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公开(公告)号：US20190237690A1
公开(公告)日：2019-08-01
申请号：US16379796
申请日：2019-04-10
发明人： Yong-hwan PARK , Seongjun Lee , Jongseok Kim , Eunae Jung , Changyong Jung
CPC分类号： H01L51/0533 , G02F1/136286 , G06F3/0412 , G06F3/0416 , G06F3/044 , G06F2203/04102 , G06F2203/04103 , G06F2203/04111 , H01L27/323 , H01L27/3262 , H01L51/0023 , H01L51/107 , H01L51/5253 , H01L2251/5338
摘要： A display device including a base member, a circuit layer, a display layer, a thin film encapsulation layer, and a touch sensor layer. The base member includes a first area and a second area disposed adjacent to the first area. The circuit layer is disposed on the base member to cover the first area and to expose the second area. The display layer is disposed on the circuit layer to display an image. The thin film encapsulation layer is disposed on the display layer. The touch sensor layer is disposed on the thin film encapsulation layer and includes an organic layer extending from an upper portion of the thin film encapsulation layer to cover at least a portion of the exposed second area.
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公开(公告)号：US20190131529A1
公开(公告)日：2019-05-02
申请号：US15744818
申请日：2017-11-20
发明人： Lei XING
CPC分类号： H01L51/0017 , H01L21/0273 , H01L21/47 , H01L27/3246 , H01L51/0008 , H01L51/0023 , H01L51/5206 , H01L51/5212 , H01L51/56 , H01L2251/308 , H01L2251/554 , H01L2251/558
摘要： A manufacturing method of an OLED anode and display device are provided, which the former method comprises the steps: forming an anode-film layer, a material is an ITO, on a substrate; forming a photoresist-film layer on the anode-film layer; patterning the photoresist-film layer to acquire a photoresist-mask pattern, which comprises: an area of photoresist full-retention, photoresist half-retention, and a photoresist full-removal, wherein the photoresist area of half-retention is located between the full-retention and the full-removal; etching the anode film layer to acquire an anode pattern; removing the photoresist half-retention area; perform a plasma treatment to a portion of the anode pattern outside the photoresist full-retention area by adopting a first gas, comprising at least one of O2, N2O, CF4, Ar; removing the photoresist-mask pattern. The disclosure increases the small thickness portion of brightness to compensate for the display unevenness caused by the thickness difference and improve the display quality.
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公开(公告)号：US20180374907A1
公开(公告)日：2018-12-27
申请号：US16118448
申请日：2018-08-31
发明人： Sangkyu CHOI , Sungkyun PARK , Jungha SON , Jae-Wook KANG
CPC分类号： H01L27/323 , G06F3/0412 , G06F3/044 , G06F2203/04102 , G06F2203/04103 , G06F2203/04111 , H01L27/3258 , H01L51/0023 , H01L51/5237 , H01L51/56 , H01L2251/5338
摘要： A display apparatus including a substrate, a display portion disposed on an active area defined at the substrate, a buffer layer disposed on the active area and a pad area defined at the substrate, a touch sensing portion disposed on the buffer layer, and a pad portion disposed between the pad area and the buffer layer. The touch sensing portion includes a first pad pattern, a middle layer disposed on the first pad pattern, and a second pad pattern disposed on the middle layer. The first pad pattern is connected to the pad portion through a first contact hole defined on the pad portion in the buffer layer. The second pad pattern is connected to the first pad pattern through a second contact hole defined on the first contact hole in the middle layer.
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公开(公告)号：US20180358568A1
公开(公告)日：2018-12-13
申请号：US15780949
申请日：2016-12-01
申请人： Xinning Luan , Jiang Liu , Huaping Li
发明人： Xinning Luan , Jiang Liu , Huaping Li
CPC分类号： H01L51/057 , G09F9/30 , G09F9/33 , H01L27/3244 , H01L51/0023 , H01L51/055 , H01L51/102 , H01L51/5225 , H01L51/5296
摘要： Gated organic light-emitting diodes or vertical light emitting transistors are disclosed based on the modulation of charge carrier injection from electrodes into light-emitting materials by applying external gate potential. This gate modulation were achieved in two disclosed methods: 1) a porous electrode allowing mobile ions to stabilize electrochemically doped semiconducting materials that can form ohmic contact with electrodes: 2) an electrode with gate-tunable work function such as Al:LiF composite electrodes.
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5.发明申请公开(公告)号：US20180337358A1
公开(公告)日：2018-11-22
申请号：US15576836
申请日：2017-06-22
发明人： Huafei XIE
IPC分类号： H01L51/05 , H01L51/00 , H01L51/50 , H01L27/28 , H01L27/32 , G02F1/1368 , G02F1/1335
CPC分类号： H01L51/0566 , G02F1/133514 , G02F1/1368 , G02F2202/36 , H01L27/283 , H01L27/322 , H01L27/3227 , H01L27/3274 , H01L51/0007 , H01L51/001 , H01L51/0018 , H01L51/0023 , H01L51/0028 , H01L51/003 , H01L51/0048 , H01L51/0541 , H01L51/502 , H01L51/5056 , H01L51/5072 , H01L51/5088 , H01L51/5096 , H01L2251/301 , H01L2251/558
摘要： The present application provides a method for fabricating a thin film transistor, a method for fabricating an array substrate, and a display apparatus. A method for fabricating a thin film transistor including: providing a substrate; covering an isolating layer on the substrate; coating an active layer precursor solution on the isolation layer; forming an active layer thin film by the active layer precursor solution; dividing the active layer thin film into a small module active layer, the mobility of the active layer of the thin film transistor is increased, and to drive the quantum dot light emitting device of the array substrate through the thin film transistor with high mobility to improve the display luminescence performance of the display apparatus.
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公开(公告)号：US20180287100A1
公开(公告)日：2018-10-04
申请号：US15764673
申请日：2016-09-26
CPC分类号： H01L51/56 , H01L51/0023 , H01L51/5209 , H01L51/5225 , H01L51/524 , H01L51/5253 , H01L2251/5392 , H01L2251/568 , H05B33/02 , H05B33/04 , H05B33/10 , H05B33/12 , H05B33/28
摘要： A method of manufacturing an organic EL element (1) includes: a step of forming a first electrode layer (5), an organic functional layer (7), and a second electrode layer (9) on a substrate (3), a step of detecting a defective portion after forming the second electrode layer (9), a step of removing the second electrode layer (9) in the defective portion by irradiating the defective portion with a laser beam (L) from the second electrode layer (9) side when the defective portion has been detected, and a step of forming a sealing layer (11) after removing the second electrode layer 9 in the defective portion.
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公开(公告)号：US10074823B2
公开(公告)日：2018-09-11
申请号：US15310706
申请日：2015-05-04
申请人： LG Display Co., Ltd.
发明人： Minsoo Kang , Young Kyun Moon , Jin Bok Lee , Byung Woo Yoo
CPC分类号： H01L51/5212 , H01L23/60 , H01L51/0023 , H01L51/5209 , H01L51/5225 , H01L51/5228 , H01L51/56 , H01L2251/5338 , H01L2251/5361
摘要： The present specification is drawn to an organic light emitting device and a method of manufacturing the same. The organic light emitting device includes a short circuit preventing layer provided on a substrate; a first electrode provided on the short circuit preventing layer, and including two or more conductive units provided to be separated from each other; a second electrode provided opposite to the first electrode; one or more organic material layers provided between the first electrode and the second electrode; and an auxiliary electrode. The short circuit preventing layer electrically connects the auxiliary electrode and the first electrode to control the quantity of leakage current even when a short-circuit defect occurs in the conductive unit.
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公开(公告)号：US20180248135A1
公开(公告)日：2018-08-30
申请号：US15968258
申请日：2018-05-01
发明人： Zhibin Yu , Sri Ganesh Rohit Bade , Xin Shan , Junqiang Li
CPC分类号： H01L51/0077 , H01L51/0004 , H01L51/0022 , H01L51/0023 , H01L51/5012 , H01L51/5221
摘要： Printed poly(ethylene oxide) (PEO) organometallic halide Perovskite (Pero) optoelectronic devices, including light emitting diodes (LEDs) fabricated on both rigid indium tin oxide (ITO)/glass and flexible carbon nanotube (CNTs)/polymer substrates using a composite thin film of PEO and Br-Pero as the light-emitting layer. Method of manufacturing Printed poly(ethylene oxide) (PEO) organometallic halide Perovskite (Pero) optoelectronic devices performed in an environment at a temperature of about 25° C. and a relative humidity between about 70% and 80%.
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公开(公告)号：US20180226507A1
公开(公告)日：2018-08-09
申请号：US15505108
申请日：2016-12-29
发明人： Zhe Chen
IPC分类号： H01L29/786 , H01L29/66 , H01L27/12 , H01L27/32
CPC分类号： H01L29/7869 , H01L27/1214 , H01L27/3244 , H01L29/0657 , H01L29/66742 , H01L29/66757 , H01L29/78618 , H01L29/78624 , H01L29/78627 , H01L51/0018 , H01L51/0023 , H01L51/0508 , H01L51/0512 , H01L51/0558 , H01L51/105
摘要： The present invention provides a thin-film transistor and a manufacturing method thereof. The manufacturing method of the thin-film transistor according to the present invention is such that by forming a first photoresist layer on an active layer and using a mask associated with the active layer to pattern the first photoresist layer so as to form the first photoresist pattern, the first photoresist pattern so formed provides protection of the active layer against corrosion caused by acidic etchant solution in the subsequently conducted etching operation of source and drain electrodes so as to function as an etching stopper layer and further, a major portion of the first photoresist pattern can be removed in a photolithographic process of the source and drain electrodes so that only a minor portion is left in the finally-formed thin-film transistor and does not affect the properties of the thin-film transistor. The thin-film transistor according to the present invention has a simple manufacturing process and a low manufacturing cost and the surface of the active layer is flat and smooth. The thin-film transistor shows excellent properties.
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公开(公告)号：US20180187036A1
公开(公告)日：2018-07-05
申请号：US15740550
申请日：2016-06-30
发明人： Ta-Ya Chu , Christophe Py , Ye Tao , Zhiyi Zhang , Afshin Dadvand
IPC分类号： C09D11/52 , H01L29/772 , H01L51/00 , H01L51/05 , H01L51/10
CPC分类号： C09D11/52 , H01L29/772 , H01L51/0022 , H01L51/0023 , H01L51/0508 , H01L51/105 , H05K1/16
摘要： Disclosed is a method of printing ultranarrow-gap lines of a functional material, such as an electrically conductive silver ink. The method entails providing a substrate having an interlayer coated on the substrate and printing the ultranarrow-gap lines by depositing ink on the interlayer of the substrate, the ink comprising the functional material and a solvent that swells the interlayer to cause the interlayer to bulge at edges of the ink to thereby define embankments that confine the ink.
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