公开(公告)号：US20120229805A1

公开(公告)日：2012-09-13

申请号：US13407943

申请日：2012-02-29

Applicant: Ryosuke WATANABE ,  Masashi TSUBUKU ,  Takayuki INOUE

Inventor： Ryosuke WATANABE ,  Masashi TSUBUKU ,  Takayuki INOUE

IPC: G01J3/457 ,  G01J1/42

CPC classification number: H01L22/14 ,  H01L22/12

Abstract: Even in the case of a sample exhibiting low photoresponse, such as a wide bandgap semiconductor, a measurement method which enables highly accurate CPM measurement is provided. When CPM measurement is performed, photoexcited carriers which are generated by light irradiation of a sample exhibiting low photoresponse such as a wide bandgap semiconductor are instantly removed by application of positive bias voltage to a third electrode which is provided in the sample in addition to two electrodes used for measurement. When the photoexcited carriers are removed, even in the case of the sample exhibiting low photoresponse, the controllability of a photocurrent value is improved and CPM measurement can be performed accurately.

Abstract translation: 即使在具有低光响应的样品（例如宽带隙半导体）的情况下，也提供了能够进行高度精确的CPM测量的测量方法。 当进行CPM测量时，通过向除了两个电极之外的样品中提供的第三电极施加正偏置电压，立即除去通过光照射出具有低光响应的样品（例如宽带隙半导体）产生的光激发载流子 用于测量。 当除去光激发载体时，即使在样品表现出较低的光响应的情况下，光电流值的可控性得到改善，也可以精确地进行CPM测量。