公开(公告)号：US08951894B2

公开(公告)日：2015-02-10

申请号：US13618472

申请日：2012-09-14

Applicant: Shunpei Yamazaki ,  Takayuki Inoue ,  Erumu Kikuchi ,  Hiroto Inoue

Inventor： Shunpei Yamazaki ,  Takayuki Inoue ,  Erumu Kikuchi ,  Hiroto Inoue

IPC: H01L21/314 ,  H01J37/32 ,  H01L29/66

CPC classification number: H01J37/32449 ,  H01J37/3244 ,  H01J37/32541 ,  H01L29/66765

Abstract: A structure of the plasma treatment apparatus is employed in which an upper electrode has projected portions provided with first introduction holes and recessed portions provided with second introduction holes, the first introduction hole of the upper electrode is connected to a first cylinder filled with a gas which is not likely to be dissociated, the second introduction hole is connected to a second cylinder filled with a gas which is likely to be dissociated, the gas which is not likely to be dissociated is introduced into a reaction chamber from an introduction port of the first introduction hole provided on a surface of the projected portion of the upper electrode, and the gas which is likely to be dissociated is introduced into the reaction chamber from an introduction port of the second introduction hole provided on a surface of the recessed portion.

Abstract translation: 采用等离子体处理装置的结构，其中上电极具有设置有第一导入孔的突出部分和设置有第二导入孔的凹部，上电极的第一导入孔与填充有气体的第一圆筒连接， 不可能解离，第二引入孔连接到填充有可能解离的气体的第二气缸，不可能解离的气体从第一引入孔的引入口引入反应室 设置在上部电极的突出部分的表面上的引入孔和可能被解离的气体从设置在凹部的表面上的第二引入孔的引入口引入到反应室中。

公开(公告)号：US08901552B2

公开(公告)日：2014-12-02

申请号：US13226713

申请日：2011-09-07

Applicant: Shunpei Yamazaki ,  Yusuke Nonaka ,  Takayuki Inoue ,  Masashi Tsubuku ,  Kengo Akimoto ,  Akiharu Miyanaga

Inventor： Shunpei Yamazaki ,  Yusuke Nonaka ,  Takayuki Inoue ,  Masashi Tsubuku ,  Kengo Akimoto ,  Akiharu Miyanaga

IPC: H01L29/12 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L27/01 ,  H01L27/12 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/04 ,  H01L29/24 ,  H01L29/78603

Abstract: An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

Abstract translation: 本发明的目的是提供一种具有稳定的电气特性和高可靠性的氧化物半导体膜的半导体装置。 通过在绝缘表面上形成厚度为1nm至10nm的第一材料膜（具有六方晶体结构的膜）形成第一和第二材料膜的叠层，并形成具有六方晶系结构的第二材料膜（ 使用第一材料膜作为核的结晶氧化物半导体膜）。 作为第一材料膜，具有纤锌矿晶体结构的材料膜（例如氮化镓或氮化铝）或具有刚玉晶体结构的材料膜（α-Al 2 O 3，α-Ga 2 O 3，In 2 O 3，Ti 2 O 3，V 2 O 3，Cr 2 O 3，或 α-Fe 2 O 3）。

公开(公告)号：US08530030B2

公开(公告)日：2013-09-10

申请号：US13432322

申请日：2012-03-28

Applicant: Yasushi Noguchi ,  Atsushi Kaneda ,  Takayuki Inoue

Inventor： Yasushi Noguchi ,  Atsushi Kaneda ,  Takayuki Inoue

IPC: F01N3/10 ,  F01N3/24 ,  B01D53/94

CPC classification number: F01N3/28 ,  B01D46/2425 ,  B01D46/2451 ,  B01D46/247 ,  B01D46/2474 ,  B01D53/88 ,  B01D2046/2433 ,  B01D2046/2437 ,  B01D2258/01 ,  C04B35/565 ,  C04B35/6316 ,  C04B38/0009 ,  C04B41/009 ,  C04B41/5096 ,  C04B41/85 ,  C04B2111/0081 ,  C04B2235/3213 ,  C04B2235/428 ,  C04B2235/5436 ,  C04B2235/663 ,  C04B2235/96 ,  F01N3/0222 ,  Y02T10/20 ,  Y10T428/24149 ,  Y10T428/24165 ,  C04B38/0067 ,  C04B41/5059 ,  C04B38/0006 ,  C04B35/573

Abstract: There is disclosed a honeycomb structure including a honeycomb structure section including: porous partition walls to divide and form a plurality of cells which extend from one end surface to the other end surface and become through channels of a fluid; and an outer peripheral wall positioned in an outermost periphery. The partition walls and the outer peripheral wall contain silicon carbide particles as an aggregate, and silicon as a binder to bind the silicon carbide particles, thicknesses of the partition walls are from 50 to 200 μm, a cell density is from 50 to 150 cells/cm2, an average particle diameter of silicon carbide as the aggregate is from 3 to 40 μm, and a volume resistivity at 400° C. is from 1 to 40 Ωcm.

Abstract translation: 公开了一种蜂窝结构体，其包括蜂窝结构部分，该蜂窝结构部分包括：多孔分隔壁，用于分隔并形成从一个端面延伸到另一端面的多个单元，并且通过流体通道; 以及位于最外周的外周壁。 分隔壁和外周壁包含作为骨料的碳化硅颗粒和作为粘结剂的硅作为结合碳化硅颗粒的分隔壁，隔壁的厚度为50至200μm，电池密度为50至150个/ cm 2，作为骨料的碳化硅的平均粒径为3〜40μm，400℃下的体积电阻率为1〜40Ω·cm。

公开(公告)号：US08441047B2

公开(公告)日：2013-05-14

申请号：US12754393

申请日：2010-04-05

Applicant: Hiromichi Godo ,  Takayuki Inoue

Inventor： Hiromichi Godo ,  Takayuki Inoue

IPC: H01L29/80 ,  H01L31/112

CPC classification number: H01L29/7869 ,  H01L27/1225

Abstract: An object is to provide an n-channel transistor and a p-channel transistor having a preferred structure using an oxide semiconductor. A first source or drain electrode which is electrically connected to a first oxide semiconductor layer and is formed using a stacked-layer structure including a first conductive layer containing a first material and a second conductive layer containing a second material, and a second source or drain electrode which is electrically connected to a second oxide semiconductor layer and is formed using a stacked-layer structure including a third conductive layer containing the first material and a fourth conductive layer containing the second material are included. The first oxide semiconductor layer is in contact with the first conductive layer of the first source or drain electrode, and the second oxide semiconductor layer is in contact with the third and the fourth conductive layers of the second source or drain electrode.

Abstract translation: 目的是提供使用氧化物半导体的具有优选结构的n沟道晶体管和p沟道晶体管。 第一源极或漏极，其电连接到第一氧化物半导体层，并且使用包括包含第一材料的第一导电层和包含第二材料的第二导电层的堆叠层结构形成，以及第二源极或漏极 电连接到第二氧化物半导体层并且使用包括包含第一材料的第三导电层和包含第二材料的第四导电层的层叠结构形成的电极。 第一氧化物半导体层与第一源极或漏极的第一导电层接触，并且第二氧化物半导体层与第二源极或漏极的第三导电层和第四导电层接触。

公开(公告)号：US08422127B2

公开(公告)日：2013-04-16

申请号：US11886255

申请日：2006-03-17

Applicant: Shigeru Uchiyama ,  Takayuki Inoue ,  Masatoshi Okugawa

Inventor： Shigeru Uchiyama ,  Takayuki Inoue ,  Masatoshi Okugawa

IPC: G02B21/00

CPC classification number: G02B21/241 ,  G02B21/26 ,  G02B21/365

Abstract: The present invention relates to a microscopic image capturing apparatus having a structure that, in scanning an imageable area of an imaging unit in a predetermined direction in an imaging object area, in which a sample is present, can reliably set a focal point of the imaging unit on each imaging position set inside the imaging object area regardless of the type of focusing actuator. The microscopic image capturing apparatus has a sample setting stage having a sample setting surface that is inclined with respect to a scan plane orthogonal to an optical axis of an objective lens. By moving the sample setting stage along the scan plane such that the distance in the optical axis direction between the imaging unit and the sample setting surface varies monotonously, the focal point position of the imaging unit is adjusted in only one direction along the optical axis of the objective lens.

Abstract translation: 本发明涉及一种显微图像拍摄装置，其特征在于，在成像对象区域内，在成像对象区域内，在成像单元的预定方向的可成像区域中进行扫描时，能够可靠地设定成像的焦点 在成像对象区域内设置的每个成像位置上的单位，而与聚焦致动器的类型无关。 微观图像拍摄装置具有样品设定台，该样品设定台具有相对于与物镜的光轴正交的扫描面倾斜的样品设定面。 通过沿着扫描平面移动样品设定台，使得成像单元和样品设定面之间的光轴方向上的距离单调变化，则成像单元的焦点位置仅在沿着 物镜。

公开(公告)号：US20130009432A1

公开(公告)日：2013-01-10

申请号：US13637103

申请日：2011-03-31

Applicant: Takayuki Inoue

Inventor： Takayuki Inoue

IPC: B60N2/42 ,  B60N2/22

CPC classification number: B60N2/2356 ,  B60N2/4228 ,  B60N2/433 ,  B60N2205/50

Abstract: In a double-lock reclining seat, there is provided a mechanism for preventing two reclining lock mechanisms from being unlocked due to a collision load applied from a baggage or the like, without deforming the reclining lock mechanisms themselves, for example, without bending a connecting shaft of the two reclining lock mechanisms, or without adding any complicated mechanism changes to the interior of the reclining lock mechanisms. The double-lock reclining seat includes a load receiver 10 is fixed onto the connection shaft 5 of the two reclining lock mechanisms so as to extend obliquely downward from the rear side thereof, so that, as the load is applied to the back portion of the seat back from the baggage or the like, the load receiver 10 holds the connecting shaft 5 in a direction in which the two reclining lock mechanisms are locked.

Abstract translation: 在双锁躺椅中，提供了一种用于防止两个倾斜锁定机构由于从行李等施加的碰撞负载而被解锁的机构，而不会使倾斜锁定机构本身变形，例如，不会弯曲连接 两个倾斜锁定机构的轴，或者不会对倾斜锁定机构的内部增加任何复杂的机构变化。 双锁定倾斜座椅包括固定在两个倾斜锁定机构的连接轴5上的负载接收器10，以便从其后侧向下倾斜延伸，使得当负载施加到 从行李等座椅靠背，负载接收器10将连接轴5保持在两个倾斜锁定机构被锁定的方向上。

公开(公告)号：US08330887B2

公开(公告)日：2012-12-11

申请号：US12219020

申请日：2008-07-15

Applicant: Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Takeshi Osada ,  Takayuki Inoue

Inventor： Yoshiyuki Kurokawa ,  Takayuki Ikeda ,  Takeshi Osada ,  Takayuki Inoue

IPC: G02F1/136

CPC classification number: G02F1/1368 ,  G02F1/133707 ,  G02F2201/40 ,  H01L27/1222 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

Abstract: It is an object to provide a liquid crystal display device and an electronic device of which aperture ratio increases. The present invention includes a substrate having an insulating surface, a transistor formed over the substrate, a pixel electrode electrically connected to the transistor. The transistor includes a gate electrode, a gate insulating layer over the gate electrode, a semiconductor layer having a microcrystalline structure over the gate insulating layer, and a buffer layer over the semiconductor layer having the microcrystalline structure. The channel width W of the transistor and the channel length L of the transistor satisfy a relation of 0.1≦W/L≦1.7.

Abstract translation: 本发明的目的是提供一种开口率增加的液晶显示装置和电子装置。 本发明包括具有绝缘表面的衬底，形成在衬底上的晶体管，电连接到晶体管的像素电极。 晶体管包括栅电极，栅电极上的栅极绝缘层，在栅极绝缘层上具有微晶结构的半导体层，以及在具有微晶结构的半导体层上的缓冲层。 晶体管的沟道宽度W和晶体管的沟道长度L满足关系式为0.1＆nlE; W / L＆nlE; 1.7。

公开(公告)号：US08305191B2

公开(公告)日：2012-11-06

申请号：US11802246

申请日：2007-05-21

Applicant: Hiroki Dembo ,  Yoshiyuki Kurokawa ,  Takayuki Inoue

Inventor： Hiroki Dembo ,  Yoshiyuki Kurokawa ,  Takayuki Inoue

IPC: H04Q5/22

CPC classification number: H01Q9/27 ,  G01S13/878 ,  G06K2017/0045 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/1266 ,  H01L27/13 ,  H01Q1/40 ,  H01Q7/00

Abstract: A position detection system is formed by network connection of a plurality of interrogators and a server. An RFID and the interrogators communicate wirelessly, whereby a distance from each interrogator to the RFID is searched to search a position of the RFID from the distance. In order to calculate the distance from the interrogator to the RFID, a signal is oscillated with a frequency corresponding to amplitude of a signal received in the RFID from the interrogator. A frequency of a signal oscillated in the RFID is detected in the RFID or by the interrogator, whereby a distance from the interrogator to the RFID is detected.

Abstract translation: 通过多个询问器和服务器的网络连接形成位置检测系统。 RFID和询问器以无线方式进行通信，从而搜索从每个询问器到RFID的距离，以从远处搜索RFID的位置。 为了计算从询问器到RFID的距离，信号以对应于来自询问器的RFID中接收的信号的幅度的频率振荡。 在RFID中或由询问器检测到在RFID中振荡的信号的频率，从而检测到从询问器到RFID的距离。

公开(公告)号：US08258025B2

公开(公告)日：2012-09-04

申请号：US12848594

申请日：2010-08-02

Applicant: Shunpei Yamazaki ,  Yukie Suzuki ,  Yasuyuki Arai ,  Takayuki Inoue ,  Erumu Kikuchi

Inventor： Shunpei Yamazaki ,  Yukie Suzuki ,  Yasuyuki Arai ,  Takayuki Inoue ,  Erumu Kikuchi

IPC: H01L21/00 ,  H01L21/20 ,  H01L21/36

CPC classification number: H01L21/02595 ,  C23C16/24 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

Abstract: A microcrystalline semiconductor film with high crystallinity is manufactured. In addition, a thin film transistor with excellent electric characteristics and high reliability, and a display device including the thin film transistor are manufactured with high productivity. A deposition gas containing silicon or germanium is introduced from an electrode including a plurality of projecting portions provided in a treatment chamber of a plasma CVD apparatus, glow discharge is caused by supplying high-frequency power, and thereby crystal particles are formed over a substrate, and a microcrystalline semiconductor film is formed over the crystal particles by a plasma CVD method.

Abstract translation: 制造具有高结晶度的微晶半导体膜。 此外，以高生产率制造具有优异的电特性和高可靠性的薄膜晶体管，以及包括薄膜晶体管的显示装置。 从设置在等离子体CVD装置的处理室中的多个突出部的电极引入含有硅或锗的沉积气体，通过供给高频电力而产生辉光放电，由此在基板上形成晶体粒子， 并且通过等离子体CVD法在晶体颗粒上形成微晶半导体膜。

公开(公告)号：US20120134508A1

公开(公告)日：2012-05-31

申请号：US13303783

申请日：2011-11-23

Applicant: Takayuki Inoue ,  Hiroshi Saruwatari ,  Kazunobu Kondo

Inventor： Takayuki Inoue ,  Hiroshi Saruwatari ,  Kazunobu Kondo

IPC: H04B15/00

CPC classification number: G10L21/0208 ,  G10L2021/02085 ,  G10L2021/02163

Abstract: An audio processing apparatus generates a suppression coefficient sequence that is composed of coefficient values corresponding to frequency components of an audio signal, the frequency components being multiplied by the corresponding coefficient values to suppress noise components of the audio signal. In the audio processing apparatus, a characteristic value calculation unit calculates a noise characteristic value depending on a shape of a magnitude distribution of the audio signal. An intensity setting unit variably sets a suppression intensity of the noise components based on the noise characteristic value. A coefficient sequence generation unit generates the suppression coefficient sequence based on the audio signal and the suppression intensity.

Abstract translation: 音频处理装置生成由与音频信号的频率分量对应的系数值构成的抑制系数序列，频率分量乘以相应的系数值，以抑制音频信号的噪声分量。 在音频处理装置中，特征值计算单元根据音频信号的幅度分布的形状来计算噪声特性值。 强度设定单元根据噪声特性值可变地设定噪声成分的抑制强度。 系数序列生成单元基于音频信号和抑制强度生成抑制系数序列。