Abstract:
A transparent substrate is provided, on a main face, with a stack of thin layers including at least one metallic functional layer having properties of reflection in the infrared region and/or in the solar radiation region, based on silver or on silver-containing metal alloy, and two antireflective coating. The antireflective coatings each include at least one dielectric layer. The functional layer is positioned between the two antireflective coatings. Additionally, at least one nickel oxide NixO layer is located on and in contact with the functional layer starting with the substrate. A physical thickness of the nickel oxide NixO layer is at least 0.3 nm.
Abstract:
A transparent substrate provided on one of its main surfaces with a stack of thin layers, the stack of layers including the following layers starting from the substrate: a first dielectric module of one or more thin layers; a tungsten oxide absorbing layer; a second dielectric module of one or more thin layers; wherein the tungsten oxide includes at least one doping element selected from chemical elements of group 1 according to IUPAC nomenclature.
Abstract:
An electrically conducting support for an electrochromic device and its manufacture; the electrically conducting support including, in this order: a substrate, an optional underlayer, a first inorganic layer on the optional underlayer or on the substrate, partially or completely structured in thickness with traversing holes or cavities, an electrode, made of metal grid with strands which exhibit, along their length, a rough central region between less rough lateral regions which are flush with the top surface, an electrically conducting coating made of inorganic material.
Abstract:
An electrically conductive OLED carrier includes a glazing substrate; an electrode arranged in a metal grid made up of strands; an insulating light extraction layer under the metal grid; and a layer partially structured in its thickness, this layer being of given composition and of refractive index n3 of 1.7 to 2.3, and being located on the light extraction layer, which partially structured layer is formed from a region structured with cavities containing the metal grid, and from another region, called the low region, located on the light extraction layer, the separation H between that surface of the structured region called the high surface, and that surface of the metal grid called the upper surface, and therefore that furthest from the substrate, is larger than 100 nm. The strands have along their length a central zone between lateral zones that are flush with the high surface.
Abstract:
An electrically conductive OLED carrier including in this order: a glazing substrate; an electrode arranged in a metal grid made up of strands; an electrically insulating light extraction layer under the metal grid; and a layer partially structured in its thickness, this layer of refractive index n3 of 1.7 to 2.3, and being located on the light extraction layer, which partially structured layer is formed: from a region structured with cavities at least partially containing the metal grid; and from another region, called the low region, located on the light extraction layer, the separation H between the surface of the structured region called the high surface, and therefore that furthest from the substrate, and the surface of the metal grid called the upper surface, and therefore that furthest from the substrate, being, in absolute value, smaller than or equal to 100 nm.
Abstract:
A conductive support for an OLED, includes a dielectric sublayer, with an optical thickness L1 of greater than 20 nm and less than 180 nm, including a first crystalline contact layer based on zinc oxide, a first silver layer of less than 20 nm, a dielectric separating layer, with an optical thickness L2 of greater than 80 nm and less than 280 nm, including in this order a layer of zinc oxide with a thickness e2, directly on the first silver layer, an optional amorphous layer, based on tin zinc or indium zinc or indium zinc tin oxide with a thickness ei of less than 15 nm, a second layer of zinc oxide, with a thickness ec2, the sum of ec2+e2 being at least 30 nm, a second silver layer of less than 20 nm, a metal overblocker of less than 3 nm, a dielectric electrically conductive overlayer.