公开(公告)号：US20110121895A1

公开(公告)日：2011-05-26

申请号：US12867011

申请日：2009-02-11

申请人： Andrea Morello ,  Andrew Dzurak ,  Hans-Gregor Huebl ,  Robert Graham Clark ,  Laurens Henry Willems Van Beveren ,  Lloyd Christopher Leonard Hollenberg ,  David Normal Jamieson ,  Christopher Escott

发明人： Andrea Morello ,  Andrew Dzurak ,  Hans-Gregor Huebl ,  Robert Graham Clark ,  Laurens Henry Willems Van Beveren ,  Lloyd Christopher Leonard Hollenberg ,  David Normal Jamieson ,  Christopher Escott

IPC分类号： H03H11/24 ,  H01L29/775

CPC分类号： G01N24/10 ,  B82Y10/00 ,  G06N99/002 ,  H01L29/66984 ,  H01L29/7613

摘要： This invention concerns an electronic device for the control and readout of the electron or hole spin of a single dopant in silicon. The device comprises a silicon substrate in which there are one or more ohmic contact regions. An insulating region on top of the substrate. First and second barrier gates spaced apart to isolate a small region of charges to form an island of a Single Electron Transistor (SET). A third gate over-lying both the first and second barrier gates, but insulated from them, the third gate being able to generate a gate-induced charge layer (GICL) in the ESR line substrate beneath it. A fourth gate in close proximity to a single dopant donor gate atom, the dopant atom being encapsulated in the substrate outside the region of the GICL but close enough to allow spin-dependent charge tunnelling between the dopant atom and the SET island under the control of gate potentials, mainly the fourth gate. In use either the third or fourth gate also serve as an Electron Spin Resonance (ESR) line to control the spin of the single electron or hole of the dopant atom. In a further aspect it concerns a method for using the device.

摘要翻译： 本发明涉及用于控制和读出硅中单一掺杂剂的电子或空穴自旋的电子器件。 该器件包括其中存在一个或多个欧姆接触区域的硅衬底。 在衬底顶部的绝缘区域。 间隔开的第一和第二栅极隔离小电荷区域以形成单电子晶体管（SET）的岛。 第三栅极覆盖第一和第二栅极栅极，但与其绝缘，第三栅极能够在其下面的ESR线基板中产生栅极感应电荷层（GICL）。 靠近单个掺杂剂供体栅极原子的第四栅极，掺杂剂原子被封装在GICL的区域外部的衬底中，但足够接近以允许掺杂剂原子和SET岛之间的自旋相关电荷隧道在控制下 门电位，主要是第四门。 在使用中，第三或第四栅极还用作电子自旋共振（ESR）线以控制掺杂剂原子的单个电子或空穴的自旋。 在另一方面，其涉及使用该装置的方法。

公开(公告)号：US08507894B2

公开(公告)日：2013-08-13

申请号：US12867011

申请日：2009-02-11

申请人： Andrea Morello ,  Andrew Dzurak ,  Hans-Gregor Huebl ,  Robert Graham Clark ,  Laurens Henry Willems Van Beveren ,  Lloyd Christopher Leonard Hollenberg ,  David Normal Jamieson ,  Christopher Escott

发明人： Andrea Morello ,  Andrew Dzurak ,  Hans-Gregor Huebl ,  Robert Graham Clark ,  Laurens Henry Willems Van Beveren ,  Lloyd Christopher Leonard Hollenberg ,  David Normal Jamieson ,  Christopher Escott

IPC分类号： H01L29/06

CPC分类号： G01N24/10 ,  B82Y10/00 ,  G06N99/002 ,  H01L29/66984 ,  H01L29/7613

摘要： This invention concerns an electronic device for the control and readout of the electron or hole spin of a single dopant in silicon. The device comprises a silicon substrate in which there are one or more ohmic contact regions. An insulating region on top of the substrate. First and second barrier gates spaced apart to isolate a small region of charges to form an island of a Single Electron Transistor (SET). A third gate over-lying both the first and second barrier gates, but insulated from them, the third gate being able to generate a gate-induced charge layer (GICL) in the beneath it. A fourth gate in close proximity to a single dopant atom, the dopant atom being encapsulated in the substrate outside the region of the GICL but close enough to allow spin-dependent charge tunnelling between the dopant atom and the SET island under the control of gate potentials, mainly the fourth gate. In use either the third or fourth gate also serve as an Electron Spin Resonance (ESR) line to control the spin of the single electron or hole of the dopant atom. In a further aspect it concerns a method for using the device.

摘要翻译： 本发明涉及用于控制和读出硅中单一掺杂剂的电子或空穴自旋的电子器件。 该器件包括其中存在一个或多个欧姆接触区域的硅衬底。 在衬底顶部的绝缘区域。 间隔开的第一和第二栅极隔离小电荷区域以形成单电子晶体管（SET）的岛。 第三栅极覆盖第一和第二栅极栅极，但与其绝缘，第三栅极能够在其下方产生栅极感应电荷层（GICL）。 靠近单一掺杂剂原子的第四栅极，掺杂剂原子被封装在GICL区域外部的衬底中，但足够接近以允许在栅极电位控制下的掺杂剂原子和SET岛之间的自旋相关电荷隧穿 ，主要是第四门。 在使用中，第三或第四栅极还用作电子自旋共振（ESR）线以控制掺杂剂原子的单个电子或空穴的自旋。 在另一方面，其涉及使用该装置的方法。

公开(公告)号：US07097708B2

公开(公告)日：2006-08-29

申请号：US10484759

申请日：2002-08-20

申请人： Robert Graham Clark ,  Neil Jonathan Curson ,  Toby Hallam ,  Lars Oberbeck ,  Steven Richard Schofield ,  Michelle Yvonne Simmons

发明人： Robert Graham Clark ,  Neil Jonathan Curson ,  Toby Hallam ,  Lars Oberbeck ,  Steven Richard Schofield ,  Michelle Yvonne Simmons

IPC分类号： C30B25/12

CPC分类号： G06N99/002 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/18

摘要： This invention concerns nanoscale products, such as electronic devices fabricated to nanometer accuracy. It also concerns atomic scale products. These products may have an array of electrically active dopant atoms in a silicon surface, or an encapsulated layer of electrically active donor atoms. In a further aspect the invention concerns a method of fabricating such products. The methods include forming a preselected array of donor atoms incorporated into silicon. Encapsulation by growing silicon over a doped surface, after desorbing the passivating hydrogen. Also, using an STM to view donor atoms on the silicon surface during fabrication of a nanoscale device, and measuring the electrical activity of the donor atoms during fabrication of a nanoscale device. Such products and processes are useful in the fabrication of a quantum computer, but could have many other uses.

摘要翻译： 本发明涉及纳米级产品，例如以纳米精度制造的电子器件。 它也涉及原子级产品。 这些产品可以在硅表面或电活性供体原子的封装层中具有阵列的电活性掺杂剂原子。 在另一方面，本发明涉及一种制造这种产品的方法。 所述方法包括形成掺入硅中的供体原子的预选阵列。 在解吸钝化氢后，通过在掺杂表面上生长硅来封装。 此外，在制造纳米级器件期间使用STM来观察硅表面上的供体原子，并且在制造纳米尺度器件期间测量施主原子的电活性。 这样的产品和方法在量子计算机的制造中是有用的，但是可以具有许多其它用途。