriers, and then provided second type charge carriers, such that the first and second type charge carriers form excitons used to emit light.

摘要翻译： 一种发光器件，包括形成在半导体衬底上的晶体管结构。 晶体管结构具有源极区，漏极区，源区和漏区之间的沟道区以及沟道区上的栅极氧化物。 该发光器件包括嵌入栅极氧化物中的多个纳米晶体，以及由栅极氧化物上形成的半透明或透明材料制成的栅极接触。 纳米晶体适于首先带有第一类型的电荷载体，然后提供第二类型的载流子，使得第一和第二类型的载流子形成用于发光的激子。